AN569
Abstract: D3N02 MMDF3N02HD MMDF3N02HDR2 SMD310
Text: MOTOROLA Order this document by MMDF3N02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMDF3N02HD Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors Motorola Preferred Device DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS
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MMDF3N02HD/D
MMDF3N02HD
MMDF3N02HD/D*
AN569
D3N02
MMDF3N02HD
MMDF3N02HDR2
SMD310
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D3N02
Abstract: MMDF3N02HD
Text: MMDF3N02HD Power MOSFET 3 Amps, 20 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF3N02HD
MMDF3N02HD/D
D3N02
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D3N02
Abstract: AN569 MMDF3N02HD MMDF3N02HDR2
Text: MMDF3N02HD Preferred Device Power MOSFET 3 Amps, 20 Volts N–Channel SO–8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF3N02HD
r14525
MMDF3N02HD/D
D3N02
AN569
MMDF3N02HD
MMDF3N02HDR2
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E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
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DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
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Untitled
Abstract: No abstract text available
Text: MMDF3N02HD Power MOSFET 3 Amps, 20 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF3N02HD
MMDF3N02HD/D
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D3N02
Abstract: AN569 MMDF3N02HD MMDF3N02HDR2 MMDF3N02HDR2G
Text: MMDF3N02HD Preferred Device Power MOSFET 3 Amps, 20 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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Original
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PDF
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MMDF3N02HD
MMDF3N02HD/D
D3N02
AN569
MMDF3N02HD
MMDF3N02HDR2
MMDF3N02HDR2G
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TRANSISTOR LWW 20
Abstract: TRANSISTOR LWW 17
Text: MMDF3N02HD Preferred Device Power MOSFET 3 Amps, 20 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the
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MMDF3N02HD
TRANSISTOR LWW 20
TRANSISTOR LWW 17
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D3N02
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M DF3N02HD Medium Power Surface Mount Products M otorola Preferred D « vic * TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS RDS on = 0.090 OHM MiniMOS™ devices are an advanced series of power MOSFETs
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OCR Scan
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DF3N02HD
DF3N02H
D3N02
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