M14C04
Abstract: No abstract text available
Text: M14C04 DD M14C04 Die Description PRODUCT • WAFER SIZE M14C04 152 mm 6 inches ■ DIE IDENTIFICATION M14C04KA_R ■ DIE SIZE (X x Y) 1465 x 1585 µm ■ SCRIBE LINE 101.6 x 101.6 µm ■ PAD OPENING 100 x 100 µm DIE LAYOUT DI Die Identification (at the position shown in Figure 1)
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M14C04
M14C04
M14C04KA
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M14C32
Abstract: 99344
Text: M14C32 DD M14C32 Die Description PRODUCT • WAFER SIZE M14C32 152 mm 6 inches ■ DIE IDENTIFICATION M14C32KA_R ■ DIE SIZE (X x Y) 2040 x 2355 µm ■ SCRIBE LINE 100.5 x 101.7 µm ■ PAD OPENING 100 x 100 µm DIE LAYOUT DI Die Identification (at the position shown in Figure 1)
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M14C32
M14C32
M14C32KA
99344
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M14C32
Abstract: No abstract text available
Text: M14C32 DD M14C32 Die Description PRODUCT • WAFER SIZE M14C32 152 mm 6 inches ■ DIE IDENTIFICATION M14C32KA_R ■ DIE SIZE (X x Y) 2040 x 2355 µm ■ SCRIBE LINE 100.5 x 101.7 µm ■ PAD OPENING 100 x 100 µm DIE LAYOUT DI Die Identification (at the position shown in Figure 1)
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M14C32
M14C32
M14C32KA
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M14C16
Abstract: X2375
Text: M14C16 DD M14C16 Die Description PRODUCT • WAFER SIZE M14C16 152 mm 6 inches ■ DIE IDENTIFICATION M14C16KA_R ■ DIE SIZE (X x Y) 1390 x 2375 µm ■ SCRIBE LINE 101.8 x 102.4 µm ■ PAD OPENING 100 x 100 µm DIE LAYOUT DI ■ Die Identification (at the position shown in Figure 1)
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M14C16
M14C16
M14C16KA
X2375
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Untitled
Abstract: No abstract text available
Text: HVC Series - High Voltage Capacitors Holy Stone Multilayer Ceramic Chip Capacitors [ High Voltage NP0 and X7R Capacitors ] HVC Series Holy Stone high voltage products are designed and manufactured to meet the general requirements of international standards. The product offering is well suited for commercial and industrial applications and
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Untitled
Abstract: No abstract text available
Text: HVC Series - High Voltage Capacitors Holy Stone Multilayer Ceramic Chip Capacitors [ High Voltage NP0 and X7R Capacitors ] HVC Series Holy Stone high voltage products are designed and manufactured to meet the general requirements of international standards. The product offering is well suitable for commercial and industrial applications and
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APT10026L2FLL
Abstract: DSA003654
Text: APT10026L2FLL 1000V 38A 0.260Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT10026L2FLL
O-264
O-264
APT100Package
APT10026L2FLL
DSA003654
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Untitled
Abstract: No abstract text available
Text: APT10026L2FLL 1000V 38A 0.260Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT10026L2FLL
O-264
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APT8020B2LL
Abstract: APT8020LLL
Text: APT8020B2LL APT8020LLL 800V 38A 0.200Ω B2LL POWER MOS 7 R MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020B2LL
APT8020LLL
O-264
O-264
O-247
APT8020B2LL
APT8020LLL
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Untitled
Abstract: No abstract text available
Text: APT10026L2LL 1000V 38A 0.260Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT10026L2LL
O-264
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Untitled
Abstract: No abstract text available
Text: APT8020B2LL APT8020LLL 0.200Ω 800V 38A B2LL POWER MOS 7 R MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020B2LL
APT8020LLL
O-264
O-264
O-247
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APT8020lllg
Abstract: APT8020B2LL
Text: APT8020B2LL G APT8020LLL(G) 800V 38A 0.200Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. B2LL POWER MOS 7 R MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching
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APT8020B2LL
APT8020LLL
O-247
APT8020lllg
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Untitled
Abstract: No abstract text available
Text: APT10026L2LL 1000V 38A 0.260Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT10026L2LL
O-264
O-264
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Untitled
Abstract: No abstract text available
Text: APT8020B2FLL APT8020LFLL 800V POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020B2FLL
APT8020LFLL
O-264
O-247
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Untitled
Abstract: No abstract text available
Text: 3 THIS DRAWING I S UNPUBLISHED. O RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ,19 REVISIONS ALL RIGHTS RESERVED. DESCRIPTION RELEASE -1, -2, -3 DATE DWN APVD 08MAR04 TS DD D 152 REF H jjH m n r r JSk ñ t H ;H ;A ; i L 5 LABEL OVERMOLLEL
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08MAR04
13MAR03
08MAR04
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Xicor 28C010
Abstract: 28C010-200 28C010-120 28C010-150 XM28C010-25 28C010-250 28C010H-120 28C010H-150 28C010H-200 28C010H-250
Text: - 152- 2 8 C O 1 O m & ít * m sm cc> X 4 A « TAAC max ns TCAC max (ns) TOH tax (ns) TOE max (ns) TOD max (ns) VDD (V) I DD/STANDBY (ibA) VIL max (V) 1 VIH min (V) & ii / m £ Ci tax (pF) V O L / I VOL max (V/mA) mæ V O H / I VOH min (V/mA) Co max (pF)
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28C010-120
28C010-150
28C010-200
28C010-250
28C010H-120
28C0/2
28C010
Pin32
Xicor 28C010
XM28C010-25
28C010H-150
28C010H-200
28C010H-250
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143431
Abstract: No abstract text available
Text: 7 T H IS JÊL DRAWING COPYRIGHT 15 UNPUBLISHED. 19 RELEASED FOR P U B L I C A T IO N BY AMP INCORPORATED. , 6 4 5 3 2 19 DI ST LOC ALL RIGHTS RESERVED. REVISIONS 00 GP DE SC RI PT IO N J ACK5CREW 4-40 REL -1 THRU -1 1 T5 l 2 JULOl DD P 2 OVERMOLD COLOR : GRAY
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JUN97
143431
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Untitled
Abstract: No abstract text available
Text: KS88C9408 MICROCONTROLLER ELECTRICAL DATA ELECTRICAL DATA Table 15-1. Absolute Maximum Ratings T a = 25°C Parameter Symbol Conditions Rating Unit Supply voltage VDD - - 0 . 3 to + 7 .0 V Input voltage V|N - —0.3 to V d d + 0.3 V O utput voltage Vo - —0.3 to V d d + 0.3
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KS88C9408
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TFK S 186 P
Abstract: tfk 138 JUPD70236 TFK S 186 TFK 162 -12 mrd 148 D70236A tfk 189 p
Text: NEC /¿PD70236A 15. ELECTRICAL SPECIFICATIONS Available Electrical Specifications - - _ _ _ _ _ V dd = 5 V ±10% V dd = 3.6 to 4.5 V V dd = 2.7 to 3.6 V Remarks 15.1 HPD70236A-10 HPD70236A-12 HPD70236A-16 HPD70236A-20 T a = -40 to +85 °C
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HPD70236A-10
HPD70236A-12
HPD70236A-16
PD70236A
HPD70236A-20
A23-A0
TFK S 186 P
tfk 138
JUPD70236
TFK S 186
TFK 162 -12
mrd 148
D70236A
tfk 189 p
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT li PD16732A, 16732B 384-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64-GRAY SCALES The n PD16732A, 16732B are a source driver for TFT-LCDs capable of dealing with displays with 64-gray scales. Data input is based on digital input configured as 6 bits by 6 dots (2 pixels), which can realize a full-color display of
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PD16732A,
16732B
384-OUTPUT
64-GRAY
16732B
S13972EJ1V0DS00
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Untitled
Abstract: No abstract text available
Text: 7 T H IS DRAW ING COPYRIGHT IS U N P U B L IS H E D . - RELEASED BY TYCO ELECTRON ICS CORPORATION. FO R 5 6 4 2 3 PU BLICATIO N A L L R IG H T S RESERVED. LOC D IS T GP 00 REVISIONS LTR 01 DATE RELEASED PER EC 0S 13 - 0 4 4 0 - 0 4 REVISED PER E C O -1 0 -0 0 0 4 4 4
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0S13-0440-04
03NOV09
00/im
30/jm
00/jm
31MAR2000
18MAY05
us012439
\dmnew\0440\5787851-c
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3052a
Abstract: boe vfd LC6512 LC866648 LC866216A
Text: SANYO SEMICONDUC TOR CORP b3E D ? ^ ? Q 7 h GDlOñOE TfiT • TSAJ Continued from previous page Packtg* > s sacks CycJs une iWM - t o « M u n i. ■ ■ ¡■ ■ IllH ■■■■■ m ■ ■ ■ ■ ■ ■ - 32 768 x 8 512 x 8 128 1.0 10 mA LC86E5032V
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LC86E5032V
LC86P5032V
LC866008A*
LC866012A*
LC866016A*
LC86602QA*
LC866024A*
LC866032A*
LC86E6032*
LC86P6032*
3052a
boe vfd
LC6512
LC866648
LC866216A
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cxd1135
Abstract: SM5841BS CXD1125 Sony CXD1135 cxd1130 SONY cxd1130 SM5841AS ad1865 yamaha ic YM3623
Text: rupe NIPPON PRECISION CIRCUITS INC. S M 5 8 4 1 A /B Audio Multi-function Digital Filter OVERVIEW The SM5841A/B are digital filters for digital audio, fabricated in Molybdenum-gate CMOS. The SM5841A/B feature selectable digital deemphasis, digital attenuation and soft mute functions. The serial data format uses
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SM5841A/B
SM5841A/B
16-bit
20-bit
22-pin
69-tap
13-tap
NC9251CE
cxd1135
SM5841BS
CXD1125
Sony CXD1135
cxd1130
SONY cxd1130
SM5841AS
ad1865
yamaha ic
YM3623
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ericsson 10007
Abstract: c 2575 gs
Text: ERICSSON ^ PTF 10007 35 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The PTF 10007 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 35 w atts minimum output power. Nitride surface
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ate-Sou05
ericsson 10007
c 2575 gs
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