ECG1011
Abstract: Philips ECG g1009 KF 520 MTVA0100N05W3 ECG1009 ECG1010 6k8k
Text: LbSBTEÔ DD0373M 0 17E D PHILIPS E C G INC EC G 1009 1W AUDIO POW ER AM PLIFIER ECG1010 2W AUDIO POW ER AM PLIFIER sem iconductors ECG1011 3W AUDIO POW ER AM PLIFIER Dimensions In Mllllm«t«rs ECG1009 Ta=25°C Absolute Maximum Ratings V 16 Vcc max Maximum Supply Voltage
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G1009
ECG1010
ECG1011
T-74-05-01
ECG1009
100mmx
Philips ECG
KF 520
MTVA0100N05W3
ECG1009
6k8k
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DUP1
Abstract: No abstract text available
Text: FIJCRON TECHNOLOGY INC MICRON SSE T> • blllSMT DD037M3 DT4 ■ URN M T56C 2818 8 K x 18, DUAL 4 K x 18 C A CH E DATA SRAM ■ - ; CACHE DATA -0 4 - q q a i i
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DD037M3
8Kx18
66MHz
b00D37S2
DUP1
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Untitled
Abstract: No abstract text available
Text: SIE D • Ö13bb71 DD037S2 b37 « S E K G SEMIKRON SEMIKRON INC Maximum Ratings VcEVsus lc = 1 A ,V be = - 2 V V V V V A 300 150 8 1000 - 4 0 . . . + 150 - 4 0 . . . + 125 2500- A A A W °C °C V o II O D. C. tp = 1 ms Ib Tease —25 °C Ptot Tvj Tstg Visol
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13bb71
DD037S2
T-33-35
l3bb71
QQD37SS
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ECG1011
Abstract: ECG1010 KF10 ecg1009
Text: 17E D PHILIPS E C G INC • btiSBTHfi DD0373M 0 ECG 1009 1W A U D IO P O W E R A M P L IF IE R ECG 1010 2 W A U D IO PO W E R A M P L IF IE R semiconductors ECG1011 3W A U D IO P O W E R A M P L IF IE R Dimensions In Millimeters ECG1009 Ta=25°C Vcc RL 11
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DD0373M
ECG1011
ECG1009
100mmx
330ohm
70x70mm2
ECG1009
ECG1010
ECG1011
KF10
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 D • 0504330 DD037S3 t> ■ î-91-01 P R O C E S S NJ16 Process NJ16 N-Channel Junction Field-Effect Transistor Process NJ16 is an N-channel junction fieid-effect transistor designed for low-current, general-purpose applications. This process is particularly useful in
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DD037S3
50433A
T-91-01
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A1396
Abstract: No abstract text available
Text: ALLE6R0 MICROSYSTEMS INC T3D 1> • 05D433Ö DD03743 3 ■ ALGR PROCESS YCA Process YCA NPN Small-Signal Transistor Process Y C A is a double-diffused epitaxial planar N PN silicon transistor designed for use in generalpurpose switching and amplifier circuits. It can oper
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05G433A
1000mA
00090sa
A1396
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ke721k03
Abstract: KE721203 KE524505 KE7245A1 KED245A1 KE524575 KE524510 KE724502 KE924503 KE921205
Text: POÜJEREX INC m u D B w • DD037M3 5 M P R X Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 41.14.14
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DD037M3
BP107
KE724501
ke721k03
KE721203
KE524505
KE7245A1
KED245A1
KE524575
KE524510
KE724502
KE924503
KE921205
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Untitled
Abstract: No abstract text available
Text: H Y 6 2 8 1 0 0 A -I •HYUNDAI S e r ie s 128KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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128KX
HY628100A-I
1DD03-11-MAY94
0Q037hD
HY628100ALP-I
HY628100ALLP-I
HY628100ALG-I
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NJM2058
Abstract: DDD3733 HJH205BM NJM2058V NJM4558
Text: QUAD OPERATIONAL AMPLIFIER NJM2058 T he NJM2058 integrated circuit is a quad high-gain operational am plifier internally com pensated and constructed on a single silicon chip using an advanced epitaxial process. Each amplifier o f th e NJM2058 has the same electrical characteristics of the NJM4558.
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NJM2058
NJM2058
NJM4558.
700mW
300mW
DDD3733
HJH205BM
NJM2058V
NJM4558
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Untitled
Abstract: No abstract text available
Text: GENNUM C O R P O R A T I O G X 434 Monolithic 4x1 Video Multiplexer N DATA SHEET FEATURES CIRCUIT DESCRIPTION • low differential gain: 0.03% typ. at 4.43 MHz The GX434 is a high performance low cost monolithic 4x1 video multiplexer incorporating four bipolar switches with a
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GX434
3T357Ã
D0037b5
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Untitled
Abstract: No abstract text available
Text: IBM11D1365E IBM11D2365E 1M/2M x 36 DRAM Module Features 72-Pin Single-In-Line Memory Module Performance: -60 High Performance C M O S process Single 5V, ± 0.5V Power Supply All inputs & outputs are fully TTL & C M O S compatible Low active current dissipation
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IBM11D1365E
IBM11D2365E
72-Pin
1104ns
124ns|
Q0D37
DD0373Ô
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PDF
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Untitled
Abstract: No abstract text available
Text: OPERATIONAL AMPLIFIER NJM741 T he NJM741 is a high perform ance M onolithic O perational A m plifier constructed using the New JR C Planar epitaxial process. It is intended for a wide range of analog applications. High com m on m ode voltage range and absence of latch-up
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NJM741
NJM741
500mW
DD0375G
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Untitled
Abstract: No abstract text available
Text: P F 7 8 0 -0 2 EPSON SEDI 752 Series High Duty LCD Driver • Suitable for Color STN-LCD • 240 Output Segment Driver • Super Slim TCP • DESCRIPTION SED1752 is a 240 output segment column LCD driver suitable for driving of colored STN dot-matrix LCD panels
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SED1752
SED1743
SED1753.
DD03738
SED1752
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cd 4069 pin data
Abstract: 82C43 CI 4069 cjne MSM80C31F MSM80C31 MSM80C51F *82c43 80C31F
Text: O K I SEMICONDUCTOR GROUP IDE D | t.754S4D Q003b78 7 | C 5 1 1 C .1 I s e m i c o n c a y c t o r M S M 8 0 C 3 1 F /M S M 8 0 C 5 1 F -t - w - h - p i - n '- * - * ! CMOS SINGLE-COMPONENT 8 -BIT MICROCONTROLLER GENERAL DESCRIPTION The OKI M SM 80C31F/M SM 80C51F m icrocontroller is a low power, high performance 8-bit single
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Q003b78
-r-w-11-01
MSiVI80C31
F/MSM80C51F
MSM80C31F/MSM80C51F
MSM80C51F
16-bit
cd 4069 pin data
82C43
CI 4069
cjne
MSM80C31F
MSM80C31
*82c43
80C31F
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Untitled
Abstract: No abstract text available
Text: ALLEGRO MICROSYSTEMS INC T3 D • 05QM33Ö Ü003723 Ö ■ T -9 1-0 1 PR O CESS SRB Process SRB PNP Darlington Transistor Process S R B is a double-diffused silicon epitaxial P N P Darlington pair. This device is designed for use as a high-gain amplifier in audio and control circuits
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Q50M33Ã
T-91-01
T-91-01
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HY628100
Abstract: No abstract text available
Text: HY 628100 S e rie s •HYUNDAI 128KX 8-bit CMOS SRAM DESCRIPTION The HY628100 is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY628100
128Kx
85/100/120ns
1DD01-11-MAY94
ML750Ã
GD0373b
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PDF
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Untitled
Abstract: No abstract text available
Text: PHILIPS E C INC G 17E D bbSBTSñ ECG1004 T -7 7 -0 7 -0 5 n TV AUTOMATIC FREQUENCY TUNING semiconductors k m □ f ? F u n c tio n s of w id e ban d am p lifier, 2 p h a s e d e te c t o r a nd d i f f e r e n tia l DC a m plifier. 3 5 6 7 .6 2 * » * * M axim um R » t in g s /T a = 2 5 ‘C
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ECG1004
50kHz
ECQ1004
0D03717
DD0371Ö
001/z
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sed1672f
Abstract: No abstract text available
Text: EPSON PF838-02 SEDI 672 Dot Matrix High Duty LCD Driver • 68 Output • 1/64 to 1/300 in display duty • CMOS High Voltage Resistant Process • OVERVIEW The SED1672 is a 68 output low-power resistance common row driver which is suitable for driving a very high
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PF838-02
SED1672
SED1606
33b4134
Q37E4
G-223
G-224
sed1672f
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PDF
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Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC V53C8258H ULTRA-HIGH SPEED, 2 5 6K X 8B IT PAGE MODE WITH EXTENDED DATA OUTPUT EDO CMOS DYNAMIC RAM HIGH PERFORMANCE PRELIMINARY 35 40 45 50 Max. RAS Access Time, (tRAC) 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tCAA)
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V53C8258H
24-pin
26/24-pin
oj018
DD0375B
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PDF
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Untitled
Abstract: No abstract text available
Text: & C I A T O - " S b S IS b l 0DD37S1 ADS-946 2 Tb • 14-Bit, 8MHz Sampling A/D Converters INNOVATION and EXCELLENCE FEATURES • • • • • • • • • • 14-bit resolution 8MHz guaranteed sampling rate No missing codes over full military temperature range
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0DD37S1
ADS-946
14-Bit,
14-bit
-75dB)
24-pin,
MIL-STD-883
ADS-946
DS-0314
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PDF
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Untitled
Abstract: No abstract text available
Text: fINTERNATIONAL RB151 S e m ic o n d u c to r , I n c . thru RB157 M INIATURE SINGLE PHASE BRIDGE RECTIFIER VOLTAGE: 50 to 1000 Volts CURRENT: 1.5 Amperes FEATURES: .35 8 Max 9 . 1 D ia Plastic m aterial used carries U nderw riters Laboratory recognition 94 V -0
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RB151
RB157
IL-STD-202,
M37fl
RB151
RB157
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PDF
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Untitled
Abstract: No abstract text available
Text: 4TE J> TAIWAN LITON ELECTRONIC • &&35h^5 0003?bl S3b LTS-360 SERIES LITEM Î ITLIT 0.36" SINGLE D IG IT NUMERIC DISPLAYS FEATURES • 0 .3 6 IN C H 9 .2 0 m m D IG IT H E IG H T . • C O N T IN U O U S U N IF O R M S E G M E N T S . • C H O IC E O F F IV E B R IG H T C O L O R S -R E D /B R IG H T
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LTS-360
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11D1360Q IBM11E1360Q IBM11D2360Q IBM11E2360Q 1M/2M x 36 DRAM Module Features • 72-Pin Single-In-Line Memory Module • Performance: -60 -70 : W c ; RAS Access Time 60ns 70ns I tcAC i CAS Access Time 15ns 20ns 30ns 35ns j Iaa !Access Time From Address
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IBM11D1360Q
IBM11E1360Q
IBM11D2360Q
IBM11E2360Q
72-Pin
110ns
130ns
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PDF
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6DI15S-050
Abstract: M106 M115 M210 6DI20MS-050 1di200 1di400
Text: BIPOLAR TRANSISTO R M O D U LES Ratings and Specifications 3 H igh-speed sw itch in g 1400 volts class p o w e r tran sisto r m odules • S uited fo r m o to r control ap p licatio n s w ith 5 7 5V A C input. • P o w er transistors and fre e w h e e ls are built into o ne package.
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125rC)
2DI50Z
2DI7RZ-140
2DI100Z
2DI1507
1DI300Z
6DI10MS-050
6DI15S
6DI15MS-050
6DI20MS-050
6DI15S-050
M106
M115
M210
1di200
1di400
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PDF
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