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    VP2106 Search Results

    VP2106 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CDCLVP2106RHAR Texas Instruments Low Jitter, Dual 1:6 Universal-to-LVPECL Buffer 40-VQFN -40 to 85 Visit Texas Instruments Buy
    CDCLVP2106RHAT Texas Instruments Low Jitter, Dual 1:6 Universal-to-LVPECL Buffer 40-VQFN -40 to 85 Visit Texas Instruments Buy
    8SLVP2106ANLGI Renesas Electronics Corporation Dual 1:6, 3.3V, 2.5V LVPECL Output Fanout Buffer Visit Renesas Electronics Corporation
    8SLVP2106ANLGI/W Renesas Electronics Corporation Dual 1:6, 3.3V, 2.5V LVPECL Output Fanout Buffer Visit Renesas Electronics Corporation
    8SLVP2106ANLGI8 Renesas Electronics Corporation Dual 1:6, 3.3V, 2.5V LVPECL Output Fanout Buffer Visit Renesas Electronics Corporation
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    VP2106 Price and Stock

    Diodes Incorporated ZVP2106GTA

    MOSFET P-CH 60V 450MA SOT223
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    DigiKey ZVP2106GTA Reel 31,000 1,000
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    ZVP2106GTA Cut Tape 1,146 1
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    TME ZVP2106GTA 1,575 1
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    New Advantage Corporation ZVP2106GTA 77,000 1
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    Rochester Electronics LLC CDCLVP2106RHAT

    IC CLK BUFFER 1:12 2GHZ 40VQFN
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    DigiKey CDCLVP2106RHAT Bulk 6,315 29
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    Diodes Incorporated ZVP2106ASTZ

    MOSFET P-CH 60V 280MA E-LINE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ZVP2106ASTZ Ammo Pack 2,000 2,000
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    ZVP2106ASTZ Cut Tape 1,865 1
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    Avnet Americas ZVP2106ASTZ Reel 40 Weeks 2,000
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    Mouser Electronics ZVP2106ASTZ 8,542
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    Renesas Electronics Corporation 8SLVP2106ANLGI

    IC CLK BUFFER 1:6 2GHZ 16VFQFN
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    DigiKey 8SLVP2106ANLGI Tray 490 1
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    Avnet Americas 8SLVP2106ANLGI Tray 26 Weeks, 1 Days 490
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    Mouser Electronics 8SLVP2106ANLGI
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    Renesas Electronics America 8SLVP2106ANLGI Tray 490 1
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    Microchip Technology Inc VP2106N3-G

    MOSFET P-CH 60V 250MA TO92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VP2106N3-G Bag 291 1
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    Avnet Americas VP2106N3-G Bulk 36 Weeks, 1 Days 1
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    VP2106N3-G Tray 7 Weeks 490
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    VP2106N3-G Tray 4 Weeks 260
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    VP2106N3-G Bag 4 Weeks 2,000
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    Mouser Electronics VP2106N3-G 12,987
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    Microchip Technology Inc VP2106N3-G 250
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    Onlinecomponents.com VP2106N3-G 6,008
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    TME VP2106N3-G 44 1
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    NAC VP2106N3-G Bag 2,000
    • 1 $0.37
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    Master Electronics VP2106N3-G 6,008
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    Find more VP2106 price and stock on Findchips.com

    VP2106 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    VP2106 Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VP2106N3 Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    VP2106N3 Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VP2106N3-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 0.25A TO92-3 Original PDF
    VP2106ND Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF

    VP2106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability


    Original     		PDF VP2106 VP2106 DSFP-VP2106 A012409

    VP2106

    Abstract: VP2106N3 VP2110 VP2110K1 VP2110ND
    Text: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-236AB* Die† -60V 12Ω -0.5A VP2106N3 — — -100V 12Ω -0.5A — VP2110K1 VP2110ND Product marking for SOT-23:


    Original     		PDF VP2106 VP2110 O-236AB* VP2106N3 -100V VP2110K1 VP2110ND OT-23: OT-23. VP2106 VP2106N3 VP2110 VP2110K1 VP2110ND

    VP2106

    Abstract: No abstract text available
    Text: VP2106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VP2106 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


    Original     		PDF VP2106 VP2106 A022009

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VP2106 P-Channel Enhancement-Mode Vertical DMOS FETs General Description Features ►► ►► ►► ►► ►► ►► ►► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,


    Original     		PDF VP2106 DSFP-VP2106 C082313

    Untitled

    Abstract: No abstract text available
    Text: VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF VP2106 DSFP-VP2106 A091508

    Untitled

    Abstract: No abstract text available
    Text: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-236AB* Die† Product marking for SOT-23: -60V 12Ω -0.5A VP2106N3 — — P1A❋ -100V 12Ω -0.5A


    Original     		PDF VP2106 VP2110 O-236AB* OT-23: VP2106N3 -100V VP2110K1 VP2110ND OT-23.

    SIVP

    Abstract: VP2106
    Text: VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP2106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF VP2106 VP2106 DSFP-VP2106 A012409 SIVP

    VP2106

    Abstract: No abstract text available
    Text: Supertex inc. VP2106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VP2106 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original     		PDF VP2106 VP2106 A031610

    VP2106

    Abstract: VP2106N3 VP2110 VP2110K1 VP2110ND
    Text: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-236AB* Die† Product marking for SOT-23: -60V 12Ω -0.5A VP2106N3 — — P1A❋ -100V 12Ω -0.5A


    Original     		PDF VP2106 VP2110 O-236AB* OT-23: VP2106N3 -100V VP2110K1 VP2110ND OT-23. VP2106 VP2106N3 VP2110 VP2110K1 VP2110ND

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds


    Original     		PDF VP2106 VP2106 DSFP-VP2106 B042911

    transistors N3

    Abstract: No abstract text available
    Text: VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF VP2106 VP2106 DSFP-VP2106 A020408 transistors N3

    VP2110N3

    Abstract: VP2106 VP2106N3 VP2106ND VP2110 VP2110K1 VP2110ND 944 SOT23
    Text: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 DICE† TO-236AB* Product marking for SOT-23: -60V 12Ω -0.5A VP2106N3 VP2106ND - P1A❋ -100V 12Ω


    Original     		PDF VP2106 VP2110 O-236AB* OT-23: VP2106N3 VP2106ND -100V VP2110N3 VP2110ND VP2110K1 VP2110N3 VP2106 VP2106N3 VP2106ND VP2110 VP2110K1 VP2110ND 944 SOT23

    VP2110

    Abstract: VP2110K1 VP2110ND VP2106 VP2106N3 VP2106ND
    Text: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-236AB* Die† Product marking for SOT-23: -60V 12Ω -0.5A VP2106N3 — VP2106ND P1A❋ -100V 12Ω


    Original     		PDF VP2106 VP2110 O-236AB* OT-23: VP2106N3 VP2106ND -100V VP2110K1 VP2110ND OT-23. VP2110 VP2110K1 VP2110ND VP2106 VP2106N3 VP2106ND

    TN0604N3

    Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
    Text: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -


    Original     		PDF 2N6659 VN2210N2 TN0104N3 2N7007 TN5325N3 AN0332 AP0332 VN2110K1 BSS123 DN2535 TN0604N3 HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex

    TDA8361E

    Abstract: tda8362e VY17169-2 PCF7943 PCF7943AT ON4292 P87C380AER PCF7943AT/1091C420 PCF7943AT/1091C315 TDA8359J equivalent
    Text: PHILIPS SEMICONDUCTORS Product discontinuation Notice DN46 December 31, 2001 SEE DN46 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


    Original     		PDF VY27329-2 30-Sep-02 30-Dec-02 VY27340A2 VY27340A1 01-Jun-02 TDA8361E tda8362e VY17169-2 PCF7943 PCF7943AT ON4292 P87C380AER PCF7943AT/1091C420 PCF7943AT/1091C315 TDA8359J equivalent

    TO243AA

    Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
    Text: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G


    Original     		PDF 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G TO243AA TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


    Original     		PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    Untitled

    Abstract: No abstract text available
    Text: VP2106 VP2110 Superte jc¡ne. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BV Order Number / Package ^DS ON ' d (ON) (max) (min) TO-92 TO-236AB* Diet 12fi -0.5A VP2106N3 — VP2106ND P1 A * VP2110ND where * = 2-week alpha date code


    OCR Scan     		PDF VP2106 VP2110 VP2106N3 O-236AB* VP2110K1 VP2106ND VP2110ND OT-23: -100V VP2106/VP2110

    Untitled

    Abstract: No abstract text available
    Text: ^ Supertex inc. VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs BVdss/ ^DS ON B V dos (max) -60V 120 -100V If Ordering Information_ _ _ -0.5A -0.5A 120 Order Number / Package TO-92 DICE* TO-236AB* VP2106N3 VP2106ND - VP2110ND VP2110N3


    OCR Scan     		PDF VP2106 VP2110 -100V VP2106N3 VP2106ND OT-23: O-236AB* VP2110ND VP2110N3 VP2110K1

    MARKING P1a

    Abstract: VP2110N3
    Text: = J U r — J J j S VP2106 VP2110 . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package I d (ON) BVdgs (max) (min) TO-92 DICE+ TO-236AB* -60V 12Q -0.5A VP2106N3 VP2106ND - -100V 12Q -0.5A VP2110N3 VP2110ND


    OCR Scan     		PDF VP2106 VP2110 VP2106N3 VP2110N3 -100V VP2106ND VP2110ND O-236AB* VP2110K1 OT-23: MARKING P1a VP2110N3

    VP2110N3

    Abstract: VP21A vp2104
    Text: VP21A inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices II Order Number / Package BV DSS/ R d S O N BV dgs (max) TO-92 DICE+ -40V 12Î2 -0.5A VP2104N3 VP2104ND -60V 12 £! -0.5A VP2106N3 VP2106ND -100V 12Q


    OCR Scan     		PDF VP21A -100V VP2104N3 VP2106N3 VP2110N3 VP2104ND VP2106ND VP2110ND VP21A vp2104

    Untitled

    Abstract: No abstract text available
    Text: VP2106 VP2110 Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / ^DS ON ^D(ON) b v dgs (max) (min) TO-92 TO-236AB* Diet -60V 12& -0.5 A VP2106N3 — — -100V 12& -0.5 A — VP2110K1 VP2110ND Product marking for SOT-23:


    OCR Scan     		PDF VP2106 VP2110 O-236AB* VP2106N3 -100V VP2110K1 VP2110ND OT-23: VP2106/VP2110

    Backlight Drivers

    Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
    Text: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs


    OCR Scan     		PDF HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 SR036 SR037 HV9904 HV9100 HV9102 HV9103 Backlight Drivers P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter