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    DEVICE MARKING CODE 3B Search Results

    DEVICE MARKING CODE 3B Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    DEVICE MARKING CODE 3B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code See 2 Table Below 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage


    Original     		PDF BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C OT-23 BC856 BC857 BC858 BC859

    BC857

    Abstract: No abstract text available
    Text: BC856A/B-BC857A/B BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code See 2 Table Below 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage


    Original     		PDF BC856A/B-BC857A/B BC858A/B/C-BC859B/C OT-23 BC856 BC857 BC858 BC859 BC857

    BC pnp 200mA

    Abstract: BC856 BC856A BC857 BC857A BC858 BC858A BC859 PNP -50V -200mA sot23 transistor BC SERIES
    Text: BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code See 2 Table Below 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage


    Original     		PDF BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C OT-23 BC856 BC857 BC858 BC859 BC pnp 200mA BC856 BC856A BC857 BC857A BC858A BC859 PNP -50V -200mA sot23 transistor BC SERIES

    Untitled

    Abstract: No abstract text available
    Text: BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon * “G” Lead Pb -Free COLLECTOR 3 MARKING DIAGRAM 3 3 1 1 BASE 2 SOT-23 XX = Device Code (See 2 Table Below) 1 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) Rating


    Original     		PDF BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C OT-23 BC856 BC857 BC858 BC859

    Marking Code 2X

    Abstract: No abstract text available
    Text: MMBT4401 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT4403 • ESD Capability: Machine Model, C (> 400 V) Human Body Model, 3B ( > 8 kV ) MECHANICAL DATA • Case: SOT-23 Plastic


    Original     		PDF MMBT4401 MMBT4403) OT-23 2002/95/EC Marking Code 2X

    Untitled

    Abstract: No abstract text available
    Text: NSR0320MW2T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. • Low Forward Voltage − 0.24 Volts Typ @ IF = 10 mAdc • High Current Capability • ESD Rating − Human Body Model: CLASS 3B


    Original     		PDF NSR0320MW2T1

    RBO08-40G

    Abstract: RBO08-40T RBO08-40M VF13 aluminium plane heatsink
    Text: RBO08-40G/M/T  REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.


    Original     		PDF RBO08-40G/M/T RBO08-40G PowerSO-10TM RBO08-40M RBO08-40G RBO08-40T RBO08-40M VF13 aluminium plane heatsink

    diode ir31

    Abstract: TRANSIL RBO08-40G transil diode equivalent transistor marking code SGs IR31 RBO08-40M RBO08-40T VF13
    Text: RBO08-40G/M/T  REVERSEDBATTERYAND Application Specific Discretes A.S.D.TM OVERVOLTAGEPROTECTIONCIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.


    Original     		PDF RBO08-40G/M/T RBO08-40G PowerSO-10TM RBO08-40M diode ir31 TRANSIL RBO08-40G transil diode equivalent transistor marking code SGs IR31 RBO08-40M RBO08-40T VF13

    NSR0320MW2T1

    Abstract: NSR0320MW2T1G NSR0320MW2T3G
    Text: NSR0320MW2T1 Schottky Barrier Diodes These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features • Low Forward Voltage − 0.24 Volts Typ @ IF = 10 mAdc • High Current Capability • ESD Rating − Human Body Model: CLASS 3B


    Original     		PDF NSR0320MW2T1 NSR0320MW2T1/D NSR0320MW2T1 NSR0320MW2T1G NSR0320MW2T3G

    NSR0320MW2T1

    Abstract: NSR0320MW2T1G NSR0320MW2T3G marking CODE A3
    Text: NSR0320MW2T1 Schottky Barrier Diodes These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features • Low Forward Voltage − 0.24 Volts Typ @ IF = 10 mAdc • High Current Capability • ESD Rating − Human Body Model: CLASS 3B


    Original     		PDF NSR0320MW2T1 NSR0320MW2T1/D NSR0320MW2T1 NSR0320MW2T1G NSR0320MW2T3G marking CODE A3

    Schottky MS SOD-323

    Abstract: NSR0320MW2T1 NSR0320MW2T1G NSR0320MW2T3G
    Text: NSR0320MW2T1 Schottky Barrier Diodes These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features •ăLow Forward Voltage - 0.24 Volts Typ @ IF = 10 mAdc •ăHigh Current Capability •ăESD Rating - Human Body Model: CLASS 3B


    Original     		PDF NSR0320MW2T1 NSR0320MW2T1/D Schottky MS SOD-323 NSR0320MW2T1 NSR0320MW2T1G NSR0320MW2T3G

    Untitled

    Abstract: No abstract text available
    Text: SN74AUC02 QUADRUPLE 2-INPUT POSITIVE-NOR GATE www.ti.com SCES511A – NOVEMBER 2003 – REVISED MARCH 2005 FEATURES • VCC 1 14 2 13 4Y 3 12 4B 4 11 4A 5 6 10 3Y 9 3B 7 8 3A • • • • • 1A 1B 2Y 2A 2B 1Y • RGY PACKAGE TOP VIEW Optimized for 1.8-V Operation and Is 3.6-V I/O


    Original     		PDF SN74AUC02 SCES511A 000-V A114-A) A115-A)

    Untitled

    Abstract: No abstract text available
    Text: SN54HC08, SN74HC08 QUADRUPLE 2-INPUT POSITIVE-AND GATES www.ti.com SCLS081F – DECEMBER 1982 – REVISED JANUARY 2007 FEATURES • • • Typical tpd = 8 ns ±4-mA Output Drive at 5 V Low Input Current of 1 µA Max 3 12 4 11 5 10 6 9 7 8 VCC 4B 4A 4Y 3B


    Original     		PDF SN54HC08, SN74HC08 SCLS081F SN54HC04. SN74HC04.

    Untitled

    Abstract: No abstract text available
    Text: SN54HC08, SN74HC08 QUADRUPLE 2-INPUT POSITIVE-AND GATES www.ti.com SCLS081F – DECEMBER 1982 – REVISED JANUARY 2007 FEATURES • • • Typical tpd = 8 ns ±4-mA Output Drive at 5 V Low Input Current of 1 µA Max 3 12 4 11 5 10 6 9 7 8 VCC 4B 4A 4Y 3B


    Original     		PDF SN54HC08, SN74HC08 SCLS081F SN54HC04. SN74HC04.

    ac32

    Abstract: No abstract text available
    Text: SN54AC32, SN74AC32 QUADRUPLE 2ĆINPUT POSITIVEĆOR GATES SCAS528D − AUGUST 1995 − REVISED OCTOBER 2003 D 2-V to 6-V VCC Operation D Inputs Accept Voltages to 6 V D Max tpd of 7.5 ns at 5 V 1 14 2 13 3 12 4 11 5 10 6 9 7 8 VCC 4B 4A 4Y 3B 3A 3Y 1Y NC 2A


    Original     		PDF SN54AC32, SN74AC32 SCAS528D SN54AC32 SN74AC32 ac32

    Untitled

    Abstract: No abstract text available
    Text: SN54AC11, SN74AC11 TRIPLE 3ĆINPUT POSITIVEĆAND GATES SCAS532D − AUGUST 1995 − REVISED OCTOBER 2003 D 2-V to 6-V VCC Operation D Inputs Accept Voltages to 6 V D Max tpd of 7.5 ns at 5 V 1 14 2 13 3 12 4 11 5 10 6 9 7 8 VCC 1C 1Y 3A 3B 3C 3Y 2A NC 2B NC


    Original     		PDF SN54AC11, SN74AC11 SCAS532D SN54AC11 SN74AC11 SN74AC11N SN74AC11D SN74AC11DR SN74AC11NSR

    Untitled

    Abstract: No abstract text available
    Text: SN54HC08, SN74HC08 QUADRUPLE 2-INPUT POSITIVE-AND GATES www.ti.com SCLS081F – DECEMBER 1982 – REVISED JANUARY 2007 FEATURES • • • Typical tpd = 8 ns ±4-mA Output Drive at 5 V Low Input Current of 1 µA Max 3 12 4 11 5 10 6 9 7 8 VCC 4B 4A 4Y 3B


    Original     		PDF SN54HC08, SN74HC08 SCLS081F SN54HC04. SN74HC04.

    HC08

    Abstract: No abstract text available
    Text: SN54HC08, SN74HC08 QUADRUPLE 2-INPUT POSITIVE-AND GATES www.ti.com SCLS081F – DECEMBER 1982 – REVISED JANUARY 2007 FEATURES • • • Typical tpd = 8 ns ±4-mA Output Drive at 5 V Low Input Current of 1 µA Max 3 12 4 11 5 10 6 9 7 8 VCC 4B 4A 4Y 3B


    Original     		PDF SN54HC08, SN74HC08 SCLS081F SN54HC04. SN74HC04. HC08

    Untitled

    Abstract: No abstract text available
    Text: SN54AC32, SN74AC32 QUADRUPLE 2ĆINPUT POSITIVEĆOR GATES SCAS528D − AUGUST 1995 − REVISED OCTOBER 2003 D 2-V to 6-V VCC Operation D Inputs Accept Voltages to 6 V D Max tpd of 7.5 ns at 5 V 1 14 2 13 3 12 4 11 5 10 6 9 7 8 VCC 4B 4A 4Y 3B 3A 3Y 1Y NC 2A


    Original     		PDF SN54AC32, SN74AC32 SCAS528D SN54AC32

    Untitled

    Abstract: No abstract text available
    Text: SN54AC32, SN74AC32 QUADRUPLE 2ĆINPUT POSITIVEĆOR GATES SCAS528D − AUGUST 1995 − REVISED OCTOBER 2003 D 2-V to 6-V VCC Operation D Inputs Accept Voltages to 6 V D Max tpd of 7.5 ns at 5 V 1 14 2 13 3 12 4 11 5 10 6 9 7 8 VCC 4B 4A 4Y 3B 3A 3Y 1Y NC 2A


    Original     		PDF SN54AC32, SN74AC32 SCAS528D SN54AC32

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2 G H z at collector currents from 0.5mA to 20mA E S P: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF Q62702-F938 OT-23 IS21el2 IS21/S12I 0S35b05

    GS 069 LF

    Abstract: No abstract text available
    Text: PD-9.913A International 3BR Rectifier IRF9Z34S/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z34S • Low-profile through-hole (IRF9Z34L) • 175°C Operating Temperature • Fast Switching • P- Channel • Fully Avalanche Rated


    OCR Scan     		PDF IRF9Z34S) IRF9Z34L) GS 069 LF

    Untitled

    Abstract: No abstract text available
    Text: I , I P D -9.131 OB International 3BR Rectifier IRF3710S/L p r e l im in a r y H E X F E T ^ P ow er M O S F E T • • • • • • Advanced Process Technology Surface Mount IRF3710S Low-profile through-hole (IRF3710L) 175°C Operating Temperature Fast Switching


    OCR Scan     		PDF IRF3710S/L IRF3710S) IRF3710L) 4A554S2 0027TÃ

    L3103L

    Abstract: 0T1S IRF4905L
    Text: PD-9.1478A International 3BR Rectifier IRF4905S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology S urface M ount IRF4905S Low -profile through-hole (IRF4905L) 175 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated


    OCR Scan     		PDF IRF4905S) IRF4905L) IRF4905S/L L3103L 0T1S IRF4905L