Untitled
Abstract: No abstract text available
Text: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D5075M440 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the
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B44066D5075M440
B44066D
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Untitled
Abstract: No abstract text available
Text: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D1499M440 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the
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B44066D1499M440
B44066D
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Untitled
Abstract: No abstract text available
Text: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D1499M440 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the
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B44066D1499M440
B44066D
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DETUNING REACTOR
Abstract: No abstract text available
Text: Film Capacitors – Power Factor Correction Harmonic filter reactor Series/Type: Ordering code: B44066D5075M400 B44066D Date: Version: February 2012 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the
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B44066D5075M400
B44066D
DETUNING REACTOR
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25L
MRFE6VS25LR5
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D260-4118-0000
Abstract: 0119A 0190A
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25L
MRFE6VS25LR5
D260-4118-0000
0119A
0190A
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Untitled
Abstract: No abstract text available
Text: User's Guide SLAU432 – February 2012 DAC348x EVM 1 2 3 4 5 Contents Introduction . 2 1.1 Overview . 2
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SLAU432
DAC348x
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,
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MRFE6VP100H
MRFE6VP100HR5
MRFE6VP100HSR5
MRFE6VP100HR5
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M27500-16RC1509
Abstract: ferronics 11-750-K 11-750-K 12-365-K UT-90-25 Micro-coax UT m27500-16 m27500 transfer impedance transformer mttf MRFE6VP100HR5
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,
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MRFE6VP100H
MRFE6VP100HR5
MRFE6VP100HSR5
MRFE6VP100H
M27500-16RC1509
ferronics 11-750-K
11-750-K
12-365-K
UT-90-25
Micro-coax UT
m27500-16
m27500 transfer impedance
transformer mttf
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G2225X7R225KT3AB
Abstract: m27500 transfer impedance
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,
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MRFE6VP100H
MRFE6VP100HR5
MRFE6VP100HSR5
MRFE6VP100HR5
G2225X7R225KT3AB
m27500 transfer impedance
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ATC600 capacitor
Abstract: MRF7S21170HS
Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to
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MRF7S21170H
MRF7S21170HR3
MRF7S21170HSR3
ATC600 capacitor
MRF7S21170HS
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0119A
Abstract: IC/0119A IC/IC/0119A
Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to
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MRF7S21170H
MRF7S21170HR3
MRF7S21170HSR3
MRF7S21170HR3
0119A
IC/0119A
IC/IC/0119A
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information Netz-Thyristor Phase Control Thyristor T1800N Key Parameters VDRM / VRRM 4200V ITAVM 1795A TC=85°C ITSM vT0 41000A 3570A (TC=55°C) 0,85V rT 0,4mΩ RthJC 7,8K/kW Clamping Force 40…65kN Max. Diameter 111mm
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T1800N
1000A
111mm
50/60Hz
50/60Hz
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4-1000a
Abstract: t1800n
Text: Technische Information / technical information Netz-Thyristor Phase Control Thyristor T1800N Key Parameters VDRM / VRRM 4200V ITAVM 1800A TC=85°C ITSM vT0 41000A 3570A (TC=55°C) 0,85V rT 0,4mΩ RthJC 7,8K/kW Clamping Force 40…65kN Max. Diameter 111mm
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T1800N
1000A
111mm
50/60Hz
50/60Hz
4-1000a
t1800n
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D260-4118-0000
Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25N
MRFE6VS25NR1
MRFE6VS25GNR1
MRFE6VS25N
D260-4118-0000
MRFE6VS25L
MRFE6VS25GNR1
transistor J128
2422D
21-201-J
ATC100B2R7BT500XT
crcw12065k60f
avx c0805c103k5rac
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ATC100B471JT200XT
Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25N
MRFE6VS25NR1
MRFE6VS25N
ATC100B471JT200XT
EB-38
651AT
ATC100B181JT300XT
ATC100B4R3CT500XT
CDR33BX104AKWY
C5750KF1H226ZT
Fair-Rite ATC
MRFE6VS25NR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to
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MRFE6VS25N
MRFE6VS25NR1
25cale
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MSA103
Abstract: BP317 PTB23003X DSA005130 SOT440A
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D031 PTB23003X NPN microwave power transistor Product specification Supersedes data of 1997 Feb 19 1997 Nov 13 Philips Semiconductors Product specification NPN microwave power transistor PTB23003X FEATURES
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M3D031
PTB23003X
OT440A
SCA55
127147/00/03/pp8
MSA103
BP317
PTB23003X
DSA005130
SOT440A
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BP317
Abstract: LXE18300X SC15
Text: DISCRETE SEMICONDUCTORS DATA SHEET LXE18300X NPN microwave power transistor Product specification Supersedes data of January 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor
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LXE18300X
SCA53
127147/00/02/pp8
BP317
LXE18300X
SC15
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Untitled
Abstract: No abstract text available
Text: Durakool Mercury Displacement Relays & Contactors, Mercury Tilt Switches, and Mercury Floats Safety Data Sheet according to the federal final rule of hazard communication revised on 2012 HazCom 2012 Date of issue: 03/11/2015 Version: 1.0 SECTION 1: Identification of the substance/mixture and of the company/undertaking
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NCI-C60399,
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Untitled
Abstract: No abstract text available
Text: REV - DESCRIPTION NIR-52400 Preliminary Release DATE 2/6/2014 PREP APPD VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY Oscillator Specification, Hybrid Clock QUALITY Hi-Rel Standard, High Frequency CMOS ENGINEERING CODE IDENT NO SIZE
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NIR-52400
DOC204900
Mil-Std-981
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OM5608
Abstract: 1236 tuner PCF8574A EN50082-1
Text: INTEGRATED CIRCUITS DATA SHEET OM5608 Multimedia radio tuner Preliminary specification File under Integrated Circuits, IC01 1995 Oct 17 Philips Semiconductors Preliminary specification Multimedia radio tuner OM5608 FEATURES • Local/DX switching to improve large signal handling on
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OM5608
OM5608
SCD44
513061/1500/01/pp8
1236 tuner
PCF8574A
EN50082-1
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339 marking code transistor
Abstract: BP317 MX1011B430W SC15
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX1011B430W NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor
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MX1011B430W
SCA53
127147/00/02/pp8
339 marking code transistor
BP317
MX1011B430W
SC15
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Untitled
Abstract: No abstract text available
Text: 10 No. OF CCTS. 2 2 , 15 6 ± -o TYP„ NON-ACCUM Ie NOTE 6 BOARD LOCKING RAMP OPTIONAL x2 ( 2 .5 ) DIRECTION OF TERMINAL INSERTION. NOTES: 1. M ATERIAL: UL9AV-2 NYLON, IEC 60335-1 5TH EDITION GLOW WIRE CAPABLE, COLOR: BLACK FINISH: N/A ) +O.I3 .312 (11.79
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SD-3069-GNx*
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