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    DIACS LOW CURRENT Search Results

    DIACS LOW CURRENT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    DIACS LOW CURRENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diac triac control circuit motor

    Abstract: diac with triac DIAC-Triac DIAC-Triac applications datasheet DIAC bidirectional diode thyristor diac DIAC DIAC-Triac full wave phase control applications diac data sheet diac triac
    Text: LSDB3, LSDB4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current.


    Original     		PDF LS-34 diac triac control circuit motor diac with triac DIAC-Triac DIAC-Triac applications datasheet DIAC bidirectional diode thyristor diac DIAC DIAC-Triac full wave phase control applications diac data sheet diac triac

    Untitled

    Abstract: No abstract text available
    Text: DB3,DB4,DB6 SILICON BIDIRECTIONAL DIACS POWER DISSIPATION 150 mW DO - 35 FEATURES ●Three way layer two terminal, axial lead , .020 TYP. 0.51 hermetically sealed diacs are designed specifically for triggering thyrisitors .The demonstrate low breakover current.


    Original     		PDF DO-35case. 100Hz

    bl db3 galaxy

    Abstract: bl db3 db3 bl DIACs
    Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse


    Original     		PDF 1111sealed 1111thyristors 1111breakover 1111current 1111volts DO-35 100Hz bl db3 galaxy bl db3 db3 bl DIACs

    Untitled

    Abstract: No abstract text available
    Text: BL GALAXY ELECTRICAL DB3M.DB4M SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES MINI-MELF Cathode indification φ1 .5±0.1 The three layer,two termnal,hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low break over current at break


    Original     		PDF 100Hz

    Untitled

    Abstract: No abstract text available
    Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at


    Original     		PDF 1111sealed 1111thyristors 1111breakover 1111current 1111volts DO-35 100Hz

    bl db3 galaxy

    Abstract: db3 bl DB3 galaxy bl db3 bl db4 Galaxy Semiconductor db3 DIACS db3 a-405 A-405
    Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse


    Original     		PDF 1111sealed 1111thyristors 1111breakover 1111current 1111volts 100Hz bl db3 galaxy db3 bl DB3 galaxy bl db3 bl db4 Galaxy Semiconductor db3 DIACS db3 a-405 A-405

    Untitled

    Abstract: No abstract text available
    Text: BL GALAXY ELECTRICAL DB3S.DB4S SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at


    Original     		PDF 1111sealed 1111thyristors 1111breakover 1111current 1111volts 100Hz

    Untitled

    Abstract: No abstract text available
    Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse


    Original     		PDF 1111sealed 1111thyristors 1111breakover 1111current 1111volts 100Hz

    bl db3 galaxy

    Abstract: db3 bl 100HZ 05R05 DB3 galaxy
    Text: BL GALAXY ELECTRICAL DB3.DB4 SILICON BIDIRECTIONAL DIACS FEATURES The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse


    Original     		PDF 1111sealed 1111thyristors 1111breakover 1111current 1111volts 100HZ bl db3 galaxy db3 bl 100HZ 05R05 DB3 galaxy

    DB3 ST

    Abstract: diac db3 db3 diac range EQUIVALENT NO. OF DB3 DIAC db3 diac DIAC-Triac datasheet DIAC diac DB3 application note DIAC BR 100 DIAC-Triac applications
    Text: DB3, DB4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current.


    Original     		PDF

    05R05

    Abstract: No abstract text available
    Text: DB3M.DB4M SILICON BIDIRECTIONAL DIACS VOLTAGE RANGE: 28-45 V FEATURES MINI-MELF Cathode indification φ1 .5±0.1 The three layer,two termnal,hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low break over current at break


    Original     		PDF 500KD 100Hz 05R05

    100HZ

    Abstract: No abstract text available
    Text: DB3,DB4,DB6 SILICON BIDIRECTIONAL DIACS POWER DISSIPATION DO- 41 FEATURES 150 mW DO-35 GLASS ●Three way layer two terminal, axial lead , hermetically sealed diacs are designed specifically for .034(0.9) DIA .028(0.7) triggering thyrisitors .The demonstrate low breakover current.


    Original     		PDF DO-35 DO-41case. 100Hz 100HZ

    Untitled

    Abstract: No abstract text available
    Text: DB3/DB4 Silicon Bidirectional Diacs VOLTAGE RANGE: 28-45 V A-405 Features The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse


    Original     		PDF 1111sealed 1111thyristors 1111breakover 1111current 1111volts 120Hz 500KD 100Hz

    DIAC-Triac

    Abstract: DIAC-Triac* 120v DIACS Low Voltage DIACs DIAC DB 32 phase control of triac diac with triac speed control Diac DB 3 DIAC EQUIVALENT circuit triac and diac
    Text: LLDB-3, LLDB-4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover


    Original     		PDF 150oC DIAC-Triac DIAC-Triac* 120v DIACS Low Voltage DIACs DIAC DB 32 phase control of triac diac with triac speed control Diac DB 3 DIAC EQUIVALENT circuit triac and diac

    DB3 ST

    Abstract: DIACS Low Voltage DIACs thyristor motor speed control circuit DIACS low current universal MOTOR speed control DC34 ST DB3
    Text: DB3, DB4, DC34 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse


    Original     		PDF DO-35 DB3 ST DIACS Low Voltage DIACs thyristor motor speed control circuit DIACS low current universal MOTOR speed control DC34 ST DB3

    DB3 ST

    Abstract: ST diac DB3 DIAC DB3 DIAC BR 100 diac DB3 application note DIAC EQUIVALENT circuit EQUIVALENT NO. OF DB3 DIAC ST DB3 DIAC semtech DIAC EQUIVALENT
    Text: DB3, DB4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current.


    Original     		PDF

    DIAC DB 32

    Abstract: Diac DB 3 DIAC-Triac DIACS Low Voltage DIACs DIAC-Triac* 120v DIAC diac with triac speed control diac triac triac and diac
    Text: DB-3, DB-4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The


    Original     		PDF 150oC DIAC DB 32 Diac DB 3 DIAC-Triac DIACS Low Voltage DIACs DIAC-Triac* 120v DIAC diac with triac speed control diac triac triac and diac

    DIAC-Triac applications

    Abstract: diac DIAC-Triac full wave phase control applications DIAC-Triac DIAC-Triac* 120v triac and diac diac with triac bidirectional diode thyristor diac diac triac diac triac control circuit motor
    Text: LSDB-3, LSDB-4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover


    Original     		PDF LS-34 DIAC-Triac applications diac DIAC-Triac full wave phase control applications DIAC-Triac DIAC-Triac* 120v triac and diac diac with triac bidirectional diode thyristor diac diac triac diac triac control circuit motor

    DIAC DB 32

    Abstract: DIAC-Triac Diac DB 3 diac DIACS diac DB-3 datasheet DIAC bidirectional trigger diac db3 diac of . OF DB4 DIAC
    Text: DB-3, DB-4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover


    Original     		PDF 150oC DIAC DB 32 DIAC-Triac Diac DB 3 diac DIACS diac DB-3 datasheet DIAC bidirectional trigger diac db3 diac of . OF DB4 DIAC

    DIAC-Triac* 120v

    Abstract: DIAC-Triac DIACS Low Voltage DIACs DIAC DB 32 Diac DB 3 diac with triac speed control datasheet DIAC DIAC EQUIVALENT circuit DIAC semtech
    Text: LLDB-3, LLDB-4 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover


    Original     		PDF 150oC DIAC-Triac* 120v DIAC-Triac DIACS Low Voltage DIACs DIAC DB 32 Diac DB 3 diac with triac speed control datasheet DIAC DIAC EQUIVALENT circuit DIAC semtech

    Low Voltage DIACs

    Abstract: No abstract text available
    Text: DB3/DB4 Silicon Bidirectional Diacs VOLTAGE RANGE: 28-45 V DO-35 Features The three layer,two termnal,axial lead,hermetically 1111sealed diacs are designed specifically for triggering 1111thyristors.They demonstrate low breakover current at 1111breakover voltage as they withstand peak pulse


    Original     		PDF DO-35 1111sealed 1111thyristors 1111breakover 1111current 1111volts 120Hz 500KD 100Hz Low Voltage DIACs

    Untitled

    Abstract: No abstract text available
    Text: DB3,DB4,DB6 SILICON BIDIRECTIONAL DIACS POWER DISSIPATION 150 mW DO- 41 FEATURES ●Three way layer two terminal, axial lead , hermetically sealed diacs are designed specifically for triggering thyrisitors .The demonstrate low breakover current. The breakover symmetry is within three volts DB3,DB4


    Original     		PDF DO-41case. 100Hz

    bidirectional diode thyristor diac

    Abstract: diacs DB-3 DIACS diac DIACS low current Low Voltage DIACs diode db3 triacs speed DB3 DIAC Bi-directional Trigger Diode
    Text: DIACS DB-3 SILICON BIDIRECTIONAL DIAC The glass passivated, three-layer, two terminal, axial lead, herm etically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they w ithstand peak pulse current. The breakover


    OCR Scan     		PDF DO-35 bidirectional diode thyristor diac diacs DB-3 DIACS diac DIACS low current Low Voltage DIACs diode db3 triacs speed DB3 DIAC Bi-directional Trigger Diode

    10KO

    Abstract: No abstract text available
    Text: 3X D B 3 > D B 4 > SILICON D B 6 POWER DISSIPATION 150 mW BIDIRECTIONAL DIACS D0-35ÎGL ASS FEATURES • Three way layer, two terminal,axial lead, hermetically sealed diacs are designed specifically for triggering thyrisitors. They demonstrate low breakover current at breakover voltage as they


    OCR Scan     		PDF DO-35 500KQ 10KO