DIODE 906 1334
Abstract: No abstract text available
Text: MITEQ AM-1636 AMPLIFIER FREQUENCY MHz 200–3000 MODEL NUMBER GAIN (dB) (Min.) AM-1636 8 VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) 2.0:1 50/50 1.7 20 23 18 22 16 21 P1dB Gain (dB) 20 14 19 10 18 8 640
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AM-1636
DIODE 906 1334
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miteq au series satcom if amplifiers
Abstract: No abstract text available
Text: MITEQ AM-1185 SERIES AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1185-1000 AM-1185-2000 28 28 0.5 1 2.0:1 2.0:1 50/50 50/50 3.4 3.5 12 10 FREQUENCY (MHz) 1–1000
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AM-1185
AM-1185-1000
AM-1185-2000
200ion,
2002/96/EC
2002/96/EC
miteq au series satcom if amplifiers
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Untitled
Abstract: No abstract text available
Text: MITEQ AM-1622 AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) 5–1000 AM-1622-1000 41 0.75 2.0:1 50/50 3.1 17 15 130 2 5–2000 AM-1622-2000 41 0.75 2.0:1 50/50 3.3 17
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AM-1622
AM-1622-1000
AM-1622-2000
AM-1622-2500
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Untitled
Abstract: No abstract text available
Text: MITEQ AM-1352 SERIES AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) 1–1000 AM-1352-1000 20 0.5 2.0:1 50/50 3.6 17 15 95 1 1–2000 AM-1352-2000 20 0.75 2.0:1 50/50 3.7
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AM-1352
AM-1352-1000
AM-1352-2000
AM-1352-2500
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Untitled
Abstract: No abstract text available
Text: MITEQ AM-1624 SERIES AMPLIFIER FREQUENCY MHz GAIN (dB) (Min.) MODEL NUMBER VAR. (±dB) (Max.) IMPED. IN/OUT (Ohms) VSWR (Max.) NOISE FIGURE (dB, Typ.) 45 Third Order Intercept 38 37 36 35 34 33 40 35 30 1.0 250 500 750 1000 1250 1500 1750 2000 2250 2500
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AM-1624
AM-1624-2500
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SW-SPDT
Abstract: SWSPDT-000300-55
Text: Broadband Standard Product SWSPDT-000300-55 SPDT Absorptive RF Switch September 7, 2006 www.aeroflex.com/bband FEATURES ❑ Input RF power +32dBm ❑ High input to output isolation of > 55 dB @ 3 GHz ❑ Low Insertion Loss of 2.5 dB @ 3 GHz ❑ DC to 3.0 GHz operating frequency
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SWSPDT-000300-55
32dBm
245height
SCD13011
SW-SPDT
SWSPDT-000300-55
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LMX-156
Abstract: No abstract text available
Text: Frequency Mixer LMX-156 Typical Performance Data CONVERSION LOSS dB RF (MHz) 800.0 847.2 894.4 941.7 1000.0 1083.3 1130.6 1225.0 1366.7 1413.9 1500.0 1555.6 1650.0 1791.7 1933.3 2000.0 2122.2 2263.9 2405.6 2500.0 LO (MHz) 830.0 877.2 924.4 911.7 970.0 1053.3
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LMX-156
LMX-156
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SGA-2263-TR1
Abstract: SGA-2263
Text: Preliminary Product Description SGA-2263 Stanford Microdevices’ SGA-2263 is a high performance cascadeable 50-ohm amplifier designed for operation from a 2.2-volt supply. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-2263
SGA-2263
50-ohm
DC-3500
EDS-100626
SGA-2263-TR1
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SGA-2263
Abstract: A22 T transistor transistor data cd
Text: Product Description Stanford Microdevices SGA-2263 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-2263
SGA-2263
DC-3500
EDS-100626
A22 T transistor
transistor data cd
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mmic marking a22z
Abstract: A22cd SGA-2263Z
Text: SGA-2263Z Product Description DC-5000 MHz, Cascadable SiGe HBT MMIC Amplifier Sirenza Microdevices’ SGA-2263Z is a high performance SiGe HBT MMIC Amplifier housed in a low-cost, lead-free RoHS compliant surface-mount package. A Darlington configuration featuring 1 micron emitters provides high FT and excellent
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SGA-2263Z
EDS-103636
DC-5000
mmic marking a22z
A22cd
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Untitled
Abstract: No abstract text available
Text: Product Description The SGA-2263 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter
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SGA-2263
SGA-2263Z
DC-5000
AN-075
EDS-100626
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SGA-2263Z
Abstract: SGA-2263
Text: SGA-2263 Z SGA-2263(Z) Low Noise, High Gain SiGe HBT DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features The SGA-2263 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage
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SGA-2263
5000MHz,
OT-363
OT-363
EDS-100626
SGA-2263Z
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trace code marking RFMD SGA-2263
Abstract: MMIC SOT 363 marking CODE 68 RFmd marking sot 363 SGA-2263Z SGA-2263 trace code marking RFMD 138dB mmic marking a22z
Text: SGA-2263 Z SGA-2263(Z) DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features The SGA-2263 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage
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SGA-2263
5000MHz,
OT-363
OT-363
DS090924
trace code marking RFMD SGA-2263
MMIC SOT 363 marking CODE 68
RFmd marking sot 363
SGA-2263Z
trace code marking RFMD
138dB
mmic marking a22z
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trace code marking RFMD SGA-2263
Abstract: trace code marking RFMD SGA-2263 SGA-2263Z RFMD sot363 mmic sot 363 marking code CD
Text: SGA-2263 Z SGA-2263(Z) DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features The SGA-2263 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage
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SGA-2263
5000MHz,
OT-363
OT-363
DS090924
trace code marking RFMD SGA-2263
trace code marking RFMD
SGA-2263Z
RFMD sot363 mmic
sot 363 marking code CD
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SGA-2263Z
Abstract: 18 dbm amplifier sot363 marking 12 SOT-363 amplifier SIRENZA MARKING SOT-363 SGA-2263
Text: Product Description The SGA-2263 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter
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SGA-2263
SGA-2263
SGA-2263Z
DC-5000
OT-363
EDS-100626
SGA-2263Z
18 dbm amplifier sot363
marking 12 SOT-363 amplifier
SIRENZA MARKING SOT-363
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ma 8920
Abstract: 8920 8952
Text: TITLE TRANSFORMER, SCHOTT 1000 PARKERS LAKE ROAD CORPORATION WAYZATA, MN 55391 AGENCY APPROVAL: N/A PART NUMBER REV D 22632 PAGE 1 END OLD P/N 67137860 SPECIFICATIONS .780 MAX 19.81 1. TEMP CLASS 105° C 2. INDUCTANCE: @ 10 KHz, 0.1 V, (5-8) = 3 mHy ± 3 %
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2-bit flash adc
Abstract: MAX1180 MAX1181 MAX1182 MAX1183 MAX1184 MAX1185 MAX1186 MAX1186ECM MAX4108
Text: 19-2263; Rev 0; 12/01 Dual 10-Bit, 40Msps, 3V, Low-Power ADC with Internal Reference and Multiplexed Parallel Outputs 48 TQFP-EP Functional Diagram appears at end of data sheet. 37 38 39 40 41 42 43 44 45 46 REFN REFP REFIN REFOUT D9A/B D8A/B D7A/B D6A/B D5A/B
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10-Bit,
40Msps,
MAX1186
2-bit flash adc
MAX1180
MAX1181
MAX1182
MAX1183
MAX1184
MAX1185
MAX1186
MAX1186ECM
MAX4108
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2-bit flash adc
Abstract: No abstract text available
Text: 19-2263; Rev 0; 12/01 Dual 10-Bit, 40Msps, 3V, Low-Power ADC with Internal Reference and Multiplexed Parallel Outputs MAX1186ECM -40°C to +85°C 48 TQFP-EP D3A/B D2A/B 38 37 D5A/B D4A/B 40 39 D7A/B D6A/B 42 41 D9A/B D8A/B 44 43 REFIN REFOUT 45 46 Pin Configuration
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10-Bit,
40Msps,
MAX1186
10-bit
105mW
20MHz
40Msps.
2-bit flash adc
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TFM-15
Abstract: No abstract text available
Text: Frequency Mixer TFM-15+ Typical Performance Data RF IN (MHz) 10.1 90.6 171.0 251.5 332.0 412.4 492.9 573.4 653.8 734.3 814.8 915.4 995.8 1096.4 1176.9 1277.5 1357.9 1458.5 1539.0 1639.6 1720.0 1820.6 1901.1 2001.7 2082.1 2182.7 2263.2 2363.8 2444.3 2544.8
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TFM-15+
30MHz
TFM-15
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DFc21r57
Abstract: DFC3r DFC31 jx 903
Text: CERAMIC MICROWAVE FILTERS BAND PASS FILTERS-M B TYPE m u f fn t n /tutorator ui Electronics DFC Series j / \JV s, S 1/ 1 o • ofk 7 c 7\ w -* o ro o o Return Loss dB r N / r o TRANSMISSION vs. REFLECTION CHARACTERISTICS DIMENSIONS: mm Attenuation (dB) 03 N
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DFC2R836P025HHD
DFC3R836P025HHD
DFC3R881P025HHD
DFC3R915P026HHC
DFC3R902P025HHB
DFC3R947P025HHB
CG01-I
DFc21r57
DFC3r
DFC31
jx 903
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Corning 9013
Abstract: No abstract text available
Text: ENG. FILE COPY CON F IGURAT ION TOLERANCE ± .005 UNLESS otherwise specified DWG.NO. ELECTRICAL: 2263-6001 NOMINAL IMPEDANCE (OHMS) DC FREQUENCY RANGE (GHZ) _ VOLTAGE RATING (MAX.VRMS) 1.15+.015 VSWR (MAX. ) _ INSERTION LOSS (DB MAX.) _ 100
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MIL-C-39012
MIL-STD-348
MD-124
i/os/96
Mil-STD-202,
I-STD-202,
MiI-STD-202
I-STD-202.
D-202.
Corning 9013
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tjm sot23
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor Designed for thick and thin—film circuits using surface mount com ponents and requiring low -noise, high-gain signal am plification at frequencies to 1.0 GHz. High Gain — G pe = 17 dB Typ @ f = 450 MHz
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MMBR5031LT1
tjm sot23
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2SC2037
Abstract: 2SC1733 2SC1424 2SC2759 ne73436 JE73 2sc2026 2SC2148 NE73432 NE734
Text: N E C / CALIFORNIA b427414 OGOlHb? 1SE D N EC b -T -ll-tf NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW N O ISE FIG U R E: < 3 dB at 500 MHz The NE734 series of NPN silicon general purpose UHF transis tors provide the designer with a wide selection of reliable
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b427414
NE734
r-31-27
NE73435)
2SC2037
2SC1733
2SC1424
2SC2759
ne73436
JE73
2sc2026
2SC2148
NE73432
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Untitled
Abstract: No abstract text available
Text: N JM 2263 is 3-input, 1-output video sw itch w ith 75fi driver circuit. T w o in p u t are pro vided w ith sink ch ip clam p functions, w hich a d ju st the D C level o f video signal. T h e o th er in p u t o f tra n sisto r open base can m ake c o n tro l o f lum inance signal.
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10MHz
NJM2263
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