2N6058
Abstract: 1165897
Text: 1165897 Darlington complementary silicon power transistors. Designed for general-purpose amplifier and low frequency switching applications. Features: • High DC current gain - hFE = 3500 typical at IC = 5.0A dc. • Collector-emitter sustaining voltage - at 100mA
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100mA
2N6058.
2N6058
1165897
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13003 charger
Abstract: 230v to 5v circuit using 13003 transistor 121k 1kv capacitor
Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE Level 6 Standard Rev 1.4 Jun 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2013 - Jun - 26
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ACT334
ACT512
ACT410
ACT411
ACT410/411
ACT413
F/400V
SC053
1000pF/400V
13003 charger
230v to 5v circuit using 13003 transistor
121k 1kv capacitor
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230V AC primary to 12V, 1A secondary transformer
Abstract: 230v dc 5a rectifier diode 13003 charger 230V ac to 5V dc usb charger circuit CM 2N65
Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs For DOE Level 6 Standard Rev 1.5 Jan 2014 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History Page 9,10 Page 11,12 2014 - Jan - 26
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ACT334
ACT512
ACT410
ACT411
ACT410/411
ACT413
F/400V
SC053
1000pF/400V
230V AC primary to 12V, 1A secondary transformer
230v dc 5a rectifier diode
13003 charger
230V ac to 5V dc usb charger circuit
CM 2N65
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transistor darlington package to.3
Abstract: 2N6052
Text: 1165915 Darlington complementary silicon power transistors. This package is designed for general-purpose amplifier and low frequency switching applications. Features: • • • • TO-3 High DC current gain - hFE = 3500 (typical) at IC = 5.0A dc. Collector-emitter sustaining voltage - at 100mA.
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100mA.
transistor darlington package to.3
2N6052
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EE16-4 core transformer
Abstract: EE16 transformer 5v 2.1a
Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT41X Rev 1.5 Jan 2014 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History 2014 - Jan - 23 Rev 1.5 Page 4.5 Update ACT410 5V2.1A application solution transformer and parameter.
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ACT41X
ACT410
ACT413
EPC17)
ACT411
12V1A
ACT412
-11For
EE16-4 core transformer
EE16 transformer 5v 2.1a
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EE16 12V
Abstract: SMD TRANSISTOR B7 EE16 transformer 5v 2.1a t1/epc17 TRANSFORMER smd transistor 12W 3 pins EE16-4 core transformer
Text: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT41X Rev 1.4 JUL 2013 -1- www.active-semi.com High Performance AC/DC Switching Power Solutions Application Change Note Revision History 2013 - Jul - 22 Rev 1.4 Page 4.5 Update ACT410 5V2.1A application solution transformer and parameter.
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ACT41X
ACT410
ACT413
EPC17)
ACT411
12V1A
ACT412
-11For
EE16 12V
SMD TRANSISTOR B7
EE16 transformer 5v 2.1a
t1/epc17 TRANSFORMER
smd transistor 12W 3 pins
EE16-4 core transformer
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2N5631
Abstract: 2N6031
Text: Product Specification www.jmnic.com 2N5631 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6031 ・High collector-emitter sustaining voltage ・High DC current gain ・Low collector-emitter saturation voltage APPLICATIONS
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2N5631
2N6031
2N5631
2N6031
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Motorola transistor 388 TO-204AA
Abstract: 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —
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2N6030
2N6031
2N5630)
2N6035,
2N6038
2N6036,
2N6039
225AA
2N6035
2N6036*
Motorola transistor 388 TO-204AA
714 ic
BC 458
2SC124
BU108
BU326
2SA1046
2SC7
BDX54
2SD214
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ic 7490
Abstract: 2N60 transistor Ic 7490 circuit 2N6034 PNP 2N60 2N60 2N6037 2N6039 7490 ic 2N6035
Text: # NPN PNP 2N60342N6037 2N60352N6038 2N60362N6039 @ PLASTIC DAR LINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. o High DC Current hFE = 2000 o Gain– Typ Collector-Emitter
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2N6034
2N6037
2N6035
2N6038
2N6036
2N6039
2N6034,
2N6035,
ic 7490
2N60 transistor
Ic 7490 circuit
2N6034
PNP 2N60
2N60
2N6037
2N6039
7490 ic
2N6035
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2N6034
Abstract: 2N6036 2N6035 6038
Text: SavantIC Semiconductor Product Specification 2N6034 2N6035 2N6036 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2N6037/6038/6039 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier
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2N6034
2N6035
2N6036
O-126
2N6037/6038/6039
2N6034
2N6035
2N6036
6038
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2N6039
Abstract: 2N6037 2N6038 2n6034
Text: SavantIC Semiconductor Product Specification 2N6037 2N6038 2N6039 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2N6034/6035/6036 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier
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2N6037
2N6038
2N6039
O-126
2N6034/6035/6036
2N6037
2N6038
2N6039
2n6034
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2N6043
Abstract: 2N6045 2N6044 2N6045 NPN POWER DARLINGTON 2n6040
Text: SavantIC Semiconductor Product Specification 2N6043 2N6044 2N6045 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2N6040/6041/6042 ·DARLINGTON ·High DC current gain ·Low collector saturation voltage · APPLICATIONS
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2N6043
2N6044
2N6045
O-220C
2N6040/6041/6042
2N6043
2N6044
2N6045
2N6045 NPN POWER DARLINGTON
2n6040
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2N6044
Abstract: 2N6045 2N6043 2N6043 data sheet 2n6040
Text: Inchange Semiconductor Product Specification 2N6043 2N6044 2N6045 Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・Complement to type 2N6040/6041/6042 ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・ APPLICATIONS
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2N6043
2N6044
2N6045
O-220C
2N6040/6041/6042
2N6043
2N6044
2N6045
2N6043 data sheet
2n6040
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BU108
Abstract: MJE104 MJ1000 2SD424 2SD423 2sc2371 complementary BU208 MJE2482 2SD675 2SC1419
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc
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2N3773
2N6609
2N3773*
2N6609
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
BU108
MJE104
MJ1000
2SD424
2SD423
2sc2371 complementary
BU208
MJE2482
2SD675
2SC1419
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2N6039
Abstract: 2N6037 2N6038 2N603 2n6034
Text: Inchange Semiconductor Product Specification 2N6037 2N6038 2N6039 Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2N6034/6035/6036 ・DARLINGTON ・High DC current gain APPLICATIONS ・Designed for general-purpose amplifier
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2N6037
2N6038
2N6039
O-126
2N6034/6035/6036
2N6037
2N6038
2N6039
2N603
2n6034
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2N5631
Abstract: 2N5631 equivalent 2N6031
Text: SavantIC Semiconductor Product Specification 2N5631 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6031 ·High collector-emitter sustaining voltage ·High DC current gain@IC=8A ·Low collector saturation voltage APPLICATIONS
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2N5631
2N6031
2N5631
2N5631 equivalent
2N6031
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2N5631
Abstract: 2N6031 2N5631 equivalent
Text: Inchange Semiconductor Product Specification 2N5631 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6031 ・High collector-emitter sustaining voltage ・High DC current gain@IC=8A ・Low collector saturation voltage APPLICATIONS
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2N5631
2N6031
2N5631
2N6031
2N5631 equivalent
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MJE34 pnp
Abstract: 2N6041 application 2SC493 2SA1046 MJ15003 300 watts amplifier 2SC334 bc 617 transistor equivalent BUX98A pin configuration NPN transistor tip41c BU326
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors PNP 2N6040 thru 2N6042* NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —
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2N6040,
2N6043
2N6041,
2N6044
2N6042,
2N6045
2N6040
MJE34 pnp
2N6041 application
2SC493
2SA1046
MJ15003 300 watts amplifier
2SC334
bc 617 transistor equivalent
BUX98A
pin configuration NPN transistor tip41c
BU326
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2SA1046
Abstract: mje15033 replacement 2SC1030 BD417 BD415 BD295 BU108 2SB528 BD262 2SC2080
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 See 2N6050 Complementary Silicon Plastic Power Transistors PNP 2N6107 2N6109* . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 7.0 Amperes
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2N6057
2N6059
2N6050)
2N6111,
2N6288
2N6109
2N6107,
2N6292
2SA1046
mje15033 replacement
2SC1030
BD417
BD415
BD295
BU108
2SB528
BD262
2SC2080
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2N6035 2N6036 2N6038 2N6039
Abstract: 1N5825 2N6035 2N6036 2N6038 2N6039 MSD6100
Text: ON Semiconductor PNP 2N6035 Plastic Darlington Complementary Silicon Power Transistors 2N6036* NPN 2N6038 . . . designed for general–purpose amplifier and low–speed switching applications. 2N6039 * • High DC Current Gain — hFE = 2000 Typ) @ IC = 2.0 Adc
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2N6035
2N6036*
2N6038
2N6039
2N6035,
2N6036,
225AA
r14525
2N6035 2N6036 2N6038 2N6039
1N5825
2N6035
2N6036
2N6038
2N6039
MSD6100
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equivalent 2N6040
Abstract: 2N6043 data sheet 400 watts amplifier circuit diagram 2N6040 2N6041 2N6042 2N6043 2N6044 2N6045 2NXXXX
Text: PNP 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* *Preferred Device Plastic Medium−Power Complementary Silicon Transistors . . . designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
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2N6040,
2N6042,
2N6043*
2N6045*
2N6043
2N6045
2N6043
equivalent 2N6040
2N6043 data sheet
400 watts amplifier circuit diagram
2N6040
2N6041
2N6042
2N6044
2N6045
2NXXXX
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1N5825
Abstract: 2N6052 2N6052G 2N6059 MSD6100
Text: 2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features http://onsemi.com • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc
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2N6052
2N6052/D
1N5825
2N6052
2N6052G
2N6059
MSD6100
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2N6059 MOTOROLA
Abstract: 2N6058 MOTOROLA
Text: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN 2N6058 . . designed for general-purpose amplifier and low frequency switching applications. • High DC Current Gain —
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2N6052/D
2N6058
2N6052,
2N6059
2N6052*
2N6059*
Box5405,
2N6059 MOTOROLA
2N6058 MOTOROLA
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2n6052
Abstract: 2N6058 MOTOROLA 2n6058
Text: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general-purpose amplifier and low frequency switching applications. • • • High DC Current Gain —
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2N6052/D
2N6058
2N6052,
2N6059
2N6052*
2N6059*
O-204AA
2n6052
2N6058 MOTOROLA
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