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    DEPLETION TYPE MOSFET Search Results

    DEPLETION TYPE MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    DEPLETION TYPE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTD24P20

    Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10
    Text: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M


    Original     		PDF 02N50D-1M 01N100D-1M 02N50D 01N100D IXTD36P10-5B IXTD50P10-7B IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD24P20 depletion mode mosfet DEPLETION P-Channel Depletion Mosfet IXTH36P10 P-Channel Depletion Mosfets IXTH50P10

    3N200

    Abstract: No abstract text available
    Text: <zNe.w <Se,mL- Conductor ZPioducti, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 DUAL-GATE MOSFET N-CHANNEL — DEPLETION ^ 3N200 TYPE NUMBER u BVOSS 20 PORWAR D TRANSSOMJCTANCE ^PO DERATE


    Original     		PDF 3N200 3N200

    HMC591LP5

    Abstract: HMC980LP4E EVAL01-HMC980LP4E HMC637LP5 TP10 marking r3r4 HMC637LP5E eqn 1325 hmc870Lc5 HMC487LP5E
    Text: HMC980LP4E v01.0911 Typical Applications Features • Automatic Gate voltage adjustment No Calibration required Military & Space • Supply Voltage (5V to 16.5V) • Test Instrumentation • • Fiber Optic Modulator Driver Biasing Bias both Enhancement or Depletion type


    Original     		PDF HMC980LP4E CONTROLLERS375 HMC870LC5 HMC871LC5 HMC591LP5 HMC980LP4E EVAL01-HMC980LP4E HMC637LP5 TP10 marking r3r4 HMC637LP5E eqn 1325 hmc870Lc5 HMC487LP5E

    NTE221

    Abstract: depletion MOSFET riss
    Text: NTE221 MOSFET Dual Gate, N–Channel for VHF TV Receivers Applications Description: The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications.


    Original     		PDF NTE221 NTE221 depletion MOSFET riss

    Untitled

    Abstract: No abstract text available
    Text: HMC980LP4E v00.0611 Typical Applications Features • Automatic Gate voltage adjustment No Calibration required Military & Space • Supply Voltage (5V to 16.5V) • Test Instrumentation • • Fiber Optic Modulator Driver Biasing Bias both Enhancement or Depletion type


    Original     		PDF HMC980LP4E 16mm2

    BSD20

    Abstract: 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion
    Text: _ I l . bb53T31 0012=134 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - S S '- IS ' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type.


    OCR Scan     		PDF bb53T31 BSD20 BSD22 OT-143 bb53131 7Z90790 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion

    Untitled

    Abstract: No abstract text available
    Text: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 7Z90791

    BSD12

    Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor
    Text: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 7Z907 a03ST0t. BSD12 depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor

    Untitled

    Abstract: No abstract text available
    Text: DMCD N-Channel _ Depletion-Mode MOSFET in c o r p o r a te d DEVICE TYPE PACKAGE Single TO-72 TO-206AF • SD2100 Single Chip • Available as DMCD1CHP TYPICAL CHARACTERISTICS Depletion Mode - Drain Current & On-Reslstance vs. Gate-Source Cutoff Voltage


    OCR Scan     		PDF O-206AF) SD2100 -----10V.

    Depletion MOSFET

    Abstract: switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion
    Text: 711Gä2t> Q0b770ö 217 • P H I N BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon M OS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 Depletion MOSFET switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion

    Untitled

    Abstract: No abstract text available
    Text: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD22 OT-143

    BSD10

    Abstract: depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V
    Text: • . N AMER PHILIPS/DISCRETE - ft — — — — bbSB'iai Q01724&#39;5 S • E5E D BSD10 BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF G1724-S BSD10 BSD12 BSD10 T-35-25 7Z90790 -r90X depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V

    transistor BD 430

    Abstract: Depletion
    Text: _ II _ bbS3T31 O O I S ^ H 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - 3 S '- 2. S' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF bbS3T31 BSD20 BSD22 OT-143 transistor BD 430 Depletion

    Untitled

    Abstract: No abstract text available
    Text: — .1— N AUER PHILIPS/DISCRETE ^[,53^31 0D17S4&#39;5 S • BSD10 BSD12 ESE D T - Z S -Z S - MOSFET N-CHANNEL DEPLETION SW ITCHING TRAN SISTO RS Symmetrical insulated-gate silicon M O S field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF 0D17S4 BSD10 BSD12

    Untitled

    Abstract: No abstract text available
    Text: BlS S & VDDQ20 N-Channel _ Depletion-Mode MOSFET TYPE PACKAGE DEVICE Single TO-92 TO-226AA • ND2012L, ND2020L Single Chip • Available as VDDQ1CHP, VDDQ2CHP TYPICAL CHARACTERISTICS On-Reslstance & Drain Current vs. Gate-Source Cutoff Voltage


    OCR Scan     		PDF VDDQ20 O-226AA) ND2012L, ND2020L ND2020) VDDQ20 ND2012)

    Untitled

    Abstract: No abstract text available
    Text: BF965 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in plastic X-package with source and substrate interconnected, intended for VHF applications, such as VHF television tuners and professional communication


    OCR Scan     		PDF BF965

    dual-gate

    Abstract: BF966S
    Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF966S APPLICATIONS • UHF applications in television tuners and professional communications equipment. DESCRIPTION Depletion type field-eftect transistor in a plastic X-package


    OCR Scan     		PDF BF966S dual-gate BF966S

    dual-gate

    Abstract: No abstract text available
    Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF966S APPLICATIONS • UHF applications in television tuners and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package


    OCR Scan     		PDF BF966S dual-gate

    n mosfet depletion 600V

    Abstract: No abstract text available
    Text: SIPMOS N Channel MOSFET BSP 135 Preliminary Data • SIPMOS - depletion mode • Drain-source voltage • Continuous drain current Vfes = 600V I B = 0.100A • Drain-source on-resistance • Total power dissipation flDS on = 60Q P0 = 1,5W ( Type Marking Ordering code for


    OCR Scan     		PDF Q62702-S655 56tance 00A/f/s 00A//JS n mosfet depletion 600V

    BF960

    Abstract: transistor BF960 BF-960 dual-gate
    Text: Short-form product specification Philips Semiconductors Silicon N-channel dual-gate MOS-FET BF960 APPLICATIONS • UHF applications in television tuners and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package


    OCR Scan     		PDF BF960 SQT103) BF960 transistor BF960 BF-960 dual-gate

    TRANSISTOR mosfet BF998

    Abstract: BF998 depletion BF998 UCB343 dual gate mosfet
    Text: Philips Components D atasheet status Preliminary specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfel/Gis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor


    OCR Scan     		PDF BF998 OT143 MCB346 MCB345 TRANSISTOR mosfet BF998 BF998 depletion UCB343 dual gate mosfet

    BF960

    Abstract: transistor BF960
    Text: BF960 _ / SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r use in u.h.f. applications in television tuners and professional communication equipment.


    OCR Scan     		PDF BF960 BF960 transistor BF960

    Untitled

    Abstract: No abstract text available
    Text: BF966S _ J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.


    OCR Scan     		PDF BF966S bbS3331 003ST36

    BF981

    Abstract: Dual-Gate* bf981 BF981 philips bf981 TRANSISTOR dual-gate
    Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF981 APPLICATIONS • VHF applications such as VHF television tuners, FM tuners and professional communications equipment. H DESCRIPTION Depletion type field-effect transistor in a plastic X-package


    OCR Scan     		PDF BF981 BF981 Dual-Gate* bf981 BF981 philips bf981 TRANSISTOR dual-gate