Untitled
Abstract: No abstract text available
Text: DGB8532 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)12.4G Frequency Max. (Hz)16G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage8.0 I(Oper.) Typ.(A) Oper. Current700m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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DGB8532
Power200m
Current700m
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Untitled
Abstract: No abstract text available
Text: Gunn Diodes Features • ■ ■ ■ ■ ■ ■ Spot Frequency Choice of Package Styles Range of Microwave Power Outputs Specific Types for Low Cost Commercial Applications High Reliability Special Screening to Customer Requirements Available Description
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DGB8332
Abstract: DGB8531 DGB8625 DGB8194 DGB8091 DGB8234 DGB8081 DGB8381 DGB8521
Text: 0585443 ALPHA IN D / SEM ICONDUCTOR DE | DSflS443 ODODS Eb 03E 00526 ôj~ft D 3 Gunn Diodes Features • • • • • • ä j Spot Frequency or Wideband Operation Choice of Package Styles Range of Microwave Power Outputs Specific Types for Low Cost Commercial Applications
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DSflS443
DGB8332
DGB8531
DGB8625
DGB8194
DGB8091
DGB8234
DGB8081
DGB8381
DGB8521
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gunn diodes
Abstract: alpha GUNN OSCILLATORS DGB8381 DGB8625 Gunn Diode x-band DGB8332 gunn x-band gunn diode DGB7131 DGB8281
Text: ALPHA IN » / SEMICONDUCTOR 4ÔE D • 0SÔ5443 00013=15 fln ■ ALP _ Gunn Diodes To~f-\ \ Features ■ ■ ■ ■ ■ ■ ■ Spot Frequency Choice of Package Styles Range of Microwave Power Outputs Specific Types for Low Cost Commercial Applications
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power001
gunn diodes
alpha GUNN OSCILLATORS
DGB8381
DGB8625
Gunn Diode x-band
DGB8332
gunn
x-band gunn diode
DGB7131
DGB8281
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