DD 128 TRANSISTOR Search Results

DD 128 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

DD 128 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
823B Abstract: DL201 motorola handbook 84 pin plcc ic base Reliability and quality handbook Text: MOTOROLA SEMICONDUCTOR GENERAL INFORMATION Packaging & Case Information 84-Pin PLCC CASE 780A-01 ISSUE A FN SUFFIX 181-Pin PGA CASE 795A–02 ISSUE A HI SUFFIX 128-Pin QFP CASE 862A-02 ISSUE B DD SUFFIX 208-Pin QFP CASE 872A-01 ISSUE TBD DK SUFFIX 160-Pin QFP	Original	84-Pin 80A-01 181-Pin 128-Pin 62A-02 208-Pin 72A-01 160-Pin 64A-03 224-Pin 823B DL201 motorola handbook 84 pin plcc ic base Reliability and quality handbook	PDF
STP32N05L Abstract: STP32N05LFI Text: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	STP32N05L STP32N05LFI 100oC 175oC O-220 STP32N05L STP32N05LFI	PDF
STP32N06L Abstract: STP32N06LFI Text: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	STP32N06L STP32N06LFI 100oC 175oC O-220 STP32N06L STP32N06LFI	PDF
STP32N06L Abstract: STP32N06LFI Text: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	STP32N06L STP32N06LFI 100oC O-220 STP32N06L STP32N06LFI	PDF
STP32N06L Abstract: STP32N06LFI Text: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	STP32N06L STP32N06LFI 100oC O-220 STP32N06L STP32N06LFI	PDF
STP32N05L Abstract: STP32N05LFI Text: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	STP32N05L STP32N05LFI 100oC O-220 STP32N05L STP32N05LFI	PDF
STP32N05L Abstract: STP32N05LFI Text: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	STP32N05L STP32N05LFI 100oC O-220 STP32N05L STP32N05LFI	PDF
spp77n05 Abstract: Q67040-S4001-A2 BUZ 32 SMD Text: BUZ 100 S SPP77N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 100 S 55 V	Original	SPP77N05 O-220 Q67040-S4001-A2 30/Jan/1998 spp77n05 Q67040-S4001-A2 BUZ 32 SMD	PDF
TE1509 Abstract: TE1055 30D8 DD 127 D TRANSISTOR te1157.1 TE1064 TE1068 TE1090 TE1105 TYPE TE Text: Type TE Vishay Sprague Aluminum Capacitors LITTL-LYTIC Electrolytics FEATURES • Proven dependable performance in the industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of	Original	TE1309 TE1400 TE1401 TE1402 TE1403 TE1404 TE1407 TE1408 TE1409 TE1410 TE1509 TE1055 30D8 DD 127 D TRANSISTOR te1157.1 TE1064 TE1068 TE1090 TE1105 TYPE TE	PDF
BSL215C Abstract: No abstract text available Text: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 150 140 mW VGS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel VDS · Enhancement mode RDS on ,max · Super Logic level (2.5V rated) · Avalanche rated	Original	BSL215C IEC61249-2-21 H6327: BSL215C	PDF
Untitled Abstract: No abstract text available Text: MAGX-000912-500L00 MAGX-000912-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 s Pulse, 10% Duty Features Rev. V5 MAGX-000912-500L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally matched  Common-Source configuration	Original	MAGX-000912-500L00 MAGX-000912-500L0S MAGX-000912-500L00	PDF
Untitled Abstract: No abstract text available Text: MAGX-000912-500L00 MAGX-000912-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 s Pulse, 10% Duty Features Rev. V3 MAGX-000912-500L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally matched  Common-Source configuration	Original	MAGX-000912-500L00 MAGX-000912-500L0S MAGX-000912-500L00	PDF
BSL215C Abstract: HLG09283 L6327 Text: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)	Original	BSL215C L6327: BSL215C HLG09283 L6327	PDF
BSL215C Abstract: HLG09283 L6327 Text: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)	Original	BSL215C L6327: BSL215C HLG09283 L6327	PDF

Untitled Abstract: No abstract text available Text: PTF 10147 GOLDMOS Field Effect Transistor 10 Watts, 1.0 GHz Description The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold	Original	P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF	PDF
10147 Abstract: GE capacitor 2R13-6 G200 Text: PTF 10147 GOLDMOS Field Effect Transistor 10 Watts, 1.0 GHz Description The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold	Original	P4525 P5182 1-877-GOLDMOS 1522-PTF 10147 GE capacitor 2R13-6 G200	PDF
S178A Abstract: VIDEO PULSE GENERATOR Text: S178A Video Pulse Generator DIP 28 The S 178 A is an MOS circuit using p-channel metal-gate-technology with enhancement and depletion transistors, featuring the following technical characteristics: The video pulse generator produces the sync, control, and erase signals required for the	OCR Scan	S178A S178A VIDEO PULSE GENERATOR	PDF
t750 Abstract: ds 300 u810 Text: an A M P com pany RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 Features • • • • • • N-Channel Enhancem ent Mode Device Meets CECOM Drawing A3012711 D esigned for Frequency H opping Systems 30-90 MHz I.ower Capacitances for Broadband O peration	OCR Scan	A3012711 FH2114 t750 ds 300 u810	PDF
Untitled Abstract: No abstract text available Text: *57 SGS-THOMSON iL iO M K I stp32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N 06LFI • • . ■ ■ . ■ ■ . V dss R DS on Id 60 V 60 V < 0.055 a < 0.055 a 32 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y	OCR Scan	32N06L STP32N06LFI STP32N06L STP32N 06LFI	PDF
Untitled Abstract: No abstract text available Text: SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 349 ^ D S on 100 V 32 A 0.06 n Maximum Ratings Parameter Continuous drain current, Tc = 27 "C Pulsed drain current, Tc = 25 "C Avalanche current, limited by 7]max	OCR Scan	O-218 C67078-S3113-A2	PDF
Untitled Abstract: No abstract text available Text: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vos fc flDS on Package Ordering Code BUZ 349 100 V 32 A 0.06 £2 TO-218AA C67078-S3113-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit A 7 b = 27 -C	OCR Scan	O-218AA C67078-S3113-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T	PDF
2SC9013 Abstract: 2sc9013 transistor UM66T 2SC901 UM66T Series UM66 um66 music generator Text: UM66T Series Simple Melody Generator Features • ■ ■ ■ ■ ■ 64-note ROM m em ory ■ 1.3V to 3.3V operating voltage and low power consum ption ■ Dynamic speaker can be driven with an external NPN transistor OSC. resistor is built-in One-shot m ode o r level-hold m ode can be selected	OCR Scan	UM66T 64-note 2SC9013 2SC9013 UM66T 2sc9013 transistor 2SC901 UM66T Series UM66 um66 music generator	PDF
STP32N05L Abstract: No abstract text available Text: *57 TYPE STP32N05L STP32N 05LFI • • . ■ ■ . ■ ■ . SGS-THOMSON iL iO M K I stp32Nosl STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 50 V 50 V < 0.055 a < 0.055 a 32 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y	OCR Scan	32Nosl STP32N05LFI STP32N05L STP32N 05LFI	PDF
MOTOROLA POWER TRANSISTOR lc 945 Abstract: zener ap 474 940 629 MOTOROLA 113 Text: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.	OCR Scan	RF158/D MOTOROLA POWER TRANSISTOR lc 945 zener ap 474 940 629 MOTOROLA 113	PDF

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DD 128 TRANSISTOR Search Results

DD 128 TRANSISTOR Result Highlights (5)

DD 128 TRANSISTOR Datasheets Context Search

823B

STP32N05L

STP32N06L

STP32N06L

STP32N06L

STP32N05L

STP32N05L

spp77n05

TE1509

BSL215C

Untitled

Untitled

BSL215C

BSL215C

Untitled

10147

S178A

t750

Untitled

Untitled

Untitled

2SC9013

STP32N05L

MOTOROLA POWER TRANSISTOR lc 945