Untitled
Abstract: No abstract text available
Text: DGB8411 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power100m Frequency Min. (Hz)4.0G Frequency Max. (Hz)8.2G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage12 I(Oper.) Typ.(A) Oper. Current300m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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DGB8411
Power100m
Voltage12
Current300m
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Untitled
Abstract: No abstract text available
Text: Gunn Diodes Features • ■ ■ ■ ■ ■ ■ Spot Frequency Choice of Package Styles Range of Microwave Power Outputs Specific Types for Low Cost Commercial Applications High Reliability Special Screening to Customer Requirements Available Description
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DGB8332
Abstract: DGB8531 DGB8625 DGB8194 DGB8091 DGB8234 DGB8081 DGB8381 DGB8521
Text: 0585443 ALPHA IN D / SEM ICONDUCTOR DE | DSflS443 ODODS Eb 03E 00526 ôj~ft D 3 Gunn Diodes Features • • • • • • ä j Spot Frequency or Wideband Operation Choice of Package Styles Range of Microwave Power Outputs Specific Types for Low Cost Commercial Applications
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DSflS443
DGB8332
DGB8531
DGB8625
DGB8194
DGB8091
DGB8234
DGB8081
DGB8381
DGB8521
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