Untitled
Abstract: No abstract text available
Text: BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code See 2 Table Below 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage
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BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
OT-23
BC856
BC857
BC858
BC859
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BC857
Abstract: No abstract text available
Text: BC856A/B-BC857A/B BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code See 2 Table Below 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage
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Original
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BC856A/B-BC857A/B
BC858A/B/C-BC859B/C
OT-23
BC856
BC857
BC858
BC859
BC857
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PDF
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BC pnp 200mA
Abstract: BC856 BC856A BC857 BC857A BC858 BC858A BC859 PNP -50V -200mA sot23 transistor BC SERIES
Text: BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code See 2 Table Below 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage
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Original
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BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
OT-23
BC856
BC857
BC858
BC859
BC pnp 200mA
BC856
BC856A
BC857
BC857A
BC858A
BC859
PNP -50V -200mA sot23
transistor BC SERIES
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Untitled
Abstract: No abstract text available
Text: BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon * “G” Lead Pb -Free COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code (See 2 Table Below) 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating
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Original
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BC856A/B-BC857A/B/C
BC858A/B/C-BC859B/C
OT-23
BC856
BC857
BC858
BC859
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PDF
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Marking Code 2X
Abstract: No abstract text available
Text: MMBT4401 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT4403 • ESD Capability: Machine Model, C (> 400 V) Human Body Model, 3B ( > 8 kV ) MECHANICAL DATA • Case: SOT-23 Plastic
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MMBT4401
MMBT4403)
OT-23
2002/95/EC
Marking Code 2X
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PDF
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Untitled
Abstract: No abstract text available
Text: NSR0320MW2T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. • Low Forward Voltage − 0.24 Volts Typ @ IF = 10 mAdc • High Current Capability • ESD Rating − Human Body Model: CLASS 3B
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NSR0320MW2T1
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PDF
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RBO08-40G
Abstract: RBO08-40T RBO08-40M VF13 aluminium plane heatsink
Text: RBO08-40G/M/T REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.
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RBO08-40G/M/T
RBO08-40G
PowerSO-10TM
RBO08-40M
RBO08-40G
RBO08-40T
RBO08-40M
VF13
aluminium plane heatsink
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PDF
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diode ir31
Abstract: TRANSIL RBO08-40G transil diode equivalent transistor marking code SGs IR31 RBO08-40M RBO08-40T VF13
Text: RBO08-40G/M/T REVERSEDBATTERYAND Application Specific Discretes A.S.D.TM OVERVOLTAGEPROTECTIONCIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.
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RBO08-40G/M/T
RBO08-40G
PowerSO-10TM
RBO08-40M
diode ir31
TRANSIL
RBO08-40G
transil diode equivalent
transistor marking code SGs
IR31
RBO08-40M
RBO08-40T
VF13
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PDF
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NSR0320MW2T1
Abstract: NSR0320MW2T1G NSR0320MW2T3G
Text: NSR0320MW2T1 Schottky Barrier Diodes These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features • Low Forward Voltage − 0.24 Volts Typ @ IF = 10 mAdc • High Current Capability • ESD Rating − Human Body Model: CLASS 3B
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NSR0320MW2T1
NSR0320MW2T1/D
NSR0320MW2T1
NSR0320MW2T1G
NSR0320MW2T3G
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PDF
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NSR0320MW2T1
Abstract: NSR0320MW2T1G NSR0320MW2T3G marking CODE A3
Text: NSR0320MW2T1 Schottky Barrier Diodes These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features • Low Forward Voltage − 0.24 Volts Typ @ IF = 10 mAdc • High Current Capability • ESD Rating − Human Body Model: CLASS 3B
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Original
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NSR0320MW2T1
NSR0320MW2T1/D
NSR0320MW2T1
NSR0320MW2T1G
NSR0320MW2T3G
marking CODE A3
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PDF
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Schottky MS SOD-323
Abstract: NSR0320MW2T1 NSR0320MW2T1G NSR0320MW2T3G
Text: NSR0320MW2T1 Schottky Barrier Diodes These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features •ăLow Forward Voltage - 0.24 Volts Typ @ IF = 10 mAdc •ăHigh Current Capability •ăESD Rating - Human Body Model: CLASS 3B
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NSR0320MW2T1
NSR0320MW2T1/D
Schottky MS SOD-323
NSR0320MW2T1
NSR0320MW2T1G
NSR0320MW2T3G
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Untitled
Abstract: No abstract text available
Text: SN74AUC02 QUADRUPLE 2-INPUT POSITIVE-NOR GATE www.ti.com SCES511A – NOVEMBER 2003 – REVISED MARCH 2005 FEATURES • VCC 1 14 2 13 4Y 3 12 4B 4 11 4A 5 6 10 3Y 9 3B 7 8 3A • • • • • 1A 1B 2Y 2A 2B 1Y • RGY PACKAGE TOP VIEW Optimized for 1.8-V Operation and Is 3.6-V I/O
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SN74AUC02
SCES511A
000-V
A114-A)
A115-A)
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Untitled
Abstract: No abstract text available
Text: SN54HC08, SN74HC08 QUADRUPLE 2-INPUT POSITIVE-AND GATES www.ti.com SCLS081F – DECEMBER 1982 – REVISED JANUARY 2007 FEATURES • • • Typical tpd = 8 ns ±4-mA Output Drive at 5 V Low Input Current of 1 µA Max 3 12 4 11 5 10 6 9 7 8 VCC 4B 4A 4Y 3B
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SN54HC08,
SN74HC08
SCLS081F
SN54HC04.
SN74HC04.
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PDF
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Untitled
Abstract: No abstract text available
Text: SN54HC08, SN74HC08 QUADRUPLE 2-INPUT POSITIVE-AND GATES www.ti.com SCLS081F – DECEMBER 1982 – REVISED JANUARY 2007 FEATURES • • • Typical tpd = 8 ns ±4-mA Output Drive at 5 V Low Input Current of 1 µA Max 3 12 4 11 5 10 6 9 7 8 VCC 4B 4A 4Y 3B
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Original
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SN54HC08,
SN74HC08
SCLS081F
SN54HC04.
SN74HC04.
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PDF
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ac32
Abstract: No abstract text available
Text: SN54AC32, SN74AC32 QUADRUPLE 2ĆINPUT POSITIVEĆOR GATES SCAS528D − AUGUST 1995 − REVISED OCTOBER 2003 D 2-V to 6-V VCC Operation D Inputs Accept Voltages to 6 V D Max tpd of 7.5 ns at 5 V 1 14 2 13 3 12 4 11 5 10 6 9 7 8 VCC 4B 4A 4Y 3B 3A 3Y 1Y NC 2A
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SN54AC32,
SN74AC32
SCAS528D
SN54AC32
SN74AC32
ac32
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PDF
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Untitled
Abstract: No abstract text available
Text: SN54AC11, SN74AC11 TRIPLE 3ĆINPUT POSITIVEĆAND GATES SCAS532D − AUGUST 1995 − REVISED OCTOBER 2003 D 2-V to 6-V VCC Operation D Inputs Accept Voltages to 6 V D Max tpd of 7.5 ns at 5 V 1 14 2 13 3 12 4 11 5 10 6 9 7 8 VCC 1C 1Y 3A 3B 3C 3Y 2A NC 2B NC
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SN54AC11,
SN74AC11
SCAS532D
SN54AC11
SN74AC11
SN74AC11N
SN74AC11D
SN74AC11DR
SN74AC11NSR
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PDF
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Untitled
Abstract: No abstract text available
Text: SN54HC08, SN74HC08 QUADRUPLE 2-INPUT POSITIVE-AND GATES www.ti.com SCLS081F – DECEMBER 1982 – REVISED JANUARY 2007 FEATURES • • • Typical tpd = 8 ns ±4-mA Output Drive at 5 V Low Input Current of 1 µA Max 3 12 4 11 5 10 6 9 7 8 VCC 4B 4A 4Y 3B
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Original
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SN54HC08,
SN74HC08
SCLS081F
SN54HC04.
SN74HC04.
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PDF
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HC08
Abstract: No abstract text available
Text: SN54HC08, SN74HC08 QUADRUPLE 2-INPUT POSITIVE-AND GATES www.ti.com SCLS081F – DECEMBER 1982 – REVISED JANUARY 2007 FEATURES • • • Typical tpd = 8 ns ±4-mA Output Drive at 5 V Low Input Current of 1 µA Max 3 12 4 11 5 10 6 9 7 8 VCC 4B 4A 4Y 3B
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Original
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SN54HC08,
SN74HC08
SCLS081F
SN54HC04.
SN74HC04.
HC08
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PDF
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Untitled
Abstract: No abstract text available
Text: SN54AC32, SN74AC32 QUADRUPLE 2ĆINPUT POSITIVEĆOR GATES SCAS528D − AUGUST 1995 − REVISED OCTOBER 2003 D 2-V to 6-V VCC Operation D Inputs Accept Voltages to 6 V D Max tpd of 7.5 ns at 5 V 1 14 2 13 3 12 4 11 5 10 6 9 7 8 VCC 4B 4A 4Y 3B 3A 3Y 1Y NC 2A
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Original
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SN54AC32,
SN74AC32
SCAS528D
SN54AC32
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PDF
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Untitled
Abstract: No abstract text available
Text: SN54AC32, SN74AC32 QUADRUPLE 2ĆINPUT POSITIVEĆOR GATES SCAS528D − AUGUST 1995 − REVISED OCTOBER 2003 D 2-V to 6-V VCC Operation D Inputs Accept Voltages to 6 V D Max tpd of 7.5 ns at 5 V 1 14 2 13 3 12 4 11 5 10 6 9 7 8 VCC 4B 4A 4Y 3B 3A 3Y 1Y NC 2A
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Original
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SN54AC32,
SN74AC32
SCAS528D
SN54AC32
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PDF
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2 G H z at collector currents from 0.5mA to 20mA E S P: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OCR Scan
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Q62702-F938
OT-23
IS21el2
IS21/S12I
0S35b05
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PDF
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GS 069 LF
Abstract: No abstract text available
Text: PD-9.913A International 3BR Rectifier IRF9Z34S/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z34S • Low-profile through-hole (IRF9Z34L) • 175°C Operating Temperature • Fast Switching • P- Channel • Fully Avalanche Rated
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OCR Scan
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IRF9Z34S)
IRF9Z34L)
GS 069 LF
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PDF
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Untitled
Abstract: No abstract text available
Text: I , I P D -9.131 OB International 3BR Rectifier IRF3710S/L p r e l im in a r y H E X F E T ^ P ow er M O S F E T • • • • • • Advanced Process Technology Surface Mount IRF3710S Low-profile through-hole (IRF3710L) 175°C Operating Temperature Fast Switching
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OCR Scan
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IRF3710S/L
IRF3710S)
IRF3710L)
4A554S2
0027TÃ
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PDF
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L3103L
Abstract: 0T1S IRF4905L
Text: PD-9.1478A International 3BR Rectifier IRF4905S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology S urface M ount IRF4905S Low -profile through-hole (IRF4905L) 175 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated
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OCR Scan
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IRF4905S)
IRF4905L)
IRF4905S/L
L3103L
0T1S
IRF4905L
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PDF
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