DB4J406K
Abstract: db4j406
Text: This product complies with the RoHS Directive EU 2002/95/EC . DB4J406K Silicon epitaxial planar type For high speed switching circuits • Features Package Short reverse recovery time trr Small reverse current IR Contributes to miniaturization of sets, reduction of component count.
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DB4J406K
667-DB4J406K0R
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db4j406
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Abstract: No abstract text available
Text: Doc No. TT4-EA-12481 Revision. 2 Product Standards Schottky Barrier Diode DB4J406K0R DB4J406K0R Silicon epitaxial planar type Unit: mm For high speed switching circuits 2.0 0.3 Features 0.13 4 3 1 2 1.25 2.1 y Small reverse current IR y Short reverse recovery time trr
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TT4-EA-12481
DB4J406K0R
UL-94
DB2J406
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db4j406k
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DB4J406K Silicon epitaxial planar type For high speed switching circuits • Features Package Short reverse recovery time trr Small reverse current IR Contributes to miniaturization of sets, reduction of component count.
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2002/95/EC)
DB4J406K
DB4J406K0R
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DB5S406K Silicon epitaxial planar type For high speed switching circuits DB4J406K in SSMini5 type package • Features Package Short reverse recovery time trr Small reverse current IR
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DB5S406K
DB4J406K
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DB4J406K
Abstract: ZKH00259BED
Text: This product complies with the RoHS Directive EU 2002/95/EC . DB4J406K Silicon epitaxial planar type For high speed switching circuits • Features Package Short reverse recovery time trr Small reverse current IR Contributes to miniaturization of sets, reduction of component count.
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DB4J406K
22asures
DB4J406K
ZKH00259BED
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-12509 Revision. 3 Product Standards Schottky Barrier Diode DB5S406K0R DB5S406K0R Silicon epitaxial planar type Unit: mm For high speed switching circuits DB4J406K in SSMini5 type package 1.6 0.2 5 Features 0.13 4 1.2 1.6 y Small reverse current IR
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TT4-EA-12509
DB5S406K0R
DB4J406K
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DB2S406
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DB4J406K (Tentative) Silicon epitaxial planar type For high speed switching circuits • Package Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage
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DB4J406K
Abstract: DB5S406K ZKH00359AED
Text: This product complies with the RoHS Directive EU 2002/95/EC . DB5S406K Silicon epitaxial planar type For high speed switching circuits DB4J406K in SSMini5 type package • Features Package Short reverse recovery time trr Small reverse current IR
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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MN864779
Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
Text: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.
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A000021E
MN864779
MN88472
AN12947a
MN6627553
MIP3E3SMY
AN22004A
mip2E2dmy
MIP2F2* replacement
MIP2E7DMY
MIP3E50MY
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