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    DIAGRAM AMPLIFIER TRANSISTOR Search Results

    DIAGRAM AMPLIFIER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    DIAGRAM AMPLIFIER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    P008B

    Abstract: 2N5415S
    Text: 2N5415S HIGH-VOLTAGE AMPLIFIER DESCRIPTION The 2N5415S is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case, intended for high vol-tage switching and linear amplifier applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


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    2N5415S 2N5415S P008B PDF

    ph probe amplifier

    Abstract: oxygen sensor operational amp AD535 AD549 photodiode ge 3000 watt inverter power reference design circuit electrometer AD549J AD549JH AD549K
    Text: Ultralow Input Bias Current Operational Amplifier AD549 CONNECTION DIAGRAM FEATURES APPLICATIONS Electrometer amplifiers Photodiode preamp pH electrode buffer Vacuum ion gauge measurement PRODUCT DESCRIPTION The AD5491 is a monolithic electrometer operational amplifier


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    AD549 AD5491 AD549JH AD549KH AD549LH AD549SH/883B C00511 ph probe amplifier oxygen sensor operational amp AD535 AD549 photodiode ge 3000 watt inverter power reference design circuit electrometer AD549J AD549JH AD549K PDF

    BC394

    Abstract: No abstract text available
    Text: BC394 EPITAXIAL PLANAR NPN • HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. TO-18 INTERNAL SCHEMATIC DIAGRAM


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    BC394 BC394 PDF

    2N5179

    Abstract: schematic diagram dc converter 72 v to 12 v 714PS
    Text: 2N5179 VHF/UHF AMPLIFIER DESCRIPTION The 2N5179 is a silicon planar epitaxial NPN transistor in Jedec TO-72 metal case, intended for lownoise tuned-amplifier and converter applications up to 500 MHz. TO-72 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


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    2N5179 2N5179 schematic diagram dc converter 72 v to 12 v 714PS PDF

    BC142

    Abstract: bc142 transistor transistor BC142
    Text: BC142 AUDIO AMPLIFIER DESCRIPTION The BC142 is a silicon planar epitaxial NPN transistor in a TO-39 metal case specially intented for use as driver in high power audio amplifier. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value


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    BC142 BC142 bc142 transistor transistor BC142 PDF

    BC287

    Abstract: transistor BC287 transistor BC286 BC286
    Text: BC287 AUDIO AMPLIFIER DESCRIPTION The BC287 is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case. It is particularly intended for use as audio amplifier. The complementary NPN type is the BC286. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


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    BC287 BC287 BC286. transistor BC287 transistor BC286 BC286 PDF

    RGPA03

    Abstract: WiMAX transceivers
    Text: RFIC Solutions Inc. Preliminary Datasheet RGPA03 Power Amplifier Description . Functional Diagram . The RGPA03 is a 3.4 to 3.6 GHz high efficiency GaAs Enhancement mode psuedomorphic high electron mobility transistor MMIC Power Amplifier. It has been designed for use in the 3.5 GHz WiMax


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    RGPA03 RGPA03 WiMAX transceivers PDF

    bc286

    Abstract: transistor BC286 transistor BC287 BC287 BC286 transistor
    Text: BC286 AUDIO AMPLIFIER DESCRIPTION The BC286 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is mainly intended for use as audio amplifier. The complementary PNP type is the BC287. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


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    BC286 BC286 BC287. transistor BC286 transistor BC287 BC287 BC286 transistor PDF

    2N4427

    Abstract: BFR98 transistor 2N4427 2n4427-bfr98
    Text: 2N4427 BFR98 VHF OSCILLATOR POWER AMPLIFIER DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier and oscillator applications. TO-39 INTERNAL SCHEMATIC DIAGRAM


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    2N4427 BFR98 2N4427 BFR98 2N4427-BFR98 transistor 2N4427 2n4427-bfr98 PDF

    BC394

    Abstract: BC393
    Text: BC394 HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. The complementary PNP type is the BC393. TO-18 INTERNAL SCHEMATIC DIAGRAM


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    BC394 BC394 BC393. 19ise BC393 PDF

    BC393

    Abstract: BC394
    Text: BC393 HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC393 is a silicon planar epitaxial PNP transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. The complementary NPN type is the BC394. TO-18 INTERNAL SCHEMATIC DIAGRAM


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    BC393 BC393 BC394. 20ise BC394 PDF

    5404R91-005

    Abstract: murata REEL label lot number 5404R23-046
    Text: DATA SHEET SKY65120: 2110–2170 MHz High Linearity 2 W Power Amplifier Functional Block Diagram Applications Features ● ● ● ● ● Description VREF1 VREF2 VCC2 Active Bias RF In Interstage Match Input Match Output Match Stage 1 RF Out Stage 2 Package Diagram


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    SKY65120: SKY65120 20-pin, 5404R91-005 murata REEL label lot number 5404R23-046 PDF

    5404R91-005

    Abstract: C3216X5R0J106K
    Text: DATA SHEET SKY65120: 2110–2170 MHz High Linearity 2 W Power Amplifier Functional Block Diagram Applications Features ● ● ● ● ● Description VREF1 VREF2 VCC2 Active Bias RF In Interstage Match Input Match Output Match Stage 1 RF Out Stage 2 Package Diagram


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    SKY65120: SKY65120 20-pin, 5404R91-005 C3216X5R0J106K PDF

    bfy76

    Abstract: No abstract text available
    Text: BFY76 LOW-LEVEL, LOW-NOISE AMPLIFIER DESCRIPTION The BFY76 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for use in high performance, low-level, low-noise amplifier circuits from audio to high frequencies. TO-18 INTERNAL SCHEMATIC DIAGRAM


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    BFY76 BFY76 PDF

    Marking code mps

    Abstract: No abstract text available
    Text: NPN MPS8098, MPS8099*, (PNP) MPS8598, MPS8599* *Preferred Device Amplifier Transistors Voltage and Current are Negative for PNP Transistors http://onsemi.com MAXIMUM RATINGS Rating MARKING DIAGRAM Symbol Collector −Emitter Voltage MPS8098, MPS8598 MPS8099, MPS8599


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    MPS8098, MPS8099* MPS8598, MPS8599* MPS8598 MPS8099, MPS8599 Marking code mps PDF

    15w audio amplifier circuit diagram

    Abstract: LM1876T 2 x 20w amplifier mute 2 x 20w amplifier mute standby current LM1876TF LM1876 AMPLIFIER 2X15W LM1876 9v 50 watt audio amplifier circuit diagram TF15B
    Text: LM1876 - Overture Audio Power Amplifier Series Dual 20-Watt Audio Power Amplifier with Mute and Standby Modes Connection Diagram Typical Application Features click for larger image • SPiKe protection • Minimal amount of external components necessary • Quiet fade-in/out mute mode


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    LM1876 20-Watt 15-lead O-220 15w audio amplifier circuit diagram LM1876T 2 x 20w amplifier mute 2 x 20w amplifier mute standby current LM1876TF LM1876 AMPLIFIER 2X15W 9v 50 watt audio amplifier circuit diagram TF15B PDF

    BFG425W

    Abstract: BP317 micro amplifier 471 Hewlett-Packard transistor microwave philips 23 0805CS philips application notes
    Text: APPLICATION INFORMATION 1.9 GHz low noise amplifier with the BFG425W Philips Semiconductors Application information 1.9 GHz low noise amplifier with the BFG425W CIRCUIT DIAGRAM R5 handbook, full pagewidth C6 R1 R4 R3 C2 C3 +Vsupply C4 L2 L1 input 50 Ω C5


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    BFG425W MGS733 125006/01/pp8 BFG425W BP317 micro amplifier 471 Hewlett-Packard transistor microwave philips 23 0805CS philips application notes PDF

    TRANSISTOR C 2 SUB

    Abstract: UPA102G UPA102B
    Text: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM Top View • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: (9 GHz Single Transistors) • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded


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    UPA102B UPA102G UPA102B: 14-pin UPA102G: UPA102B/G 14-pin TRANSISTOR C 2 SUB UPA102G UPA102B PDF

    Untitled

    Abstract: No abstract text available
    Text: juA774BQB Operational Amplifier FA IRCHILD A Schlumberger Company MIL-STD-883 July 1986— Rev 1s Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 14-Lead DIP Top View This monolithic JFET input operational amplifier incorpo­


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    juA774BQB MIL-STD-883 14-Lead MA774BDMQB Mil-M-38510, PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4136QB Quad Operational Amplifier FA IRCHILD A Schlumberger Company MIL-STD-883 July 1986— Rev 16 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 14-Lead DIP Top View The juA4136QB Monolithic Quad Operational Amplifier con­


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    MA4136QB MIL-STD-883 14-Lead A4136QB iA4136QB juA4136QB BD00331F PDF

    Untitled

    Abstract: No abstract text available
    Text: Z * EXflR XR-2247/2247A Floppy Disk Write Amplifier FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-2247/2247A is a write amplifier designed to pro­ vide the complete interface between write data signals and tunnel-erase magnetic heads. Although primarily


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    XR-2247/2247A XR-2247/ XR-2247 XR-2247A. RS232C XR-1488 XR-1489A XR-1488N PDF

    Untitled

    Abstract: No abstract text available
    Text: FA IR C HILD A Schlumberger Company MA772BQB Operational Amplifier MIL-STD-883 July 1986— Rev 15 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 8-Lead Can Top View This monolithic JFET input operational amplifier incorpo­


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    MA772BQB MIL-STD-883 juA772BQB PDF

    XR-1488

    Abstract: XR-2247ACN XR-2247ACP XR-2247CN XR-2247CP MAGNETIC HEAD circuit 7 pin MAGNETIC HEAD read amplifier XR-22 capacitor 2247 2247C
    Text: Z* EXAR XR-2247/2247A Floppy Disk Write Amplifier FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-2247/2247A is a write amplifier designed to pro­ vide the complete interface between write data signals and tunnel-erase magnetic heads. Although primarily


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    XR-2247/2247A XR-2247 XR-2247A XR-22471 XR-2247A. RS232C XR-1489A RS232Cto XR-1488N XR-1488 XR-2247ACN XR-2247ACP XR-2247CN XR-2247CP MAGNETIC HEAD circuit 7 pin MAGNETIC HEAD read amplifier XR-22 capacitor 2247 2247C PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hFE CONNECTION DIAGRAM (Topview) UPA102G 14 LINEARITY • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE


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    UPA102G UPA102G OUTUNEG14 UPA102G-E1 2500/REEL PDF