Untitled
Abstract: No abstract text available
Text: QSFCT2X3245 PRELIMINARY Ô 3.3 Volt CMOS 16-BÌt QS74FCT2X3245 Tranceiver FEATURES/BENEFITS • Pin and function compatible to the QSFCT2X245 • Available in 40-pin QVSOP • Undershoot clamp diodes on all inputs • Ground bounce controlled outputs • Low power QCMOS: 0.07 nW typ static
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QSFCT2X3245
QS74FCT2X3245
QSFCT2X245
40-pin
FCT2X3245
16-bit
2X3245
2X3245A
DD271B
DSL-00062-00
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TC518512A
Abstract: TC518512AF tc518512aft
Text: IN T E G R A T E D CIRCUIT T O S H IB A M O S DIG IT A L IN TEGR ATED CIRCUIT T C 5 1 8 5 1 2 A F / A F T / A T R - 70, - 8 0 TOSHIBA TE C H N IC A L 5 2 4 ,2 8 8 W O R D S x 8 DATA BIT C M O S SILICON GATE C M O S PSEUDO STATIC RAM TEN TA TIVE DESCRIPTION
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TC518512A
TC518512AF
TSOP32
35MAX
TC518512AFT
0027lbM
TC518512AF--
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Untitled
Abstract: No abstract text available
Text: 128K x 8 3.3V SYNCHRON OUS SRAM WITH ZBT AND PIPELINED OUTPUT PRELIMINARY IDT71V508 Integrated Device Technology, Inc. FEATURES: • • • • • • • 128Kx 8 memory configuration High speed -1 2 0 MHz 4.5 ns Clock-to-Data Access Registered Output
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IDT71V508
128Kx
44-lead
IDT71V508
576-bit
MO-061,
S5771
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HM5117400BS7
Abstract: HM5117400BS6
Text: HM5117400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-369A Z Rev. 1.0 Nov. 15, 1995 Description The Hitachi HM5117400B is a CMOS dynamic RAM organized 4,194,304 word x 4 bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117400B offers Fast Page Mode
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HM5117400B
304-word
ADE-203-369A
mW/550
mW/495
HM5117400BS/BLS
HM5117400BS7
HM5117400BS6
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