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    Panasonic Electronic Components DB2X41400L

    DIODE SCHOTTKY 40V 2A MINI2-F4-B
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    Avnet Abacus DB2X41400L 143 Weeks 3,000
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    DB2X414 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DB2X41400L Panasonic Electronic Components Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 40V 2A MINI2 Original PDF

    DB2X414 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-12043 Revision. 3 Product Standards Schottky Barrier Diode DB2X41400L DB2X41400L Silicon epitaxial planar type Unit: mm For high frequency rectification 1.6 0.13 2 • Features 2.6 3.5  Low forward voltage VF  Forward current Average IF(AV) = 2 A rectification is possible


    Original     		PDF TT4-EA-12043 DB2X41400L UL-94

    DB2X41400L

    Abstract: db2x4140 667-DB2X41400L
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DB2X414 Silicon epitaxial planar type For high frequency rectification • Package  Features  Forward current (Average) IF(AV) = 2 A rectification is possible  Low forward voltage VF


    Original     		PDF 2002/95/EC) DB2X414 667-DB2X41400L DB2X41400L DB2X41400L db2x4140

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DB2X414 Silicon epitaxial planar type For rectification • Package  Features  High forward current (Average) rating : IF(AV) = 2 A  Low forward voltage VF  Contributes to miniaturization of sets, reduction of component count.


    Original     		PDF 2002/95/EC) DB2X414

    DB2X414

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DB2X414 Silicon epitaxial planar type For high frequency rectification • Package  Features  Forward current (Average) IF(AV) = 2 A rectification is possible  Low forward voltage VF


    Original     		PDF 2002/95/EC) DB2X414 DB2X414

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    MN864779

    Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
    Text: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.


    Original     		PDF A000021E MN864779 MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY

    smini2-f4-b

    Abstract: mini2-f3-b Mini2-F4-B
    Text: High performance SBD series with fine diffusion process Low VF Schottky barrier diode Unit ： mm 0.80 ± 0.05 1.60 ± 0.10 +0.02 0.80 ±0.10 0.58 -0.03 1 ※Junction Barrier Schottky 2 2 0.30 ±0.10 0.60 ±0.10 3.50 ± 0.10 2.60 ± 0.10 7° 5° 1.90 ±0.10


    Original     		PDF DB2W318 DB2X414 DB24416 smini2-f4-b mini2-f3-b Mini2-F4-B