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    DEPLETION-MODE POWER Search Results

    DEPLETION-MODE POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    DEPLETION-MODE POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DC DC converter 5v to 400V

    Abstract: 400V voltage regulator 400V to 12V DC Regulator RX5RA30AX smps 12v 400V to 5V DC Regulator 400v power supply depletion mode 400V DC circuits power control Automotive
    Text: DN25 Series Application Note AN-D18 3 Constant Current Sources and Depletion-Mode FETs Depletion-mode MOSFETs can be used either as “normally closed” switches or current sources. This note shows circuits, utilizing depletion mode devices, that will benefit many


    Original     		PDF AN-D18 DN2540N8 RX5RA30AX 150mA 800nA DN2540N3 DC DC converter 5v to 400V 400V voltage regulator 400V to 12V DC Regulator RX5RA30AX smps 12v 400V to 5V DC Regulator 400v power supply depletion mode 400V DC circuits power control Automotive

    depletion mode current limiter

    Abstract: depletion mode ramp generator 500V voltage regulator high impedance current sources -rs high voltage regulator piezo switches adjustable regulator high voltage LND150N8 LND150 LND150N3
    Text: LND1 Series Application Note AN-D16 Constant Current Sources and Depletion-Mode FETs Depletion-mode MOSFETs can be used either as “normally closed” switches or current sources. This note shows circuits, utilizing depletion mode devices, that will benefit many


    Original     		PDF AN-D16 LND150N3 RX5RA30AX AN-D10 AN-D12 LND150N8 VN0550N3 depletion mode current limiter depletion mode ramp generator 500V voltage regulator high impedance current sources -rs high voltage regulator piezo switches adjustable regulator high voltage LND150N8 LND150 LND150N3

    N-Channel Depletion-Mode MOSFET

    Abstract: P-Channel Depletion Mosfets DEPLETION MOSFET depletion mode fet depletion mode mosfet P-Channel Depletion-Mode mosfet depletion n-channel mosfet triggering depletion p mosfet n mosfet depletion
    Text: AN901 Depletion-Mode MOSFETs Expand Circuit Opportunities Ed Oxner and Richard Bonkowski Introduction A principal advantage of the depletion-mode MOSFET is its ability to perform at higher operating voltages than its JFET counterpart. As a depletion-mode structure, the


    Original     		PDF AN901 ND2012 ND2406 2N692) 21-Jun-94 N-Channel Depletion-Mode MOSFET P-Channel Depletion Mosfets DEPLETION MOSFET depletion mode fet depletion mode mosfet P-Channel Depletion-Mode mosfet depletion n-channel mosfet triggering depletion p mosfet n mosfet depletion

    P-Channel Depletion Mosfets

    Abstract: mosfet low idss mosfet depletion P-Channel Depletion-Mode depletion mode fet Depletion MOSFET N-Channel Depletion-Mode MOSFET depletion mode mosfet n-channel mosfet triggering N CHANNEL DEPLETION MOSFET
    Text: AN901 Depletion-Mode MOSFETs Expand Circuit Opportunities Introduction A principal advantage of the depletion-mode MOSFET is its ability to perform at higher operating voltages than its JFET counterpart. As a depletion-mode structure, the MOSFET permits the added flexibility of allowing the gate potential


    Original     		PDF AN901 ND2012 ND2406 2N692) 10-Mar-97 P-Channel Depletion Mosfets mosfet low idss mosfet depletion P-Channel Depletion-Mode depletion mode fet Depletion MOSFET N-Channel Depletion-Mode MOSFET depletion mode mosfet n-channel mosfet triggering N CHANNEL DEPLETION MOSFET

    Depletion

    Abstract: No abstract text available
    Text: FSA550 4PST Depletion Mode Isolation Switch Features Description • •       The FSA550 is a high-performance four-pole singlethrow 4PST normally closed Depletion-Mode isolation switch. The Depletion Mode technology allows the device to conduct signals when there is no VCC available


    Original     		PDF FSA550 FSA550 com/dwg/UC/UC012AC Depletion

    Untitled

    Abstract: No abstract text available
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of


    Original     		PDF DN3765 DSFP-DN3765 A103108

    r08 sot223

    Abstract: CPC5602
    Text: CPC5602 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Rating 350 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 350V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)


    Original     		PDF CPC5602 CPC5602 DS-CPC5602-R08 r08 sot223

    40822

    Abstract: No abstract text available
    Text: LND150 N-Channel Depletion-Mode DMOS FET General Description Features The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown Low power drive requirement


    Original     		PDF LND150 LND150 DSFP-LND150 B021110 40822

    DN3545N8-G

    Abstract: DN3545 DN3545N3 DN3545N3-G DN3545N8
    Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		PDF DN3545 O-243AA OT-89) DSFP-DN3545 A012207 DN3545N8-G DN3545 DN3545N3 DN3545N3-G DN3545N8

    mos fet marking k4

    Abstract: DN3765 DN3765K4-G 2L43 transistor MARKING K4
    Text: DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► This depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		PDF DN3765 O-252, DSFP-DN3765 NR101207 mos fet marking k4 DN3765 DN3765K4-G 2L43 transistor MARKING K4

    DN5SW

    Abstract: DN3535N8-G dn5s 125OC DN3535 marking code sot-89 AA
    Text: DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF DN3535 DSFP-DN3535 A103108 DN5SW DN3535N8-G dn5s 125OC DN3535 marking code sot-89 AA

    Untitled

    Abstract: No abstract text available
    Text: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.


    Original     		PDF DN2530 DN2530 DSFP-DN2530 A103108

    Untitled

    Abstract: No abstract text available
    Text: CPC5603 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)


    Original     		PDF CPC5603 OT-223 CPC5603 DS-CPC5603-R07

    DN5MW

    Abstract: DN3545 DN3545N3-G DN3545N8-G
    Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF DN3545 DSFP-DN3545 B051909 DN5MW DN3545 DN3545N3-G DN3545N8-G

    DN2624

    Abstract: DN2624N3
    Text: DN2624 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 240V 4.0Ω 600mA Order Number / Package TO-92 DN2624N3 Advanced DMOS Technology Features These low threshold depletion-mode (normally-on) transistors


    Original     		PDF DN2624 600mA DN2624N3 DN2624 DN2624N3

    b0742

    Abstract: *b0742 cpc5603
    Text: CPC5603 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Rating 415 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)


    Original     		PDF CPC5603 CPC5603 DS-CPC5603-R06 b0742 *b0742

    b0742

    Abstract: No abstract text available
    Text: CPC5602 N-Channel Depletion Mode FET INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Rating 350 Max On-Resistance - RDS on 14 Units V  Max Power 2.5 W Features • 350V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on)


    Original     		PDF CPC5602 OT-223 DS-CPC5602-R09 b0742

    TO252

    Abstract: No abstract text available
    Text: DN2470 DN2470 Initial Release N-Channel Depletion-Mode Vertical DMOS FET Features General Description This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a


    Original     		PDF DN2470 DN2470 A020606 O-252 DSFP-DN2470 TO252

    DN3535N8

    Abstract: 125OC DN3535 DN3535N8-G
    Text: DN3535 N-Channel Depletion-Mode Vertical DMOS FETs Features ► ► ► ► ► ► General Description This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF DN3535 Application30 O-243AA OT-89) DSFP-DN3535 A012307 DN3535N8 125OC DN3535 DN3535N8-G

    mos die

    Abstract: DN2624 DN2624N3 DN2624ND
    Text: DN2624 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 Die 240V 4.0Ω 600mA DN2624N3 DN2624ND Advanced DMOS Technology Features These low threshold depletion-mode (normally-on) transistors


    Original     		PDF DN2624 600mA DN2624N3 DN2624ND mos die DN2624 DN2624N3 DN2624ND

    e041

    Abstract: No abstract text available
    Text: Supertex inc. DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The Supertex DN2540 is a low threshold depletion mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


    Original     		PDF DN2540 DN2540 DSFP-DN2540 B041310 e041

    ultra FAST DMOS FET Switches

    Abstract: SD2100 depletion fet depletion mode fet SST2100 XSD2100 FAST DMOS FET Switches
    Text: N-Channel Depletion Mode Lateral DMOS FET CCIIOQIC CORPORATION \J SD2100/SST2100 FEATURES DESCRIPTION • Fast S w itching. toN 1.0ns ! . crss2 p f The SD2100/SST2100 is a depletion mode DMOS lateral FET


    OCR Scan     		PDF SD2100/SST2100 SD2100/SST2100 OT-143. SD2100 SST2100 OT-143 XSD2100 10OfiA 1A44322 000102b ultra FAST DMOS FET Switches depletion fet depletion mode fet FAST DMOS FET Switches

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Depletion-Mode 4-Channel DMOS FETArmy calocflc o CORPORATION SD5501 FEATURES DESCRIPTION • • • • The SD5501 is manufactured utilizing Calogic’s proprietary high speed, low capacitance DMOS process featuring an N-Channel depletion-mode design.


    OCR Scan     		PDF SD5501 SD5501 16-pin SD5501N XSD5501

    BST124

    Abstract: N-Channel depletion mos
    Text: PH IN 711005b □0t=7,ìS2 n b Philips Sem iconductors Product specification N-channel depletion mode vertical D-MOS transistors RQTi9d Q UICK REFERENCE DATA FEATURES SYMBOL • High-speed switching • No secondary breakdown. N-channel depletion mode vertical


    OCR Scan     		PDF 711005b BST124 O-126 PINNING-TO-126 MRC195 BST124 N-Channel depletion mos