d1763
Abstract: d1780 D1780 transistor TRANSISTOR D1792 D1789 transistor D1795 D1789 NT 407 F transistor D1778 D1795 transistor
Text: PRELIMINARY DATA SHEET SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of
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NEL2012F03-24
NEL2012F03-24
d1763
d1780
D1780 transistor
TRANSISTOR D1792
D1789 transistor
D1795
D1789
NT 407 F transistor
D1778
D1795 transistor
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DICLAD522T
Abstract: NEL2001 NEL2004 NEL2012 NEL2035 NEL2035F03-24 V06C ZO 189 transistor
Text: DATA SHEET SILICON POWER TRANSISTOR NEL2035F03-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier OUTLINE DIMENSIONS Unit: mm 2.8 ±0.2 NEL2035F03-24 of NPN epitaxial microwave power transistors 2 It incorporates emitter ballast resistors, gold metallizations and
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NEL2035F03-24
NEL2035F03-24
DICLAD522T
NEL2001
NEL2004
NEL2012
NEL2035
V06C
ZO 189 transistor
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nec 0882
Abstract: transistor NEC 0882 p NEC silicon epitaxial power transistor 1694 al 232 nec TRANSISTOR 0835 1652 nec
Text: PRELIMINARY DATA SHEET_ SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of
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OCR Scan
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PDF
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NEL2012F03-24
NEL2012F03-24
nec 0882
transistor NEC 0882 p
NEC silicon epitaxial power transistor 1694
al 232 nec
TRANSISTOR 0835
1652 nec
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NEC CI 506
Abstract: NEL2012F03-24 P11768EJ1V0DS00 V06C transistor 1654 transistor 1653 1656 nec nec 150 j04
Text: PRELIMINARY DATA SHEET_ SILICON POWER TRANSISTOR NEL2012F03-24 NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of
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OCR Scan
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PDF
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NEL2012F03-24
NEL2012F03-24
DICLAD522TÂ
NEC CI 506
P11768EJ1V0DS00
V06C
transistor 1654
transistor 1653
1656 nec
nec 150 j04
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