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    DEPLETION MODE MOSFET MHZ Search Results

    DEPLETION MODE MOSFET MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    DEPLETION MODE MOSFET MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max


    Original     		PDF NTE454 NTE454 20Vdc 30Vdc 200MHZ

    NTE454

    Abstract: 200MHZ VG15
    Text: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max


    Original     		PDF NTE454 NTE454 20Vdc 30Vdc 200MHZ 200MHZ VG15

    3n212

    Abstract: No abstract text available
    Text: 3N212 DUAL GATE MOSFET N-CHANNEL DEPLETION MODE DESCRIPTION: The ASI 3N212 is a Dual Gate Mosfet Designed for Low Noise Mixer Applications in VHF Receivers. FEATURES: • Integrated Gate Protection • High Conversion Gain PACKAGE STYLE TO-72 MAXIMUM RATINGS


    Original     		PDF 3N212 3N212

    2N3823 equivalent

    Abstract: 2N3822 2N3823 2n3821 2N3822 equivalent 2N3823 DATASHEET depletion mode mosfet 100 MHz 2N3822 JAN 2N3821 JAN
    Text: Technical Data 2N3821 JAN, JTX, JTXV 2N3822 JAN, JTX, JTXV 2N3823 JAN, JTX, JTXV MIL-PRF QPL DEVICES POWER MOSFET N CHANNEL DEPLETION MODE Processed per MIL-PRF-19500/375 MAXIMUM RATINGS Parameters / Test Conditions Gate-Source Voltage Drain-Source Voltage


    Original     		PDF 2N3821 2N3822 2N3823 MIL-PRF-19500/375 2N3821 2N3822 2N3823 2N3821, 2N382323 2N3823 equivalent 2N3822 equivalent 2N3823 DATASHEET depletion mode mosfet 100 MHz 2N3822 JAN 2N3821 JAN

    LND150N8 equivalent

    Abstract: depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.


    Original     		PDF LND150 O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA LND150N8 equivalent depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 1.6A 10Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000


    Original     		PDF IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 O-252 O-263 O-220) O-263 O-220 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V


    Original     		PDF IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 800mA O-252 O-263 O-220) O-263 O-220

    IXTP08N100D2

    Abstract: IXTA08N100D2 IXTY08N100D2 08N100 08n10 500VID ixtp08n100 T08N
    Text: Preliminary Technical Information IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 800mA 21Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V


    Original     		PDF IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 800mA O-252 O-263 O-220) O-263 O-220 IXTP08N100D2 IXTA08N100D2 IXTY08N100D2 08N100 08n10 500VID ixtp08n100 T08N

    08N50D

    Abstract: IXTY08N50D2
    Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 RDS(on) N-Channel = > ≤ 500V 800mA 4.6Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous


    Original     		PDF IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 800mA O-252 O-220) O-263 O-220 O-263 08N50D IXTY08N50D2

    IXTY1R6N50D2

    Abstract: IXTP1R6N50D2
    Text: Preliminary Technical Information IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 500V 1.6A 2.3Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous


    Original     		PDF IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 O-252 O-220) O-263 O-220 O-263 O-220AB IXTY1R6N50D2 IXTP1R6N50D2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 RDS(on) N-Channel = > ≤ 500V 1.6A 2.3Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous


    Original     		PDF IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 O-252 O-220) O-263 O-220 O-263 O-220Aea

    08N50D

    Abstract: ixty08n50d2 IXTP08N50D2
    Text: Preliminary Technical Information IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 500V 800mA 4.6Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous


    Original     		PDF IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 800mA O-252 O-220) O-263 O-220 O-263 08N50D ixty08n50d2 IXTP08N50D2

    IXTH6N50D2

    Abstract: IXTP6N50D2 IXTA6N50D2 6N50D2 IXTP6N50
    Text: Preliminary Technical Information IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 Depletion Mode MOSFET VDSX ID on = > ≤ RDS(on) 500V 6A 500mΩ Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous


    Original     		PDF IXTA6N50D2 IXTP6N50D2 IXTH6N50D2 O-263 O-220 O-247) O-263 O-247 O-220AB IXTH6N50D2 IXTP6N50D2 IXTA6N50D2 6N50D2 IXTP6N50

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTA1N170DHV IXTH1N170DHV Depletion Mode MOSFET VDSX ID on RDS(on) = >  1700V 1A 16  N-Channel TO-263HV (IXTA) G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25C to 150C 1700 V VDGX


    Original     		PDF IXTA1N170DHV IXTH1N170DHV O-263HV O-247HV 062in. 100ms 1N170D

    IXTH6N100D2

    Abstract: No abstract text available
    Text: Preliminary Technical Information Depletion Mode MOSFET VDSX ID on IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 = > ≤ RDS(on) 1000V 6A 2.2Ω Ω N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000 V Continuous


    Original     		PDF IXTA6N100D2 IXTP6N100D2 IXTH6N100D2 O-263 O-220AB O-220 O-247) O-263 O-247 IXTH6N100D2

    Untitled

    Abstract: No abstract text available
    Text: ir e s ft DMCD1 DIE N-Channel Depletion-Mode Lateral DMOS FETs The DMCD is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high operating frequency. This DMOS process effectively bridges the operating


    OCR Scan     		PDF SD2100

    BSD20

    Abstract: 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion
    Text: _ I l . bb53T31 0012=134 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - S S '- IS ' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type.


    OCR Scan     		PDF bb53T31 BSD20 BSD22 OT-143 bb53131 7Z90790 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion

    Untitled

    Abstract: No abstract text available
    Text: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 7Z90791

    BSD12

    Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor
    Text: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 7Z907 a03ST0t. BSD12 depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor

    Untitled

    Abstract: No abstract text available
    Text: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD22 OT-143

    BSD10

    Abstract: depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V
    Text: • . N AMER PHILIPS/DISCRETE - ft — — — — bbSB'iai Q01724'5 S • E5E D BSD10 BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF G1724-S BSD10 BSD12 BSD10 T-35-25 7Z90790 -r90X depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V

    sst2100

    Abstract: LPD-12
    Text: SILICONIX INC IflE D • 0254735 ODIMGOI 1 ■ SD/SST2100 SERIES C T ’S ilic o n ix J J f in c o rp o ra te d N-Channel Depletion-M ode Lateral DMOS FETs - T The SD/SST2100 Series is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high


    OCR Scan     		PDF SD/SST2100 OT-143 LPD-12 sst2100 LPD-12

    transistor BD 430

    Abstract: Depletion
    Text: _ II _ bbS3T31 O O I S ^ H 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - 3 S '- 2. S' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF bbS3T31 BSD20 BSD22 OT-143 transistor BD 430 Depletion

    Untitled

    Abstract: No abstract text available
    Text: — .1— N AUER PHILIPS/DISCRETE ^[,53^31 0D17S4'5 S • BSD10 BSD12 ESE D T - Z S -Z S - MOSFET N-CHANNEL DEPLETION SW ITCHING TRAN SISTO RS Symmetrical insulated-gate silicon M O S field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF 0D17S4 BSD10 BSD12