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    DC 20V MOTOR MATSUSHITA Search Results

    DC 20V MOTOR MATSUSHITA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67H450AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S580FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=1.6 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S581FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation

    DC 20V MOTOR MATSUSHITA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    playstation 2 power supply

    Abstract: playstation 1 power supply SONY PLAYSTATION 3 sony playstation 3 power supply sony playstation 1 power supply sony playstation 2 power supply PLAYSTATION 3 power supply sony playstation 2 graphics synthesizer IBM GEKKO
    Text: Discretes and MultiMarket ICs DMI – BL Power 07/08/2002 DMI – BL Power Sony, Playstation, Nintendo, Gamecube, Microsoft and Xbox are trademarks and property of their respective owners. Semiconductors ASPD / page:2 DMI – BL Power Technical • CPU: Sony "Emotion Engine”, 128 bit, 300 MHz


    Original     		PDF OT223 BSH105 BSH103 PHP225 PHC21025 playstation 2 power supply playstation 1 power supply SONY PLAYSTATION 3 sony playstation 3 power supply sony playstation 1 power supply sony playstation 2 power supply PLAYSTATION 3 power supply sony playstation 2 graphics synthesizer IBM GEKKO

    An6652

    Abstract: 1500 rpm DC motor 9v dc 20v motor matsushita 12v dc motor tape recorder
    Text: ICs for Motor AN6652 Motor Control Circuit • Overview + 0.5 Unit : mm 8.0 – 0.1 3.05 3.8 nt in ue Pl pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo


    Original     		PDF AN6652 An6652 1500 rpm DC motor 9v dc 20v motor matsushita 12v dc motor tape recorder

    dc 20v motor matsushita

    Abstract: dc 20v motor matsua AN6652 AN6652 application
    Text: ICs for Motor AN6652 Motor Control Circuit • Overview + 0.5 Unit : mm 8.0 – 0.1 3.05 ■ Features • Small four-lead plastic package for compact motor. 15.0min. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing


    Original     		PDF AN6652 AN6652 SSIP004-P-0000) dc 20v motor matsushita dc 20v motor matsua AN6652 application

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1406 Silicon N-Channel Power F-MOS FET • Features unit: mm 0.7 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply


    Original     		PDF 2SK1406 140ns

    PU7456

    Abstract: No abstract text available
    Text: Power Transistor Arrays F-MOS FETs PU7456 Silicon N-Channel Power F-MOS FET (with built-in zener diode) • Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation


    Original     		PDF PU7456 PU7456

    dc 20v motor matsushita

    Abstract: 2SK2509
    Text: 2SK2509 Power F-MOS FETs 2SK2509 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed ● High-speed 6.0±0.5 switching 10.0±0.3 ON-resistance 1.0±0.1 M Di ain sc te on na tin nc ue e/ d ● Low 3.4±0.3 8.5±0.2 1.5±0.1 ● Avalanche


    Original     		PDF 2SK2509 dc 20v motor matsushita 2SK2509

    chart polygon mirror motor

    Abstract: 12v 15A dc motor speed controller circuit diagram laser disk spindle motor controller 12v bidirectional dc motor controller file polygon motor controller polygon mirror motor AN8245 AN8245K AN8245SCR voltage regulator input 120 volt
    Text: ICs for Motor AN8245K, AN8245SCR Laser Disk Spindle Motor Controller • Overview AN8245K The AN8245K and AN8245SCR are speed control drive ICs of the brushless motors by means of the 3-phase fullwave current drive system. They are suitable for controlling/driving the laser disk spindle motors, LBP polygon


    Original     		PDF AN8245K, AN8245SCR AN8245K AN8245K AN8245SCR chart polygon mirror motor 12v 15A dc motor speed controller circuit diagram laser disk spindle motor controller 12v bidirectional dc motor controller file polygon motor controller polygon mirror motor AN8245 voltage regulator input 120 volt

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2573 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm (2.0) ● Contactless relay ● Diving circuit for a solenoid


    Original     		PDF 2SK2573

    Untitled

    Abstract: No abstract text available
    Text: 2SK2509 Power F-MOS FETs 2SK2509 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed ● High-speed switching ON-resistance secondary breakdown 1.0±0.1 M Di ain sc te on na tin nc ue e/ d ● No 6.0±0.5 10.0±0.3 ● Low 3.4±0.3


    Original     		PDF 2SK2509

    2SK1833

    Abstract: TOP-220 TOP220 top 220 2sk18 ta202
    Text: Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 90mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 30ns ● No secondary breakdown 16.7±0.3 7.5±0.2 4.0 14.0±0.5 Symbol


    Original     		PDF 2SK1833 SC-67 OP-220 2SK1833 TOP-220 TOP220 top 220 2sk18 ta202

    2sk2128

    Abstract: dc 20v motor matsushita
    Text: Power F-MOS FETs 2SK2128 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±20V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm


    Original     		PDF 2SK2128 2sk2128 dc 20v motor matsushita

    TOP-220

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK1833 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 90mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 30ns ● No secondary breakdown 4.2±0.2 10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2


    Original     		PDF 2SK1833 TOP-220

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3033 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3033

    2sk2323

    Abstract: No abstract text available
    Text: 2SK758 Power F-MOS FETs 2SK2323 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown 3.0±0.2 15.0±0.3 ON-resistance M Di ain sc te on na tin nc ue e/


    Original     		PDF 2SK758 2SK2323

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3032 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3032

    2sk2324

    Abstract: No abstract text available
    Text: 2SK758 Power F-MOS FETs 2SK2324 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features ● Avalanche energy capability guaranteed ● High-speed ø3.2±0.1 2.9±0.2 secondary breakdown 3.0±0.2 15.0±0.3 ON-resistance M Di ain sc te on na tin nc ue e/


    Original     		PDF 2SK758 2SK2324

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3036 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3036

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3027 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3027

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3034 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3034

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3026 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3026

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2923 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/


    Original     		PDF 2SK2923

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2327 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 3.0±0.3 M Di ain sc te on na tin nc ue e/ d φ3.2±0.1 Drain current


    Original     		PDF 2SK2327

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2326 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 4.6±0.2 +0.5 13.7–0.2 15.0±0.3 ● Contactless relay ● Diving circuit for a solenoid


    Original     		PDF 2SK2326

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK3023 Tentative Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage


    Original     		PDF 2SK3023