Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DC MARKING CODE DPAK Search Results

    DC MARKING CODE DPAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd

    DC MARKING CODE DPAK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor D888

    Abstract: D888 STD888 st d888
    Text: STD888 HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR • ■ ■ ■ ■ Ordering Code Marking STD888 D888 VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN, hFE > 100 5 A CONTINUOUS COLLECTOR CURRENT SURFACE-MOUNTING DPAK TO-252


    Original
    PDF STD888 O-252) O-252 transistor D888 D888 STD888 st d888

    Untitled

    Abstract: No abstract text available
    Text: SKFM640C-D FM120-M+ WILLAS THRU THRU 6.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER DPAK RECTIFIERS PACKAGE -20V- 200V SKFM6200C-D FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers


    Original
    PDF OD-123+ SKFM64 FM120-M SKFM62 00C-D FM1200-M OD-123H FM120-MH FM130-MH FM140-MH

    SK1045Y

    Abstract: SK1040Y SKFM1045Y-D SKFM1045Y-D-TH SK1045
    Text: SKFM1040Y-D FM120-M+ WILLAS THRU THRU 10.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 100V SKFM10100Y-D FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER DPAK RECTIFIERS PACKAGE-20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers


    Original
    PDF SKFM101 00Y-D FM1200-M PACKAGE-20V- OD-123+ SKFM104 FM120-M OD-123H FM120-MH FM130-MH SK1045Y SK1040Y SKFM1045Y-D SKFM1045Y-D-TH SK1045

    0y marking

    Abstract: 8.0A SCHOTTKY BARRIER RECTIFIERS
    Text: SKFM840Y-D FM120-M+ WILLAS THRU THRU 8.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 100V 1.0A SURFACE MOUNT SCHOTTKY BARRIER DPAK RECTIFIERS PACKAGE -20V- 200V SKFM8100Y-D FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers


    Original
    PDF OD-123+ SKFM84 FM120-M SKFM81 00Y-D FM1200-M OD-123H FM150-MH FM160-M FM180-MH 0y marking 8.0A SCHOTTKY BARRIER RECTIFIERS

    51y diode

    Abstract: SGFM52Y-D-TH
    Text: WILLAS FM120-M+ SGFM51Y-D THRU THRU 5.0A SUFRACE MOUNT SUPER FAST RECTIFIERS - 50-600V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V DPAK PACKAGE FM1200-M+ SGFM58Y-D Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers


    Original
    PDF 0-600V OD-123+ FM120-M FM1200-M 58Y-D OD-123H FM120-MH FM130-MH FM140-MH FM150-MH 51y diode SGFM52Y-D-TH

    Untitled

    Abstract: No abstract text available
    Text: SKFM1040C-D FM120-M+ WILLAS THRU THRU 10.0A SCHOTTKY BARRIER RECTIFIERS - 40V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER DPAKRECTIFIERS PACKAGE-20V- 200V SKFM10200C-D FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers


    Original
    PDF OD-123+ SKFM10 40C-D FM120-M 200C-D FM1200-M FM120-MH FM130-MH FM140-MH

    TSC5304EDCP

    Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
    Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


    Original
    PDF TSC5304ED O-251 O-252 TSC5304EDCP TSC5304EDCH O-252 75pcs marking E11 DIODE power transistor Ic 4A NPN to - 251

    TSC5302DCH

    Abstract: TSC5302DCP DIODE G14
    Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation


    Original
    PDF TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH DIODE G14

    TSC5303DCH

    Abstract: TSC5303DCP transistor C14
    Text: TSC5303D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


    Original
    PDF TSC5303D O-251 O-252 TSC5303DCH TSC5303DCP transistor C14

    C5 MARKING TRANSISTOR

    Abstract: TSC136L NPN Silicon Power Transistor DPAK NPN Transistor 1.5A 400V 18BSC sot251 b09 transistor
    Text: TSC136L High Voltage NPN Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 2A VCE(SAT) Features 0.6V @ IC / IB = 1.5A / 0.5A Block Diagram ● High Voltage ● High Speed Switching


    Original
    PDF TSC136L O-251 O-252 TSC136LCP TSC136LCH 70pcs C5 MARKING TRANSISTOR TSC136L NPN Silicon Power Transistor DPAK NPN Transistor 1.5A 400V 18BSC sot251 b09 transistor

    DLA5P800UC

    Abstract: No abstract text available
    Text: DLA5P800UC High Efficiency Standard Rectifier VRRM = 2x 800 V I FAV = 5A VF = 1.12 V Phase leg Part number DLA5P800UC Marking on Product: M5RLUP Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-252 DPak ● Planar passivated chips


    Original
    PDF DLA5P800UC O-252 60747and 20130204a DLA5P800UC

    Untitled

    Abstract: No abstract text available
    Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation


    Original
    PDF TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH TSC53rty

    DIODE F10

    Abstract: transistor C 2290 TSC5302D TSC5302DCH TSC5302DCP
    Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation


    Original
    PDF TSC5302D O-251 O-252 DIODE F10 transistor C 2290 TSC5302D TSC5302DCH TSC5302DCP

    700VV

    Abstract: TSC5302D halogen ballast 18BSC TSC5302DCH TSC5302DCP diode marking code 540 transistor B 540
    Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation


    Original
    PDF TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH 700VV TSC5302D halogen ballast 18BSC diode marking code 540 transistor B 540

    TSC5304D

    Abstract: TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251
    Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


    Original
    PDF TSC5304D O-251 O-252 TSC5304D TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251

    TSC5304ED

    Abstract: power transistor Ic 4A NPN to - 251 TSC5304EDCP transistor c10 TO-252 marking C10 marking C10
    Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC 4A VCE(SAT) Features ● 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


    Original
    PDF TSC5304ED O-251 O-252 TSC5304ED power transistor Ic 4A NPN to - 251 TSC5304EDCP transistor c10 TO-252 marking C10 marking C10

    Untitled

    Abstract: No abstract text available
    Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation


    Original
    PDF TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH

    5210 diode

    Abstract: NPN Silicon Power Transistor DPAK npn transistors 400V low power TSC5304D TSC5304DCH TSC5304DCP C5 MARKING TRANSISTOR L 0814 CW68
    Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 2.5A / 0.5A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


    Original
    PDF TSC5304D O-251 O-252 5210 diode NPN Silicon Power Transistor DPAK npn transistors 400V low power TSC5304D TSC5304DCH TSC5304DCP C5 MARKING TRANSISTOR L 0814 CW68

    marking c08

    Abstract: C08 marking 250V transistor npn 2a BM 0228 marking code C5 power transistor Ic 4A NPN to - 251 1A MARKING CODE C5 MARKING TRANSISTOR marking code B2 NPN Silicon Power Transistor DPAK
    Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


    Original
    PDF TSC5304D O-251 O-252 marking c08 C08 marking 250V transistor npn 2a BM 0228 marking code C5 power transistor Ic 4A NPN to - 251 1A MARKING CODE C5 MARKING TRANSISTOR marking code B2 NPN Silicon Power Transistor DPAK

    TSC5303D

    Abstract: diode b10 250V transistor npn 2a
    Text: TSC5303D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


    Original
    PDF TSC5303D O-251 O-252 TSC53erty TSC5303D diode b10 250V transistor npn 2a

    Untitled

    Abstract: No abstract text available
    Text: DLA10IM800UC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 10 A VF = 1.16 V Single Diode Part number DLA10IM800UC Marking on Product: MARLUI Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-252 DPak ● Planar passivated chips


    Original
    PDF DLA10IM800UC O-252 60747and 20130121b

    Untitled

    Abstract: No abstract text available
    Text: DLA10IM800UC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 10 A VF = 1.16 V Single Diode Part number DLA10IM800UC Marking on Product: MARLUI Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-252 DPak ● Planar passivated chips


    Original
    PDF DLA10IM800UC O-252 60747and 20130121b

    6Y150AS

    Abstract: 6Y150AS IXYS
    Text: DSS6-015AS Schottky Diode VRRM = 150 V I FAV = 6A VF = 0.62 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-015AS Marking on Product: 6Y150AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 DPak


    Original
    PDF DSS6-015AS 6Y150AS O-252 60747and 20131031b 6Y150AS 6Y150AS IXYS

    Untitled

    Abstract: No abstract text available
    Text: DSS6-0045AS Schottky Diode VRRM = 45 V I FAV = 6A VF = 0.5 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0045AS Marking on Product: 6Y045AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 DPak


    Original
    PDF DSS6-0045AS 6Y045AS O-252 60747and 20131031b