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    DF QC TRANSISTOR Search Results

    DF QC TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    DF QC TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: N T E ELECTRONICS INC •SSE D • bMBlEST OOÜ2fl7fl 042 B N T E rE Q F F A T l TRANSISTOR TRANSISTOR LOGIC Synchronous 16-Lead DIP, See Dlag. 249 Presettable Modulo 16 Counter 4-by-4-ReglsterFlle, Open Collector Output 16-Lead DIP, See Diag. 249 DataD2


    OCR Scan     		16-Lead PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Small switching 60V, 5A 2SK2503 • F e a tu re s • E x te rn a l d im en sion s (Units: mm) 1 ) Low on-resistance. 6.5±0.2 77F521 ^SSS a '-0.1 ! / 2) H igh-speed switching. 3) W ide S O A (safe operating area). 4) Low-voltage drive (4V).


    OCR Scan     		2SK2503 SC-63 77F521 do--30V PDF

    AN8829

    Abstract: 71BS sp600 A114M AN-8829
    Text: SP600 Semiconductor Features Half Bridge 500VDC Driver • Maximum Rating The SP600 is a sm art power high voltage integrated circuit HVIC optimized to drive MOS gated power devices in half­ bridge topologies. It provides the necessary control and management for PWM motor drive, power supply, and UPS


    OCR Scan     		SP600 500VDC SP600 350ns AN8829 71BS A114M AN-8829 PDF

    AN8829

    Abstract: IGBT W 15 NK 90 Z
    Text: SP600 i f H A R R IS S E M I C O N D U C T O R July 1998 •SjgSSk PIS ^«S22- Features Maximum R atin g . V 1. 500V Ability to Interface and Drive Standard and Current Sensing N-Channel Power MOSFET/IGBT Devices Creation and Managem ent of a Floating Power Supply


    OCR Scan     		SP600 S22500V 500VDC SP600 1-800-4-HARRIS AN8829 IGBT W 15 NK 90 Z PDF

    150eu

    Abstract: No abstract text available
    Text: ETN85-O5O 300a POWER TRANSISTOR MODULE • f ô f t ^ Featurés • 7 'J — 'J K rt/K Including Free Wheeling Diode • ASO ti'l a ^ v Excellent Safe Operating Area •m m Insulated Type ■ ffliÊ : A p p lic a tio n s "jT • High Power Switching • AC ^ —


    OCR Scan     		ETN85-O5O 12Sl-t 095t/R89 150eu PDF

    Untitled

    Abstract: No abstract text available
    Text: SP600 £15 HARRIS U U S E M I C O N D U C T O R Half-Bridge 500VDC Driver May 1992 Features Description • Maximum R a tin g . 500V The SP600 is a smart power high voltage integrated circuit HVIC optimized to drive MOS gated power devices in half­


    OCR Scan     		SP600 500VDC SP600 350ns AN-8829 PDF

    AN8829

    Abstract: A114M SP601
    Text: SP601 Semiconductor Features Half Bridge 500VDC Driver • Maximum Rating The SP601 is a sm art power high voltage integrated circuit HVIC optimized to drive MOS gated power devices in half­ bridge topologies. It provides the necessary control and management for PWM motor drive, power supply, and UPS


    OCR Scan     		SP601 500VDC SP601 350ns AN8829 A114M PDF

    PPAP level submission requirement table

    Abstract: PPAP MANUAL for automotive industry foundry metals quality MANUALS result of 200 prize bond INCOMING MATERIAL INSPECTION checklist, PCB TSMC 90nm sram SMD a006 ISO 9001 Sony foundry INCOMING MATERIAL INSPECTION procedure INCOMING RAW MATERIAL INSPECTION procedure
    Text: Contents Contents i Chapter 1 Quality Management 1.1 Quality Policy 1.2 Quality Organization 1.3 ISO 9001 Year 2000 Revision 1.4 Quality Systems 1.4.1 Process Map 1.4.2 Advanced Product Quality Planning 1.4.3 Quality Assurance in the Project Approval Stage


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SD2902 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 15 WATTS 28 VOLTS 12.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2902 is a gold metallized N-Channel MOS


    OCR Scan     		SD2902 SD2902 1010936C PDF

    secre

    Abstract: No abstract text available
    Text: SIEMENS FEA TU R ES • • • • • MCT6 DUAL PHOTOTRANSISTOR OPTOCOUPLER Package Dimensions in Inches mm Current Transfer Ratio, 20% Minimum Two Isolated Channels Per Package Withstand Text Voltage, 7500 V Underwriters Lab File #E52744 VDE #0884 Available with Option 1


    OCR Scan     		E52744 secre PDF

    51C69

    Abstract: 51C68-35L 51C68 2148H 10 35L 51C68-30 51C68-35 290091
    Text: 51C68 HIGH SPEED CHMOS 4096 x 4-BIT STATIC RAM 51C68-30 51C68-35 51C68-35L Max. Access Time ns 30 35 35 Max. Active Current (mA) 90 90 65 Max. Standby Current (mA) 10 10 5 Double Metal CHMOS III Technology High Density 20-Pin Package Completely Static Memory-No Clock


    OCR Scan     		51C68 51C68-30 51C68-35 51C68-35L 20-Pin 2148H 51C68 384-bit 51C69 51C68-35L 10 35L 290091 PDF

    IL223

    Abstract: IL221 IL222 RS481A
    Text: SIEMENS IL221/222/223 PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER FEATURES Package Dimensions in Inches mm • High Current Transfer Ratio*, lF=1 mA, IL221,100% Minimum 11232 200% Minimum IL223,500% Minimum • Withstand Test Voltage, 2500 VRMS


    OCR Scan     		IL221/222/223 IL221 IL223 RS481A) E52744 IL221/222/223 fl53b3Bb IL222 RS481A PDF

    37044

    Abstract: TIPL757
    Text: TEXAS INSTR ÌOPTO> b2 DF|ùTt.l75t. 0037043 2 8961726 TEXAS INSTR OPTO 62C 37043 TIPL757, TIPL757A N-P-N SILICON POWER TRANSISTORS REV ISED O CTOBER 1984 T - 33-/5“ 20 0 W a t 2 5 ° C C ase Temperature 15 A Continuous Collector Current 25 A Peak Collector Current


    OCR Scan     		TIPL757, TIPL757A TIPL757 TIPL757A 37044 TIPL757 PDF

    UFN153

    Abstract: UFN150
    Text: T2 UNITRODE CORP 9347963 UNITRODE CORP GQIQblfl 0 92D 10618 ^ T -^ -d POWER MOSFET TRANSISTORS UFN150 UFN152 UFN153 100 Volt, 0.055 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability


    OCR Scan     		UFN150 UFN152 UFN153 10b23 UFN151 UFN150 UFN153 PDF

    circuit diagram of 600 volt UPS

    Abstract: SP607 back UPS pro 1000 G2U TR
    Text: SP607 i f H A R R IS S E M I C O N D U C T O R Features Half Bridge 500VDC Driver • Maximum Rating The SP601 is a sm art power high voltage integrated circuit HVIC) optimized to drive MOS gated power devices in half­ bridge topologies. It provides the necessary control and


    OCR Scan     		SP607 500VDC SP601 1-800-4-HARRIS circuit diagram of 600 volt UPS SP607 back UPS pro 1000 G2U TR PDF

    elec-trol reed relay

    Abstract: ATQ203 RA30451051 DF2E-DC12V elec-trol RA30461051 RA30421241 RA30441051 ATQ203 relay data sheet 2sd 4242 ra30421051
    Text: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 12-132 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 133-239 3.6 EC SI Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240-253


    Original     		PDF

    DIODE IN 4002 424

    Abstract: transistor 2sk c954 2SK2541 TI 945 nec 501 t Transistor DF- RO
    Text: =t — • 5 > 2 / - h MOS Field Effect Transistor 2SK2541 n ^ - v t ^ u m o s ¡ ü iâ x - 'f > y ^ < f e t 7 ' m 2SK 2541IÌ 1.5 V l E t t ^ 'f 7 “<7 N 51 + ^^iÉ M O S FET?'<feU, f£ 1 Œ ?'![*»)?' t , *'0 K 7 ' f 7 f S ? f l t 3 *s' * ^ o jg h 7 > v


    OCR Scan     		2SK2541 2SK2541 DIODE IN 4002 424 transistor 2sk c954 TI 945 nec 501 t Transistor DF- RO PDF

    2SK2463

    Abstract: No abstract text available
    Text: Transistors Small switching 60V, 2A 2SK2463 •F e a tu re s 1) E x te rn a l d im e n s io n s (U nits: m m ) L o w o n -re sista n ce . 2) H ig h -s p e e d s w itc h in g . 3) W id e S O A (safe o p e ra tin g area). 4) L o w -v o lta g e d riv e (4V).


    OCR Scan     		2SK2463 O-220, 0Dlb713 O-220FN O220FP T0-220FP, O-220FP. 7020c 2SK2463 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Small switching 60V, 5A 2SK2503 •F e a tu re s External dimensions (Units: mm) 1) Low on-resistance. 2) High-speed switching. 2 3 + 0 .2 3) Wide SOA (safe operating area). 0 .5 ± 0 .1 4) Low-voltage drive (4V). 5) Easily designed drive circuits.


    OCR Scan     		2SK2503 SC-63 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. PDF

    DBK-H50

    Abstract: No abstract text available
    Text: C irN A v W I' ICorporation* A iA SEMICONDUCTOR PRODUCT SIGNAL PROCESSING EXCELLENCE QUALITY AND RELIABILITY ASSURANCE PROGRAM INTRODUCTION Sipex Corporation recognizes that the quality and reliability of our products are of primary importance to our customers. Sipex’s Quality


    OCR Scan     		f27August IL-I-38535, DBK-H50 PDF

    1000w 60hz power supply schematic

    Abstract: SORENSEN
    Text: •v#« - S f * ? •« PO\ PA30 A P E X M IC R O T E C H N O L O G Y C O R P O R A T IO N • A P P L IC A T IO N S H O T L IN E 8 0 0 5 4 6 -A P E X 8 0 0 -5 4 6 -2 7 3 9 FEATURES • • • • • • • OUTPUT POWER 2000W CONT, 8000W PULSE NO SECOND BREAKDOWN, MOSFET OUTPUT


    OCR Scan     		PDF

    tsmc cmos 0.13 um sram

    Abstract: TSMC 90nm sram ford ppap EMMI microscope TSMC 0.13um process specification PPAP MANUAL for automotive industry Kyocera mold compound semiconductors cross index ISO 9001 Sony foundry metals quality MANUALS
    Text: Integrated Silicon Solution Inc 2012 Q Quality y and Reliability Manual Contents Content Page Chapter 1 Quality Management 1.1 Quality Policy 1.2 Quality Organization 1.3 ISO 9001 Year 2008 Revision 1.4 Quality Systems 1.4.1 Process Map 1.4.2 Advanced Product Quality Planning


    Original     		PDF

    D3N02

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M DF3N02HD Medium Power Surface Mount Products M otorola Preferred D « vic * TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS RDS on = 0.090 OHM MiniMOS™ devices are an advanced series of power MOSFETs


    OCR Scan     		DF3N02HD DF3N02H D3N02 PDF

    of mosfet BUZ 384

    Abstract: simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn
    Text: SIEMENS Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 5 0 V . 1000 V und 10 m fi . 8 Q Power transistors in the 50 V to 1000 V and 10 mQ to 8 Q range


    OCR Scan     		SIL00001 SIL00002 MILSTD-883, of mosfet BUZ 384 simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn PDF