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    DG311 Price and Stock

    onsemi FDG311N

    MOSFET N-CH 20V 1.9A SC88
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    DigiKey FDG311N Cut Tape 1
    • 1 $0.46
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    FDG311N Reel
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    FDG311N Digi-Reel 1
    • 1 $0.46
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    Rochester Electronics LLC FDG311N

    MOSFET N-CH 20V 1.9A SC88
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    DigiKey FDG311N Bulk 1,466
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    Fairchild Semiconductor Corporation FDG311N

    Small Signal Field-Effect Transistor, 1.9A, 20V, N-Channel, MOSFET
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    Rochester Electronics FDG311N 63,674 1
    • 1 $0.2068
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    DG311 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DG311 CEIEC Connector: Terminal Blocks Connector: SKT: 3: 5.1: SCR: THRU Original PDF

    DG311 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DG500

    Abstract: PA66 GF 25 DG375 300V DG127 DG508H DG635 DG310 DG350 dg396
    Text: The PCB Terminal Blocks with 9 kinds of pitch:3.5, 3.81, 5.0, 5.08, 6.35, 7.5,7.62, 9.5, 10.0mm; with 3 kinds of wire insertion directions:90 degree,135 degree,180 degree, can be combined optionally to meet the customers' require. ¡¡ ¡¡ Model Pitch mm


    Original     		PDF DG300 DG360 DG166 DG500 DG301 DG365 DG305 DG103 DG500H DG128 DG500 PA66 GF 25 DG375 300V DG127 DG508H DG635 DG310 DG350 dg396

    Untitled

    Abstract: No abstract text available
    Text: 3ÜE T> m 7^237 QD31111 b m _ — XT V2> S - I ^ r z 7 SCS-THOMSON “ 7# i LH O ra iD i 2 N 2102 S G S-THOMSON GENERAL PURPOSE AMPLIFIER AND SWITCH D E S C R IP T IO N The 2N 2102 is a silicon planar epitaxial NPN trans­


    OCR Scan     		PDF QD31111

    Untitled

    Abstract: No abstract text available
    Text: 3QE D • 7^237 0031153 G T * 3s - is SGS-THOMSON [MOÛiiô&iOTlIRMOÛS 2N3019 2N3020 S G S-THOMSON HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTIO N The 2N3019 and 2N3020 are silicon planar epitax­ ial NPN transistors in Jedec TO-39 metal case, de­ signed for high-current, high-frequency amplifier


    OCR Scan     		PDF 2N3019 2N3020 2N3019 2N3020

    Untitled

    Abstract: No abstract text available
    Text: U s e r 's M a n u a l < £ 3 L 0 5 Chapter 5 Z8 In s t r u c t io n S et 5.1 Z8 FUNCTIONAL SUMMARY Z8 instructions can be divided functionally into the follow­ ing eight groups: • ■ ■ ■ Load Arithmetic Logical Program Control ■ ■ ■ ■ Bit Manipulation


    OCR Scan     		PDF 11110000B) 01111111B) 10001111B) 11110111B) 00000111B) 01101100B) 01101001B)

    ZENER B89

    Abstract: DD3113 650NM photodiode OPT202G 10DC CIPT202 OPT202 OPT202P OPT202W
    Text: Or, Call Customer Service at 1-800-548-6132 USA Only BURR - BROWN OPT202 1 E rrfT • PHOTODIODE SIZE: 0.090 x 0.090 inch (2.29 x 2.29mm) • 1M£2 FEEDBACK RESISTOR • HIGH RESPONSIVITY: 0.45A/W (650nm) • LOW DARK ERRORS: 2mV The CIPT202 is an optoelectronic integrated circuit


    OCR Scan     		PDF 50kHz 650nm) 400nA OPT209 OPT202 AB-061 17313LS D3113là ZENER B89 DD3113 650NM photodiode OPT202G 10DC CIPT202 OPT202 OPT202P OPT202W

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V4376FF-100,-83 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM


    OCR Scan     		PDF TC55V4376FF-100 072-WORD 36-BIT TC55V4376FF 592-bit 003110b LQFP100-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: 3GE D • 7^237 0031103 T ■ “T'-'SS'il rrr scs-th o m so n _ 7 # o ^ H tH M M Q S _ 2 N 3 7 2 5 S 6 S-TH0MS0N HIGH VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N3725 is a silicon planar epitaxial transistor in TO-39 metal case It is a high-voltage, high cur­


    OCR Scan     		PDF 2N3725 2N3725 DG311Ã S-4618 100KQ

    S/KMM5322200BW/BWG-6

    Abstract: M53222
    Text: K MM5 3 2 2 2 0 0 B W DRAM Modul e ELECTRONICS KMM5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KM M5322200BW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200BW consists of four CMOS


    OCR Scan     		PDF KMM5322200BW/BWG 2Mx32 1Mx16 M5322200BW KMM5322200BW 42-pin 72-pin S/KMM5322200BW/BWG-6 M53222

    Untitled

    Abstract: No abstract text available
    Text: KMM5322100BKU DRAM Module ELECTRONICS KMM53221OOBKU/BKUG Fast Page Mode 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM FEATURES GENERAL DESCRIPTION • Part Identification The Samsung KMM5322100BKU is a 2M bit x 32 - KMM5322100BKU 2048 cycles/32 ms Ref, SOJ, Solder


    OCR Scan     		PDF KMM5322100BKU KMM53221OOBKU/BKUG 2Mx32 KMM5322100BKU cycles/32 KMM5322100BKUG cydes/32 28-pin

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TM P47C853 CM OS 4-BiT M ICROCO NTRO LLER TMP47C853N TMP47C853F The 47C853 is a high perform ance, 4-bit single-chip microcomputer based on the TLCS-470A CMOS series. The 47C853 has a build-in large-capacity RAM fo r repertory dial and a DTMF generator, m aking it ideal for


    OCR Scan     		PDF P47C853 TMP47C853N TMP47C853F 47C853 TLCS-470A SD1P42-P-600-1 OFP44-P-1414-0