DEPLETION TYPE MOSFET Search Results

DEPLETION TYPE MOSFET Result Highlights (5)

Part	Manufacturer	Description	Download
CO-059FTYPEMM-050	Amphenol Cables on Demand	Amphenol CO-059FTYPEMM-050 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 50 ft	Datasheet
CO-059FTYPEMM-006	Amphenol Cables on Demand	Amphenol CO-059FTYPEMM-006 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 6 ft	Datasheet
CO-059FTYPEMM-010	Amphenol Cables on Demand	Amphenol CO-059FTYPEMM-010 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 10 ft	Datasheet
CO-059FTYPEMM-025	Amphenol Cables on Demand	Amphenol CO-059FTYPEMM-025 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 25 ft	Datasheet
CO-059FTYPEMM-003	Amphenol Cables on Demand	Amphenol CO-059FTYPEMM-003 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 3 ft	Datasheet

DEPLETION TYPE MOSFET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXTD24P20 Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10 Text: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M	Original	02N50D-1M 01N100D-1M 02N50D 01N100D IXTD36P10-5B IXTD50P10-7B IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD24P20 depletion mode mosfet DEPLETION P-Channel Depletion Mosfet IXTH36P10 P-Channel Depletion Mosfets IXTH50P10	PDF
3N200 Abstract: No abstract text available Text: <zNe.w <Se,mL- Conductor ZPioducti, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 DUAL-GATE MOSFET N-CHANNEL — DEPLETION ^ 3N200 TYPE NUMBER u BVOSS 20 PORWAR D TRANSSOMJCTANCE ^PO DERATE	Original	3N200 3N200	PDF
HMC591LP5 Abstract: HMC980LP4E EVAL01-HMC980LP4E HMC637LP5 TP10 marking r3r4 HMC637LP5E eqn 1325 hmc870Lc5 HMC487LP5E Text: HMC980LP4E v01.0911 Typical Applications Features • Automatic Gate voltage adjustment No Calibration required Military & Space • Supply Voltage (5V to 16.5V) • Test Instrumentation • • Fiber Optic Modulator Driver Biasing Bias both Enhancement or Depletion type	Original	HMC980LP4E CONTROLLERS375 HMC870LC5 HMC871LC5 HMC591LP5 HMC980LP4E EVAL01-HMC980LP4E HMC637LP5 TP10 marking r3r4 HMC637LP5E eqn 1325 hmc870Lc5 HMC487LP5E	PDF
NTE221 Abstract: depletion MOSFET riss Text: NTE221 MOSFET Dual Gate, N–Channel for VHF TV Receivers Applications Description: The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications.	Original	NTE221 NTE221 depletion MOSFET riss	PDF
Untitled Abstract: No abstract text available Text: HMC980LP4E v00.0611 Typical Applications Features • Automatic Gate voltage adjustment No Calibration required Military & Space • Supply Voltage (5V to 16.5V) • Test Instrumentation • • Fiber Optic Modulator Driver Biasing Bias both Enhancement or Depletion type	Original	HMC980LP4E 16mm2	PDF
BSD20 Abstract: 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion Text: _ I l . bb53T31 0012=134 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - S S '- IS ' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type.	OCR Scan	bb53T31 BSD20 BSD22 OT-143 bb53131 7Z90790 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion	PDF
Untitled Abstract: No abstract text available Text: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.	OCR Scan	BSD12 7Z90791	PDF
BSD12 Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor Text: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.	OCR Scan	BSD12 7Z907 a03ST0t. BSD12 depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor	PDF
Untitled Abstract: No abstract text available Text: DMCD N-Channel _ Depletion-Mode MOSFET in c o r p o r a te d DEVICE TYPE PACKAGE Single TO-72 TO-206AF • SD2100 Single Chip • Available as DMCD1CHP TYPICAL CHARACTERISTICS Depletion Mode - Drain Current & On-Reslstance vs. Gate-Source Cutoff Voltage	OCR Scan	O-206AF) SD2100 -----10V.	PDF
Depletion MOSFET Abstract: switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion Text: 711Gä2t> Q0b770ö 217 • P H I N BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon M OS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.	OCR Scan	BSD12 Depletion MOSFET switching transistor 331 b771D n channel depletion MOSFET N-Channel Depletion-Mode MOSFET BSD12 free transistor gbs transistor convertor 5 V to -5 V Depletion	PDF
Untitled Abstract: No abstract text available Text: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.	OCR Scan	BSD22 OT-143	PDF
BSD10 Abstract: depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V Text: • . N AMER PHILIPS/DISCRETE - ft — — — — bbSB'iai Q01724'5 S • E5E D BSD10 BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.	OCR Scan	G1724-S BSD10 BSD12 BSD10 T-35-25 7Z90790 -r90X depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V	PDF
transistor BD 430 Abstract: Depletion Text: _ II _ bbS3T31 O O I S ^ H 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - 3 S '- 2. S' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.	OCR Scan	bbS3T31 BSD20 BSD22 OT-143 transistor BD 430 Depletion	PDF
Untitled Abstract: No abstract text available Text: — .1— N AUER PHILIPS/DISCRETE ^[,53^31 0D17S4'5 S • BSD10 BSD12 ESE D T - Z S -Z S - MOSFET N-CHANNEL DEPLETION SW ITCHING TRAN SISTO RS Symmetrical insulated-gate silicon M O S field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.	OCR Scan	0D17S4 BSD10 BSD12	PDF

Untitled Abstract: No abstract text available Text: BlS S & VDDQ20 N-Channel _ Depletion-Mode MOSFET TYPE PACKAGE DEVICE Single TO-92 TO-226AA • ND2012L, ND2020L Single Chip • Available as VDDQ1CHP, VDDQ2CHP TYPICAL CHARACTERISTICS On-Reslstance & Drain Current vs. Gate-Source Cutoff Voltage	OCR Scan	VDDQ20 O-226AA) ND2012L, ND2020L ND2020) VDDQ20 ND2012)	PDF
Untitled Abstract: No abstract text available Text: BF965 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in plastic X-package with source and substrate interconnected, intended for VHF applications, such as VHF television tuners and professional communication	OCR Scan	BF965	PDF
dual-gate Abstract: BF966S Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF966S APPLICATIONS • UHF applications in television tuners and professional communications equipment. DESCRIPTION Depletion type field-eftect transistor in a plastic X-package	OCR Scan	BF966S dual-gate BF966S	PDF
dual-gate Abstract: No abstract text available Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF966S APPLICATIONS • UHF applications in television tuners and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package	OCR Scan	BF966S dual-gate	PDF
n mosfet depletion 600V Abstract: No abstract text available Text: SIPMOS N Channel MOSFET BSP 135 Preliminary Data • SIPMOS - depletion mode • Drain-source voltage • Continuous drain current Vfes = 600V I B = 0.100A • Drain-source on-resistance • Total power dissipation flDS on = 60Q P0 = 1,5W ( Type Marking Ordering code for	OCR Scan	Q62702-S655 56tance 00A/f/s 00A//JS n mosfet depletion 600V	PDF
BF960 Abstract: transistor BF960 BF-960 dual-gate Text: Short-form product specification Philips Semiconductors Silicon N-channel dual-gate MOS-FET BF960 APPLICATIONS • UHF applications in television tuners and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package	OCR Scan	BF960 SQT103) BF960 transistor BF960 BF-960 dual-gate	PDF
TRANSISTOR mosfet BF998 Abstract: BF998 depletion BF998 UCB343 dual gate mosfet Text: Philips Components D atasheet status Preliminary specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfel/Gis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor	OCR Scan	BF998 OT143 MCB346 MCB345 TRANSISTOR mosfet BF998 BF998 depletion UCB343 dual gate mosfet	PDF
BF960 Abstract: transistor BF960 Text: BF960 _ / SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r use in u.h.f. applications in television tuners and professional communication equipment.	OCR Scan	BF960 BF960 transistor BF960	PDF
Untitled Abstract: No abstract text available Text: BF966S _ J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.	OCR Scan	BF966S bbS3331 003ST36	PDF
BF981 Abstract: Dual-Gate* bf981 BF981 philips bf981 TRANSISTOR dual-gate Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF981 APPLICATIONS • VHF applications such as VHF television tuners, FM tuners and professional communications equipment. H DESCRIPTION Depletion type field-effect transistor in a plastic X-package	OCR Scan	BF981 BF981 Dual-Gate* bf981 BF981 philips bf981 TRANSISTOR dual-gate	PDF

DEPLETION TYPE MOSFET Search Results

DEPLETION TYPE MOSFET Result Highlights (5)

DEPLETION TYPE MOSFET Datasheets Context Search

IXTD24P20

3N200

HMC591LP5

NTE221

Untitled

BSD20

Untitled

BSD12

Untitled

Depletion MOSFET

Untitled

BSD10

transistor BD 430

Untitled

Untitled

Untitled

dual-gate

dual-gate

n mosfet depletion 600V

BF960

TRANSISTOR mosfet BF998

BF960

Untitled

BF981