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    DESIGN A COMMON EMITTER AMPLIFIER WITH A VOLTAGE Search Results

    DESIGN A COMMON EMITTER AMPLIFIER WITH A VOLTAGE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation

    DESIGN A COMMON EMITTER AMPLIFIER WITH A VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • • • • • High Dynamic Range for AM and FM Integrated AGC for AM and FM High Intercept Point 3rd Order for FM FM Amplifier Adjustable to Various Cable Impedances High Intercept Point 2nd and 3rd Order for AM Low Noise Output Voltage


    Original     		PDF ATR4251 QFN24 4913Jâ

    Untitled

    Abstract: No abstract text available
    Text: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA


    Original     		PDF AT-41532 OT-323 SC-70) SC-70 OT-323) AT-41532 5965-6167E

    transistor TT 2146

    Abstract: AT-32032 AT-32032-BLK 32032
    Text: AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery


    Original     		PDF AT-32032 AT-32032 OT323 SC-70) OT-323 5965-6216E 5989-2644EN transistor TT 2146 AT-32032-BLK 32032

    603 transistor npn

    Abstract: NPN transistor Electronic ballast design a common emitter amplifier with a voltage transistor Electronic ballast electronic ballast with npn transistor dc Electronic Load transistor R1A DN-52 constant current electronic load electronic load
    Text: DN-52 Design Note Adjustable Electronic Load for Low Voltage DC Applications *Operates down to 2.5V by Bill Andreycak and John Wiggenhorn Testing power supply regulation over a specified output current range is greatly simplified with the use of an adjustable electronic load. Load current


    Original     		PDF DN-52 D44H11 0A/80V) O-220 E5301 603 transistor npn NPN transistor Electronic ballast design a common emitter amplifier with a voltage transistor Electronic ballast electronic ballast with npn transistor dc Electronic Load transistor R1A DN-52 constant current electronic load electronic load

    transistor TT 2146

    Abstract: AT-32032 AT-32032-BLK AT-32032-TR1 60668 transistor ajw 64256
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance at 2.7 V, 5 mA: 900 MHz: 1 dB NF, 15 dB GA


    Original     		PDF AT-32032 OT-323 SC-70) SC-70 OT-323) 5965-6216E transistor TT 2146 AT-32032 AT-32032-BLK AT-32032-TR1 60668 transistor ajw 64256

    SOT 23 AJW

    Abstract: transistor TT 3034 Resistors 2306 181 AT-32032 AT-41532 AT-41532-BLK S21E 41532 mount chip transistor 332
    Text: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA


    Original     		PDF AT-41532 OT-323 SC-70) 5965-6167E SOT 23 AJW transistor TT 3034 Resistors 2306 181 AT-32032 AT-41532 AT-41532-BLK S21E 41532 mount chip transistor 332

    TTA0001

    Abstract: 100W AUDIO ic AMPLIFIER 100-W TTC0001
    Text: TTA0001 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0001 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = －160 V min. • Complementary to TTC0001 • Recommended for 100-W high-fidelity audio frequency amplifier output


    Original     		PDF TTA0001 TTC0001 TTA0001 100W AUDIO ic AMPLIFIER 100-W TTC0001

    2SA1202

    Abstract: 2SC2882
    Text: 2SA1202 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1202 Power Amplifier Applications Voltage Amplifier Applications Unit: mm • Suitable for driver of 30 to 35 watts audio amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)


    Original     		PDF 2SA1202 2SC2882 2SA1202 2SC2882

    2SA1202

    Abstract: 2SC2882
    Text: 2SC2882 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2882 Power Amplifier Applications Voltage Amplifier Applications Unit: mm • Suitable for driver of 30 to 35 watts audio amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)


    Original     		PDF 2SC2882 2SA1202 2SA1202 2SC2882

    TTC0001

    Abstract: TTA0001 a1815 100-W power amplifier handbook
    Text: TTC0001 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0001 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = 160 V min • Complementary to TTA0001 • Recommended for 100-W high-fidelity audio frequency amplifier output


    Original     		PDF TTC0001 TTA0001 TTC0001 TTA0001 a1815 100-W power amplifier handbook

    A817A transistor

    Abstract: a817a 2SA817A 2SC1627A 2SA817A transistor
    Text: 2SA817A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA817A Driver-Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SC1627A. • Driver stage application of 30 to 35 watts amplifiers. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA817A 2SC1627A. O-92MOD A817A transistor a817a 2SA817A 2SC1627A 2SA817A transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SA1202 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1202 Power Amplifier Applications Voltage Amplifier Applications Unit: mm • Suitable for driver of 30 to 35 watts audio amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)


    Original     		PDF 2SA1202 2SC2882

    TTC0002

    Abstract: TTA0002 100-W 2-21F1A
    Text: TTC0002 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = 160 V min • Complementary to TTA0002 • Recommended for 100-W high-fidelity audio frequency amplifier output


    Original     		PDF TTC0002 TTA0002 TTC0002 TTA0002 100-W 2-21F1A

    TTA0002

    Abstract: TTC0002 100-W 2-21F1A
    Text: TTA0002 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 ○ Power Amplifier Applications Unit: mm • High collector voltage: VCEO = －160 V min • Complementary to TTC0002 • Recommended for 100-W high-fidelity audio frequency amplifier output


    Original     		PDF TTA0002 TTC0002 TTA0002 TTC0002 100-W 2-21F1A

    Toshiba transistor a1941

    Abstract: A1941 toshiba a1941 transistor a1941 A194 Toshiba transistor 2SC5198 Toshiba transistor A1941 base collector and emitter A1941 TRANSISTOR 2SA1941 equivalent 2sc5198
    Text: 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage.


    Original     		PDF 2SA1941 2SC5198 Toshiba transistor a1941 A1941 toshiba a1941 transistor a1941 A194 Toshiba transistor 2SC5198 Toshiba transistor A1941 base collector and emitter A1941 TRANSISTOR 2SA1941 equivalent 2sc5198

    A1805

    Abstract: 2SA1805 2SC4690
    Text: 2SA1805 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1805 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC4690 • Recommended for 70 W high fidelity audio frequency amplifier output


    Original     		PDF 2SA1805 2SC4690 A1805 2SA1805 2SC4690

    Toshiba transistor A1962

    Abstract: a1962 transistor a1962 TOSHIBA A1962 a1962 TOSHIBA 2SA1962 TOSHIBA 2SA1962 2SC5242
    Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.


    Original     		PDF 2SA1962 2SC5242 Toshiba transistor A1962 a1962 transistor a1962 TOSHIBA A1962 a1962 TOSHIBA 2SA1962 TOSHIBA 2SA1962 2SC5242

    Untitled

    Abstract: No abstract text available
    Text: 2SA1805 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1805 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC4690 • Recommended for 70 W high fidelity audio frequency amplifier output


    Original     		PDF 2SA1805 2SC4690 2-16F1A

    2-7D101A

    Abstract: 2SA1425 2SC3665 A1425
    Text: 2SA1425 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1425 Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SC3665. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SA1425 2SC3665. 2-7D101A 2SA1425 2SC3665 A1425

    transistor c1627a

    Abstract: c1627a transistor c1627a 2SA817A 2SC1627A
    Text: 2SC1627A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC1627A Driver-Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SA817A. • Driver-stage applications for 30- to 35-watt amplifiers. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC1627A 2SA817A. 35-watt O-92MOD transistor c1627a c1627a transistor c1627a 2SA817A 2SC1627A

    A817A transistor

    Abstract: a817a 2SA817A transistor a817a A817 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC1627A
    Text: 2SA817A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA817A Driver-Stage Amplifier Applications Voltage Amplifier Applications Unit: mm • Complementary to 2SC1627A. • Driver stage application of 30 to 35 watts amplifiers. Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SA817A 2SC1627A. O-92MOD A817A transistor a817a 2SA817A transistor a817a A817 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC1627A

    2-21F1A

    Abstract: 2SA1942 2SC5199
    Text: 2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1942 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V min • Complementary to 2SC5199 • Recommended for 80-W high-fidelity audio frequency amplifier output stage


    Original     		PDF 2SA1942 2SC5199 2-21F1A 2SA1942 2SC5199

    PJ 0349

    Abstract: PJ 2399 0709s
    Text: mUKM PA C K A R D W hot HEWLETT General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA


    OCR Scan     		PDF AT-41532 SC-70 OT-323) OT-323 SC-70) 1-800-Z35-031Z 5965-6167E PJ 0349 PJ 2399 0709s

    transistor bc 5588

    Abstract: BC 148 TRANSISTOR PIN CONFIGURATION transistor TT 2146 low noise transistor bc 234 transistor BC 575 INFORMATION OF IC 7424 transistor bc 658 1J Sot323
    Text: Who I HEWLETT mL'KM PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance at 2.7 V, 5 mA:


    OCR Scan     		PDF AT-32032 SC-70 OT-323) OT-323 SC-70) 5965-6216E transistor bc 5588 BC 148 TRANSISTOR PIN CONFIGURATION transistor TT 2146 low noise transistor bc 234 transistor BC 575 INFORMATION OF IC 7424 transistor bc 658 1J Sot323