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    Abstract: No abstract text available
    Text: Broadband Power GaAs Chips Specifications T ^ = 25°C CF003-01 CF005-01 CF010-01 Ion Implanted Ion Implanted Ion Implanted Active Layer Frequency (GHz) Units Linear Power Gain Vqs = 6.0 V, Iq 3 = 80 mA Vqs = 6-0 V, Iqs = 160 mA VDS = 6.0 V, lDS = 300 mA


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    PDF CF003-01 CF005-01 CF010-01 mA00mA DD0D712