Untitled
Abstract: No abstract text available
Text: SKYPER 32PRO R . Absolute Maximum Ratings Symbol Conditions ¥V&->5¥V&66>5d&' < '/0. $&) A')/7 9&/(,2. )35>,37 1-)'( 052-,/ 9&/(,2. E?52+G 1-)'( 052-,/ 9&/(,2. E_&%G ]'()'( ).,; *'33.-( ]'()'( ,9.3,2. *'33.-( >,DF 0%5(*+5-2 63.a'.-*7 H&//.*(&3 .>5(.3 9&/(,2. 0.-0. ,*3&00
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32PRO
Rev03
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A476
Abstract: 6937A
Text: & ' " ,F86ADB5F *8 7#A*9=A "#"A&$>&DF#$A(%#DFA(#FD+!+35 693?=7"A(+A %+>'$#A#/F#!!#D(A2379:8A&D$A!+6A3&(# F&%3#-A7#AF+0 !#0#D(&%5A693?=7"A0&5A1#A "#$ 'DA,E1%'$3#9A5D>#%(#%"A&D$A+(#%
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5A693?
123A718A
19AAAA52A
A7143
2333A7143
2AAAA7143
19AAA52A
A7143
A476
6937A
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DF fuse
Abstract: No abstract text available
Text: IB IL 24 PWR IN/2F-DF-2MBD Inline Power Terminal With Fuse and Diagnostics Data Sheet 6845A 6 3 9 4 A 0 0 1 09/2002 This data sheet is only valid in association with the "Configuring and Installing the INTERBUS Inline Product Range" User Manual IB IL SYS PRO UM E.
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TNR90
DF fuse
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Untitled
Abstract: No abstract text available
Text: 333 -8 PSMN9R0-30LL DF N3 N-channel DFN3333-8 30 V 9 mΩ logic level MOSFET Rev. 5 — 13 December 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power
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PSMN9R0-30LL
DFN3333-8
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LT3502A
Abstract: 1089
Text: DE M O CIR CU IT 1 08 9 Q U ICK S TA R LT3502A T G U IDE L T 3 5 02A 2.2M H z , 5 00m A , S te p -d o w n R e g u la to r in 2m m x 2m m DF N DESCRIPTION Demonstration circuit 1089 is a monolithic step-dow n DC/DC sw itching regulator featuring the LT3502A. The
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LT3502A
LT3502A.
LT3502A
150mA
400mA.
1089
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63d54
Abstract: 1e23
Text: Datas h eet 1 2333 4 4 567 8 9 69A B C D A 6E B F 69D F B D 68 A A A 69 DF D FB 3 6DDA69DABFB 6D 6 DF AD 12 ;2< +B9#368* D 6D7%3AD !" %
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7399D$
D6DA68B
122D-3
DA893(
7D55D$
7D5856B7
7D0487D$
7D638
6D774
63d54
1e23
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transistor 16933
Abstract: 16933 Transistor
Text: TOSHIBA {DISCRETE/OPTO} dF I tG ^ S O 99D 16932 9097250 TOSHIBA DISCRETE/OPTO Gült^E S ï~~ DT-?,9-l3 TOSHIBA FIELD EFFECT TRANSISTOR TOSHIBA SEMICONDUCTOR S 2 3 7 0 SILICON N CHANNEL MOS TYPE (7T-M0SI ) TECHNICAL DATA INDUSTRIAL APPLICATIONS _ Unit in aim
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030ii
100nA
300uA
transistor 16933
16933 Transistor
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OA 91 diode
Abstract: IRF220 IRF221 IRF222 5CH2 IRF223 8d050
Text: 7964142 SAMSUNG hfl DE I S E M ICONDUCTOR T T t i Ml MS □□□S Df l ' ì 0 5 0 8 9 _ d T - 3 ? 9 8 D I N C _ N-CHANNEL POWER MOSFETS 1 IRF220/221/222/223 FEATURES Low R d S o i i Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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IRF220/221/222/223
IRF220
IRF221
IRF222
IRF223
OA 91 diode
5CH2
8d050
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fld3c2pj
Abstract: FSX51 FLD5F6CX FMM362HE Fujitsu FLD5F6CX FLD148G3NL FRM5W231DR 382CG single frequency laser 1550 butterfly FMM381CG
Text: LIGHTWAVE COMPONENTS & M ODULES LASER DIODE MODULES OPTICAL AND ELECTRICAL CHARACTERISTICS TL = 25°C or Tc = 25°C Part Number Ith (mA) Vf (V) CW CW (typ) If = Pf Pth (mW) (mW) CW (min.) CW dF=lth) CW at Pf VDR=5V - 0.2 9* en •> 3.0 (lp=600 mA) o o o o
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14-pin
4001EH
4002EH
4004EK
622Mb/s
4005EK
fld3c2pj
FSX51
FLD5F6CX
FMM362HE
Fujitsu FLD5F6CX
FLD148G3NL
FRM5W231DR
382CG
single frequency laser 1550 butterfly
FMM381CG
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45215
Abstract: 452 rectifier 02DF 10MSA Diodes de redressement df 652
Text: y fast recovery rectifier diodes > 100 A diodes de redressement rapide > 100 A THOMSON-CSF Types •o Vrrm ■f s m 10 ms vF A <V) (A) (V) / if max (A) lR m a* / V rrm Q r mai; @ Tj max (mA) Case IfiC) lF = 50 A Tj = 125°C 270 A / T case = 9 5 °C DF 252
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-25A/Ms
45215
452 rectifier
02DF
10MSA
Diodes de redressement
df 652
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THT bsc 25
Abstract: n3av
Text: MOTOROLA SC -CLOGICJ- Tô 76367252 MOTOROLA SC LOGIC dF J b3b72SE 007^430 980 79438 fl D "p- 9 3 -2 / MC14001UB ( g ) Quad 2-Input NOR Gate MOTOROLA MC14002UB Dual 4-Input NOR Gate MC14011UB Quad 2-Input NAND Gate - . UB-SUFFIX SERIES CMOS GATES MC14012UB
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b3b72SE
MC14001UB
MC14002UB
MC14011UB
MC14012UB
THT bsc 25
n3av
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SN75069
Abstract: SN75068 S76266
Text: TEXAS INSTR ÌLI N/I NTF O 11 8961724 TEXAS IN STR dF | öTblVEM 00757^0 a | 91D 75798 L I N / INTFC D SN7506B, SN75069 QUADRUPLE HIGH-CURRENT DARLINGTON SWITCHES D 2 62 1, DE C EM B ER 1 9 7 9 - R E V IS E D FE B RU A RY 1987 NE DUAL-IN-LINE PACKAGE Output Collector Current. . . 1.5 A Max
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SN7506B,
SN75069
ULN2068
ULN2069
SN75068
S76266
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO}- TT 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA dF | t O T 75SG GDlbTSS T TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 99D 1 6 7 5 5 2 S IC 7 9 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0SI) T “ 3 <? “ I• •INDUSTRIAL APPLICATIONS
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300uA
EGA-2SK790-A
EGA-2SK790-5
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SS-3002
Abstract: SS300-2 SS3002 silicon diode load SILICON SENSORS Silicon Sensors, Inc
Text: 8253922 SILICON SENSORS INC SILICON SENSORS INC — i m ISII lisi ^ 75C 003^0 D7W/- dF 00D034Q 0 | ö 2S3T22 SILICON SENSORS, INC. Highw ay 1 8 East D odgeville, Wisconsin 5 3 5 3 3 Telephone: 6 0 8 9 3 5 -2 7 0 7 8253922 SILICON SENSORS INC SILICON SENSORS INC
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D7W/00D034Q
2S3T22
D000341
SS-300
SS-300
SS-3002
SS300-2
SS3002
silicon diode load
SILICON SENSORS
Silicon Sensors, Inc
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DKV6520B
Abstract: CKV2020-36 DKV6522D DKV6520 DKV6520A DKV6525 DKV6525A DKV6525B DKV6520C okv652
Text: 0585443 ALPHA IND/ SEMICONDUCTOR ALPHA IN»/ SEM ICON DU CT OR 03E 03 dF 00490 D T ~0_1 - 9 § 0 S û S4H3 □ ODQM'ï D fi | Hyperabrupt Tuning Varactors, DKV6520 Series Features • • • • High to Very High Frequency Operation Capacitance Values of 20 pF to 200 pF at 4 Volts
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a5fl5443
DKV6520
DKV6522
DKV6522A
DKV6522B
DKV6522C
DKV6522D
CKV2020-21
CKV2020-22
CKV2020-23
DKV6520B
CKV2020-36
DKV6520A
DKV6525
DKV6525A
DKV6525B
DKV6520C
okv652
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MLED94
Abstract: SILICON DICE motorola
Text: MOTOROLA SC ÍDIODES/OPTO} Ï4 DF|b3t,7ESS OOBfllhfl 7 | 1 i 8 3 6 7 2 5 5 M O T O R O L A SC CDIODES/OPTO 3^c 3 8 1 6 8 SILICON OPTOELECTRONIC DICE continued) D T - 41 -1 9 MLDC3 DIE NO. LINE SOURCE — DOL93 This die provides performance equal to or better than that
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DOL93
MLED60
MLED90
MLED92
MLED93
MLED94
MLED95
SILICON DICE motorola
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Untitled
Abstract: No abstract text available
Text: SPEC NO: 036-0152 PART NO: DPS150067U-P5-DF C U I STACK UNIT: mm PAGE NO: 1 of 4 DATE: Q1/11/9Î All information contained herein applies only to the above listed part number. Other versions of this part number with electrical or mechanical variations are available. Contact CUI Stack for further assistance. 9615 SW Allen Blvd., Ste. 103, Beaverton OR 97005
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DPS150067U-P5-DF
Q1/11/9Ã
Q1/11/9C
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Untitled
Abstract: No abstract text available
Text: N E C ELE CTR ON IC S INC 6 4 2 7 5 2 5 N E C E L E C T R O N I C S INC Tfl MOS dF | bi»57SaS OOITDHI S | ~ 9 8 D 19031 D j FIELD EFFECT TRANSISTOR ELECTRON DEVICE \ _ FAST SWITCHING P-CHANNEL S IL IC O N POWER 2J±a2 s.o±a 2 zi FET
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57SaS
CHASACTE21STICS
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zc826 IC
Abstract: No abstract text available
Text: PLESSEY S E M I C O N D / D I S C R E T E T S 7 2 20 5 33 PLESSEY dF | ? 2E0SB3 95D 0 4 9 8 4 S E M I C O N D / D I S C RE TE fl D i TABLE 4 : VARIABLE CAPACITANCE TUNER DIODES HYPEBABRUPTTYPEI ! i T-oi-n Hyperabrupt tuning diodes may be used in any electronic tuning system to replace conventional tuning
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ZC800,
ZC820
ZC830A
ZC800
perature-ZC800
ZC830
zc826 IC
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2SK790
Abstract: HSO16 2SK79 1SV35
Text: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A TT dF § T D T 725G O D l bTSS T J T O S H IB A D I S C R E T E /OPTO J T0SHIBA FIELD effect TRANSISTOR 2 S IC 7 9 0 99D 1 6 7 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE C7T-MOSI T-3'?-13 TECHNICAL DATA •INDUSTRIAL APPLICATIONS
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TDT725G
300uA
EGA-2SK790-A
EGA-2SK790-5
2SK790
HSO16
2SK79
1SV35
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IEC60825-1
Abstract: MAG45 MAG45 rj45 rj45 led mag marking code SAC
Text: I- DESCRIPTION REV PER EC OS13-0650-04 I7MAR2005 LV DF / A M A TE R IA L S: -H O U SING - TH E R M O PL A ST IC P ET P O L Y E S T E R F L A M M A B IL IT Y RATIN G UL 9 4 V -0 . -S H IE L D - .010" THICK, C26800 B R A S S P R E P L A T E D WITH 30jill\ICH MIN SE M I-BR IG H T
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C26800
MAG45
IEC60825-1
MAG45 rj45
rj45 led mag
marking code SAC
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mag45
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST AA 22 LTR DESCRIPTION A REV PER EC OS13 - 0 6 5 0 - 0 4 DATE DWN APVD 17M A R 2005 LV DF/CG M ATERIALS: -HOUSING - T H E R M O P L A S T I C P ET P O L Y E S T E R F L A M M A B I L I T Y R A T I N G UL 9 4 V - 0 .
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C26800
17MAR2005
17MAR2005
31MAR2000
mag45
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452 thyristor
Abstract: df diode 4120800 452 diode ESM thyristor ESM thyristor 270 ir 451 DF252 ESM diode esm diodes
Text: S G S -T H O M S O N 71C 0 | TTSTEB? Q aG 4c131 û THOMSON SEMICONDUCTORS fast recovery rectifier diodes ^ 1 0 0 A Types >o VRRM • fsm / Vf If Iß m ax / V r r m @ Tj m ax Q r max A (mA) (mC) 10 ms Case m ax (A ) (A ) (V) 250 A / T case = 8 0 °C (V )
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QaG4c131
125-C
di/dt--10
DF252
452 thyristor
df diode
4120800
452 diode
ESM thyristor
ESM thyristor 270
ir 451
ESM diode
esm diodes
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ESM thyristor
Abstract: thyristor disc Vrrm 20000 MDF656 esm 2000 thyristor disc Vrrm 2000 mu 86 452 thyristor sgs Thomson Thyristor DFB51 DF 652
Text: / = 7 SCS-THOMSON Ä 7# GENERAL PURPOSE & INDUSTRIAL RülDg|S@II!JCT8@liîOÔËS HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A M 771 M 779 b CB-479 CB-450 FAST RECOVERY RECTIFIER DIODES Type V RRM Tj max V <°C) (A) SV 11. F (R) SV 15. F (R) 800— 2000
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CB-486
DFB51
ESM thyristor
thyristor disc Vrrm 20000
MDF656
esm 2000
thyristor disc Vrrm 2000
mu 86
452 thyristor
sgs Thomson Thyristor
DF 652
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