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    Abstract: No abstract text available
    Text: 8M 1M x 8 Flash Memory • High-Density Symmetrically Blocked Architecture - Sixteen 64K Blocks • Extended Cycling Capability - 100,000 Block Erase Cycles - 1.6 Million Block Erase Cycles per Chip • Automated Byte Write and Block Erase - Command User Interface


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    PDF 44-Lead 40-Lead LH28F008SA DD1SS63 LH28F008SA