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    DE-01 GERMANIUM TRANSISTOR Search Results

    DE-01 GERMANIUM TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DE-01 GERMANIUM TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N158

    Abstract: germanium Power Transistor HD R 433 M MD-Z1 c 1031 hall effect transistor BCCMD Germanium power
    Text: ● MIL.S.19500/24D 18 March 1970 SUPERSEDING MI L-s.19500/24c 14 May 1963 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, POWER TYPE 2N 158 This specifimticm partmenls is mandatory nnd/lgcncics for use of the Department by .11 Ocof Dcfensc.


    Original     		PDF 19500/24D 19500/24c CCU51DERED 2N158 germanium Power Transistor HD R 433 M MD-Z1 c 1031 hall effect transistor BCCMD Germanium power

    germanium transistor pnp

    Abstract: GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c
    Text: M[l. -S-l9.il1 J@7B 196s 24 Il:tokr SUl, KrW;. DING MI1.,-S-l WiOO/25A 5 N<>vemlu.r 11359 ,(. MILITARY sEMIcoiwoucToR SPECIFICATION f3EvfcE, TRANSISTOR, PNP, TYPE 2N240 GERMANIUM, LOW-pOWER This Specification is mandatory [or use by all Departments and Agencies


    Original     		PDF WiOO/25A 2N240 uG-491A/U, MIL-S-19500/25B 15SUE. 10UAL germanium transistor pnp GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c

    19Sg

    Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
    Text: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.


    Original     		PDF MIL-S-19500/65B 19500/65A 2N388. UIL-S-19500165B 514AD 19Sg WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR

    Application Papers

    Abstract: No abstract text available
    Text: Databook.fxp 1/13/99 2:10 PM Page H-13 H-13 01/99 Titles of Device Application Papers Abstracts and complete text available from InterFET upon request JFET for Completely Depleted High Resistivity Silicon V. Radeka, P. Rehak, S. Rescia Brookhaven National


    Original     		PDF

    transistor C3866

    Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
    Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)


    Original     		PDF

    LM 3041

    Abstract: 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076
    Text: I . I .“~ . MILITARY SEMICONDUCTOR DEVICE, SPECIFICATION TRANSJSIT3R, TYPE NPN, GERMANIUM, POWSR ,. 2N326 This 5Pedification is mandatory for use by all Departments and Agencies of lhe Department of Defense. 1. sCOPE 1.1 transistor. 1 This specilic.l ion cover.


    Original     		PDF 2N326 5961-0021-s) LM 3041 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076

    2N539

    Abstract: 2N539A mil-std-750 3076 Germanium power
    Text: M IL -S-19500/38C 10 January 1969 SUPERSEDING MIL- S -19500/38B 31 January 1962 See 6 .3 . MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, POWER T V P R S 9.NR3Q A N n 2N 5SQ A This specification is mandatory for use by all Depart­


    OCR Scan     		PDF MIL-S-19500/38C MIL-S-19500/38B 2N539 2N539A mil-s-19500, 2N539A mil-std-750 3076 Germanium power

    AC128 transistor

    Abstract: bc649 BC646 AC188 ac187 BCS48 bc660 AC188 transistor transistor AC128 AC188 AC187
    Text: Transistors germanium low/medium power transistors Dwg. ref. O utline •b z -0 ?î book 1 parts 1 and 2 V CBO V V ceo (V) M axim um Ratings lCM IC(AV) (A ) (A) Ptot at 25PC (°C> <mW) Tj m in. at •c fT ty p . (m A i (MHz) 2.5 h FE max. Special Features


    OCR Scan     		PDF at25PC AC128 AC187 AC188 2N1303 2N1306 2N1307 2N1309 h--22-> crt6-25 AC128 transistor bc649 BC646 AC188 ac187 BCS48 bc660 AC188 transistor transistor AC128 AC188

    ST8034

    Abstract: ST8033 SL3015 NS1000 n BC420 2CY38 usaf521es071 NS1001 QD400-78 NS1862
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF 35Om0 TZ7503 NS1234 ST8065 25MSA ST8190 500m2 ST8191 ST8034 ST8033 SL3015 NS1000 n BC420 2CY38 usaf521es071 NS1001 QD400-78 NS1862

    2N1011

    Abstract: marking 67A
    Text: MIL-S-ì9500/ó7A EL 10 October i 960 SUPERSEDING MIL-T-19500/67(SigC) 22 January 1959 MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM, 50-WATT TYPE 2N1011 1; 1 Scope,- This specification covers the detail requirements for germanium, PNP, power transistors for use in compatible equipment circuits. (See 3.4 and 6.2 herein.)


    OCR Scan     		PDF MIL-S-19500/67A MIL-T-19500/67 50-WATT 2N1011 -65to 5961-AO78 2N1011 marking 67A

    AD166

    Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT


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    SA2713

    Abstract: BC411 55B0 2N1959 40218t ME2001 SDD821 2N1959A SA2739 TLO 64
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. 0 i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF AT400 AT401 250MSA AT402 AT403 AT404 250M5A 250MIA 15Om0 15Om0 SA2713 BC411 55B0 2N1959 40218t ME2001 SDD821 2N1959A SA2739 TLO 64

    SDT1000

    Abstract: mt1888 ST54 2n16 DT6104 Stc1094 1205t MHT8012 usaf520es070 usaf521es071
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 SDT1000 mt1888 ST54 2n16 DT6104 Stc1094 1205t MHT8012 usaf520es070 usaf521es071

    lm 7803

    Abstract: Mextram 504 Mextram 7E21 DEVICE SILICON TWIN TRANSISTOR
    Text: IEEE BCTM1.3 Explorations for High Performance SiGe-Heterojunction Bipolar Transistor Integration P. Deixler ', H.G.A. Huizing, J.J.T.M. Donkers, J.H. Klootwijk, D. Hartskeerl, W.B. de Boer ', R J. Havens, R. van der Toom, J.C.J. Paasschens, W.J. Kloosterman, J.G.M. van Berkum, D. Terpstra and J.W. Slotboom


    OCR Scan     		PDF

    BAV46

    Abstract: bat59 Pin connection of bk 1085 BAT39 BAT52 BAV72 BAT10 BAW96 BAV71 BAT50R
    Text: Microwave solid state mixer diodes M axim um Operating Frequency GHz Type No. book 1 part 8 Typical Noise Figure (dB) Typical Impedance 8.5 750 O perating Temperature Z if Drawing i'e fe re n c e O u tlin e <oc> (Í2) GERMANIUM POINT CONTACT 40 AAY34 - 5 5 t o +100


    OCR Scan     		PDF AAY34 S0D-42 BAT10 SAT11 BAT39 CV7762) BAT39A OD-42 BAT50R SO-26 BAV46 bat59 Pin connection of bk 1085 BAT39 BAT52 BAV72 BAW96 BAV71

    NS1000 n

    Abstract: ST8014 2CY38 usaf521es071 ST8034 AT395 NS1862 QD400-78 QD402-78 QD403-78
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF 2N3633/52 ME8101 TIX895 1300M5A 1500MS 2500M5 2N2446 2N2379 3000MIA 4000Mt NS1000 n ST8014 2CY38 usaf521es071 ST8034 AT395 NS1862 QD400-78 QD402-78 QD403-78

    MHT5002

    Abstract: ST 2N3053 D28A9 D11C211B20 DC5501 DC6112B MD20 MM4645 MT75 BFS86
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. t - 40°c * - 45°C H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 MHT5002 ST 2N3053 D28A9 D11C211B20 DC5501 DC6112B MD20 MM4645 MT75 BFS86

    NKT 275 transistor

    Abstract: 2N6135 MD14 package
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    2sa525

    Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF

    MA7805

    Abstract: 2N2307 2CY38 germanium low power 150mW ST8034 5E29 NS1862 sl RS40 QD401-78 QD402-78
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF Voff-200uV. NS8000 NS8003 OC740 Pt-500mW; BVCBO-12V; 50-1500KC. Voff-100uV; 0-50KC. MA7805 2N2307 2CY38 germanium low power 150mW ST8034 5E29 NS1862 sl RS40 QD401-78 QD402-78

    SFT308

    Abstract: SFT307 2N2625 2N2209 2N2928 7350-a GT123 2N2624 2N2626 65T1 PNP GE
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 SFT308 SFT307 2N2625 2N2209 2N2928 7350-a GT123 2N2624 2N2626 65T1 PNP GE

    NS1000 n

    Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 NS1000 n CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78

    BC138

    Abstract: 2N3520 ST8014 2CY38 BD117 OC74 2N3523 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF 12X084B 12X165 VCEO-15V hFE-30 ICBO-200mA PA-300mW; VCEO-55V; hFE-100 Pt-25W; VCB0-50V; BC138 2N3520 ST8014 2CY38 BD117 OC74 2N3523 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR

    NS662

    Abstract: L17D RT3500
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF