NEZ1414-8E
Abstract: 39.5dB GaAs FET
Text: 8 W 14 GHz INTERNALLY NEZ1414-8E MATCHED POWER GaAs MES FET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 39.5dB (MIN) PACKAGE OUTLINE T-61 • HIGH GAIN: 6.5 dB TYP • HIGH RELIABILITY GATE SIDE INDICATOR DEPRESSION 0.5 ± 0.1 • CLASS A OPERATION
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NEZ1414-8E
NEZ1414-8E
for11
24-Hour
39.5dB GaAs FET
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C1850
Abstract: Samsung tv remote control circuit diagram c1860 KS51899 SMCS-51 K9 samsung mov k25 c1860 remote SF 455 D transistor c1850
Text: 1. S3C1840 S3C1840 DESCRIPTION S3C1840, a 4-bit single-chip CMOS microcontroller, consists of the reliable SMCS-51 CPU core with on-chip ROM and RAM. Eight input pins and 11 output pins provide the flexibility for various I/O requirements. Auto reset circuit generates reset pulse every certain period, and every halt mode termination time. The S3C1840
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S3C1840
S3C1840,
SMCS-51
S3C1840
fxx/12
S3C1840/C1850/C1860/P1860
0800h
C1850
Samsung tv remote control circuit diagram
c1860
KS51899
K9 samsung
mov k25
c1860 remote
SF 455 D
transistor c1850
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x-band microwave fet
Abstract: NEZ1011-2E 17148
Text: 2 W X-BAND INTERNALLY NEZ1011-2E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 8.5 dB TYP 8.25 ± 0.15 • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGE
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NEZ1011-2E
NEZ1011-2E
SiO242
24-Hour
x-band microwave fet
17148
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ADCOM 3A
Abstract: adcom 2a
Text: 14-Bit, 600+ MSPS D/A Converter AD9725 Preliminary Technical Data FUNCTIONAL BLOCK DIAGRAM FEATURES 600+ MSPS DAC update rate 16/14/12/10-bit resolution family LVDS interface with built-in 100-termination resistors Single data rate and double data rate capability
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14-Bit,
AD9725
16/14/12/10-bit
100-termination
80-lead
14-BIT
MS-026-ADD-HD
SV-80)
AD9725BSV
ADCOM 3A
adcom 2a
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transistor D1138
Abstract: D1138 D1138 transistor KS51840 mov k30 Samsung tv remote control circuit diagram KS51850 D4 samsung tv remote control diagram circuit sony k58 SMCS-51
Text: Product Overview Address Spaces Addressing Modes Memory Map SMCS51 Instruction Set KS51840 1 KS51840 OVERVIEW KS51840, a 4-bit single-chip CMOS microcontroller, consists of the reliable SMCS-51 CPU core with on-chip ROM and RAM. Eight input pins and 11 output pins provide the flexibility for various I/O requirements. Auto reset
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SMCS51
KS51840
KS51840,
SMCS-51
KS51840
1072/fxx
0800h
0900h
transistor D1138
D1138
D1138 transistor
mov k30
Samsung tv remote control circuit diagram
KS51850 D4
samsung tv remote control diagram circuit
sony k58
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D560 transistor
Abstract: nec D560 transistor transistor d560 transistor D1138 KS51850 KS51850 D4 Samsung tv remote control circuit diagram d1138 transistor d560 nec nec D560
Text: 51850 2 KS51850 OVERVIEW KS51850, a 4-bit single-chip CMOS microcontroller, consists of the reliable SMCS-51 CPU core with on-chip ROM and RAM. Eight input pins and 11 output pins provide the flexibility for various I/O requirements. Auto reset circuit generates reset pulse every certain period, and every halt mode termination time. The KS51850
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KS51850
KS51850,
SMCS-51
KS51850
fxx/12
0800h
0900h
0a00h
D560 transistor
nec D560 transistor
transistor d560
transistor D1138
KS51850 D4
Samsung tv remote control circuit diagram
d1138 transistor
d560 nec
nec D560
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AD9724
Abstract: AD9777 DB10 adcom
Text: 12-Bit, 600+ MSPS D/A Converter AD9724 Preliminary Technical Data FUNCTIONAL BLOCK DIAGRAM FEATURES 600+ MSPS DAC update rate 16/14/12/10-bit resolution family LVDS interface with built-in 100-termination resistors Single data rate and double data rate capability
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12-Bit,
AD9724
16/14/12/10-bit
100-termination
80-lead
12-BIT
MS-026-ADD-HD
SV-80)
AD9724BSV
AD9724
AD9777
DB10
adcom
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gaas fet T79
Abstract: NES1821B-30
Text: PRELIMINARY DATA SHEET 30 W L-BAND NES1821B-30 POWER GaAs MESFET OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OR AB OPERATION PACKAGE OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN 24±0.2 20.4±0.15 • HIGH POWER ADDED EFFICIENCY 1.0±0.1 GATE
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NES1821B-30
NES1821B-30
24-Hour
gaas fet T79
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NEZ1011-8E
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NE850R5
Abstract: NE850R599
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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transistor smd code marking 561
Abstract: sot-223 MARKING CODE 718 smd marking 271 Sot
Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,
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OT-223
Q62702-L99
P-SOT223-4-2
EHT08941
GPS05560
transistor smd code marking 561
sot-223 MARKING CODE 718
smd marking 271 Sot
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WL431003667
Abstract: TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512
Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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OT-223
Q62702-L94
P-SOT223-4-2
GPS05560
WL431003667
TRANSISTOR SMD MARKING CODE 703
TRANSISTOR SMD MARKING CODE 723
smd transistor marking p1
TRANSISTOR SMD MARKING CODE 512
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NEZ1011-4E
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NEZ1011-4E 4 W X-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1011-4E is power GaAs FET which provides high gain, high efficiency and high output power in X-band. 8.25 ± 0.15
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NEZ1011-4E
NEZ1011-4E
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x-band microwave fet
Abstract: NEZ1011-8E pt 2399
Text: 8 W X-BAND INTERNALLY NEZ1011-8E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 39.5 dBm TYP PACKAGE OUTLINE T-61 • HIGH LINEAR GAIN: 6.5 dB TYP GATE SIDE INDICATOR DEPRESSION 0.5 ± 0.1 • HIGH EFFICIENCY: 25% TYP
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NEZ1011-8E
NEZ1011-8E
24-Hour
x-band microwave fet
pt 2399
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Untitled
Abstract: No abstract text available
Text: FEATURES & • D C - 4 G H z Frequency Range ■ 5 nSec Switching Speed ■ Low Insertion Loss MODEL NO. P35-4250-0 GaAs MMIC SP4T ■ Ultra Low D C Power Consumption ■ Small Chip S ize .029 x .036 ■ Reflective ■ Plastic Package Available-P/N P35-4250-3
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P35-4250-0
P35-4250-3
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Untitled
Abstract: No abstract text available
Text: GaAs Switches II & Page: In This Issue: DC-2000 MHz To-5 SP2T s. M odel No. DS0850/813 10-1500 MHz To-8 & R a t p a ck SP2T's. M odel No. DS0860/812 5-1000 MHz H igh Iso latio n Flat p a ck SP2T. M odel No. DS0662 5-1000 MHz 24 PIN DIP SP8T. M odel No. DS0838
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DC-2000
DS0850/813
DS0860/812
DS0662
DS0838
DS0874
DC-4000
SP16T.
DS0918
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Untitled
Abstract: No abstract text available
Text: FEA TU R ES MODEL NO. DS0820 är • 1 0 - 1500 MHz ■ 15 m A ,+5 VDC ■ TTL Driver & PIN Diode SP10T ■ Non-Reflective - P A R T IDENTIFICATION je : T .21 018 DIA 38 P L A C E S RF 8 38 37 LOGIC TABLE 7 8 9 10 PIN A3 A2 A1 AD FUNCTION 0 0 0 0 RF 1 TORF COM
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DS0820
SP10T
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NEZ1414-4E 4 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1414-4E is power GaAs FET which provides high gain, high efficiency and high output power in Ku-band. The internal input and output matching enables guaran
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NEZ1414-4E
NEZ1414-4E
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sn 0716
Abstract: NEC D 587
Text: PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSION UNIT: mm DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. 1.0 ± 0.1
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NE6500496
NE6500496
sn 0716
NEC D 587
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Untitled
Abstract: No abstract text available
Text: Infineon ?achnc!ugies GaAs FET CLY 5 Data Sheet • Power amplifier for mobile phones • For frequencies from 400 MHz to 2.5 GHz • Wide operating voltage range: 2.7 to 6 V • POUJ at VD = 3 V , / = 1.8 GHz typ. 26.5 dBm • High efficiency better 55% ESD: Etectrostatic discharge sensitive device,
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Q62702-L90
P-SOT223-4-2
EHT08952
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE1280 SERIES K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS DESCRIPTION CHIP DIMENSIONS unit: jum The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom
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NE1280
NE1280100
NE1280100
NE1280200
NE1280400
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 50W L-BAND PUSH-PULL POWER GaAs MESFET FEATURES_ • • • HIGH OUTPUT POWER: 50 W TYP HIGH DRAIN EFFICIENCY: 52 % TYP @ V ds = 10 V, Id = 2 A, f = 1.96 GHz HIGH LINEAR GAIN: 10.5 dB TYP • PUSH-PULL CONFIGURATION
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NES1821P-50
NES1821P-50
anywhere2-59
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 50W L-BAND PUSH-PULL POWER GaAs MESFET F E A T U R E S _ • HIGH OUTPUT POWER: 50 W TYP • HIGH DRAIN EFFICIENCY: 52 % TYP @ V d s = 10 V, Id = 2 A, f = 1.96 GHz • HIGH LINEAR GAIN: 10.5 dB TYP • PUSH-PULL CONFIGURATION
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NES1821P-50
NES1821P-50
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80500 TRANSISTOR
Abstract: No abstract text available
Text: 2 WATT C-BAND POWER GaAs MESFET FEATURES • NE85002 SERIES SELECTION CHART T Y P IC A L P E R F O R M A N C E CLASS A OPERATION • HIGH EFFICIENCY: • BROADBAND CAPABILITY T|ADD > 3 9 % PA RT NUM B ER TYP FR E Q U E N C Y RANGE G H z Po ut (dB m ) N E 8500200
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NE85002
NE8500295
AN-1001
80500 TRANSISTOR
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