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    Text: TOSHIBA Discrete Semiconductors 2SK1362 Field Effect Transistor Unit in mm Silicon N Channel MOSType rc-MOS II 15.8 ± 0.5 — 0 3.6 ±0.2 - High Speed, High Current Switching Applications Features • High Breakdown Voltage ' V (B R )D S S = 9 0 0 V


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    PDF 2SK1362 DD21bl3