transistor ag qs
Abstract: transistor smd hq transistor di 960 TRANSISTOR SMD CODE 6.8
Text: SIEMENS SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme di//df rated • 150°C operating temperature Type V^DS b SPPX2N60S5 600 V 11.3 A 380 mQ
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SPPX2N60S5
SPBX2N60S5
X2N60S5
P-T0220-3-1
P-T0263-3-2
transistor ag qs
transistor smd hq
transistor di 960
TRANSISTOR SMD CODE 6.8
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half bridge smps
Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET welding equipment smps schematic STE36N50-DK h bridge ups circuit schematic diagram STE36N50DK E81743 STE36N50-DA STTA2006P FRM 5 N 144 DS
Text: STE36N50-DK N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE TYPE STE36N50-DK V DSS R DS on ID 500 V < 0.14 Ω 36 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DEDICATED FOR POWER FACTOR CORRECTOR APPLICATIONS LOW GATE CHARGE MOSFET
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STE36N50-DK
E81743)
half bridge smps
SWITCHING WELDING SCHEMATIC BY MOSFET
welding equipment smps schematic
STE36N50-DK
h bridge ups circuit schematic diagram
STE36N50DK
E81743
STE36N50-DA
STTA2006P
FRM 5 N 144 DS
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Untitled
Abstract: No abstract text available
Text: SIEMENS SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme dv/dt rated • 150°C operating temperature Type ^DS b SPPX2N60S5 600 V 11.3 A 380 m il
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SPPX2N60S5
SPBX2N60S5
X2N60S5
P-T0220-3-1
P-T0263-3-2
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half bridge SMPS
Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET STE36N50-DK smps circuit diagram h bridge ups circuit schematic diagram welding equipment smps schematic transistor da 307 STE36N50-DA STTA2006P FRM 5 N 144 DS
Text: STE36N50-DA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE TYPE STE36N50-DA V DSS R DS on ID 500 V < 0.14 Ω 36 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ ■ LOW GATE CHARGE MOSFET TURBOSWITCH DIODE INCORPORATED HIGH CURRENT POWER MODULE
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STE36N50-DA
E81743)
half bridge SMPS
SWITCHING WELDING SCHEMATIC BY MOSFET
STE36N50-DK
smps circuit diagram
h bridge ups circuit schematic diagram
welding equipment smps schematic
transistor da 307
STE36N50-DA
STTA2006P
FRM 5 N 144 DS
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A1000-REV00k9040-IE
Abstract: AX-REM01K9050-IE A1000-REV00k6050-IE a1000-fia3071-re A1000FIA3105RE A1000-FIV3005-RE AX-FIM1024-RE
Text: Listino prezzi Validità 1° GENNAIO 2014 industrial.omron.it /67/238731'</32+ +22'/3 ";CI?A; A?;CI;, ? ? :;:?97I?7AH;IIDG;;A;IIGDC?9D G;AE;G9?G9J?IDHI7BE7ID B?9GD?CI;GGJIIDG? ;99
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ignition coil IGBT
Abstract: AN 484-A Motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MGP15N40CL Internally Clam ped N-Ctiannel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features G ate-Em itter ESD protection, Gate Collector O verVoltage Protection from monolithic circuitry for usage as an Ignition
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MGP15N40CL
21A-09
O-220AB
300uH
ignition coil IGBT
AN 484-A Motorola
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irf 540 mosfet
Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Text: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-90875C
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
irf 540 mosfet
ls 7400
PD908
014 IR MOSFET Transistor
IRFM064
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irf 540 mosfet
Abstract: IRFM064
Text: PD - 90875A POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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0875A
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
irf 540 mosfet
IRFM064
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Untitled
Abstract: No abstract text available
Text: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) 0.017 Ω IRFM064 ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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PD-90875C
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
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induction cooking
Abstract: 035H IRG4PH40UD2-EP IRGP30B120KD-E TO247AD package
Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-EP
200kHz
O-247AD
induction cooking
035H
IRG4PH40UD2-EP
IRGP30B120KD-E
TO247AD package
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Untitled
Abstract: No abstract text available
Text: PD- 91777 IRG4PH20KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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IRG4PH20KD
Minimized331
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IRG4PH20KD
Abstract: No abstract text available
Text: PD- 91777 IRG4PH20KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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IRG4PH20KD
IRG4PH20KD
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IRG4PH20KD
Abstract: No abstract text available
Text: PD- 91777 IRG4PH20KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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IRG4PH20KD
IRG4PH20KD
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Untitled
Abstract: No abstract text available
Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-EP
200kHz
O-247AD
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ST T4 3660
Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
Text: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-E
200kHz
O-247AD
ST T4 3660
035H
IRFPE30
IRG4PH40UD2-E
induction cooking
ge 6220
induction cooking circuits
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IRG4PH40UD2-EP
Abstract: 035H IRGP30B120KD-E
Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-EP
200kHz
O-247AD
IRG4PH40UD2-EP
035H
IRGP30B120KD-E
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ld smd transistor
Abstract: 78 DIODE SMD KRF2805S 104A smd diode JC 68
Text: Transistors IC SMD Type HEXFET Power MOSFET KRF2805S TO-263 Features Unit: mm 1 .2 7 -0+ 0.1.1 Advanced Process Technology Ultra Low On-Resistance +0.1 1.27-0.1 +0.2 4.57-0.2 Dynamic dv/dt Rating 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 Repetitive Avalanche Allowed up to Tjmax
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KRF2805S
O-263
11gate
22drain
33source
ld smd transistor
78 DIODE SMD
KRF2805S
104A
smd diode JC 68
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ST T4 3660
Abstract: 035H IRFPE30 IRG4PH40UD2-E TO247AD package marking GC diode induction cooking circuits induction cooking
Text: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in
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6781A
IRG4PH40UD2-E
200kHz
O-247AD
ST T4 3660
035H
IRFPE30
IRG4PH40UD2-E
TO247AD package
marking GC diode
induction cooking circuits
induction cooking
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IRFM064
Abstract: beryllium oxide international rectifier cds
Text: Data Sheet No. PD-9.875 INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ64 N-CHANNEL 60 Volt, 0.017 Ohm HEXFET Product Summary The HEXFE T® technology is the key to International Part Num ber BV q s S IR F M 0 6 4
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IRFM064
IRFM064D
IRFM064U
O-254
MIL-S-19500
I-292
IRFM064
beryllium oxide international rectifier cds
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AO4850
Abstract: No abstract text available
Text: AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4850 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs may be used in H-bridge, Inverters and other applications.
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AO4850
AO4850
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Untitled
Abstract: No abstract text available
Text: AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4850 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs may be used in H-bridge, Inverters and other applications.
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AO4850
AO4850
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US5U2
Abstract: No abstract text available
Text: US5U2 Transistors 4V Drive Nch+SBD MOS FET US5U2 zStructure Silicon N-channel MOS FET / Schottky barrier diode zExternal dimensions Unit : mm TUMT5 2.0 0.85Max. 1.7 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 2.1 (5) 0.2 0.65 0.65 zFeatures 1) Nch MOS FET and schottky barrier diode
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85Max.
15Max.
US5U2
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uL190
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE /OPT O} 9097250 TOSHIBA TT 99D C D ISC RETE/O PTO »FI t OTVESO GGltTG? 16707 UT-39-1I SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA SILICON N CHANNEL MOS TYPE 7T-MOS D ) 2 S K 5 3 2 INDUSTRIAL APPLICATIONS Unit in mm
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UT-39-1I
100nA
T0-220
uL190
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08CNE8N
Abstract: IPP08CNE8N JESD22 PG-TO220-3 D475A C3175
Text: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature
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IPB08CNE8N
IPI08CNE8N
IPP08CNE8N
PG-TO263-3
PG-TO262-3
PG-TO220-3
08CNE8N
08CNE8N
JESD22
PG-TO220-3
D475A
C3175
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