JFET TRANSISTOR REPLACEMENT GUIDE j201
Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Text: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone
|
Original
|
PDF
|
U3750BM
U3760MB-FN
U3760MB-SD
SSO-44
SD-40
U3800BM
U3810BM
U4030B
U4030B
JFET TRANSISTOR REPLACEMENT GUIDE j201
UA6538
DC motor speed control using 555 and ir sensor
U2740B-FP
UAA145
CQY80
U2840B
tcrt9050
TCDF1910
sod80 smd zener diode color band
|
Untitled
Abstract: No abstract text available
Text: Datasheet Small-sized Class-D Speaker Amplifiers Filter-Less Class-D Monaural Speaker Amplifier BD27400GUL Key Specifications Circuit current No signal Circuit current(Stand by) Output Power RL=8 Output Power RL=4 Start-up time General Description BD27400GUL is a low voltage drive class-D monaural
|
Original
|
PDF
|
BD27400GUL
BD27400GUL
|
Untitled
Abstract: No abstract text available
Text: Datasheet Small-sized Class-D Speaker Amplifiers Filter-Less Class-D Monaural Speaker Amplifier BD27400GUL ●Key Specifications • Circuit current No signal ■ Circuit current(Stand by) ■ Output Power（RL=8Ω） ■ Output Power（RL=4Ω） ■ Start-up time
|
Original
|
PDF
|
BD27400GUL
BD27400GUL
|
Untitled
Abstract: No abstract text available
Text: Datasheet Small-sized Class-D Speaker Amplifiers Filter-Less Class-D Monaural Speaker Amplifier BD27400GUL ●Key Specifications • Circuit current No signal ■ Circuit current(Stand by) ■ Output Power（RL=8Ω） ■ Output Power（RL=4Ω） ■ Start-up time
|
Original
|
PDF
|
BD27400GUL
BD27400GUL
|
Untitled
Abstract: No abstract text available
Text: Datasheet Small-sized Class-D Speaker Amplifiers Filter-Less Class-D Monaural Speaker Amplifier BD27400GUL ●Key Specifications • Circuit current No signal ■ Circuit current(Stand by) ■ Output Power（RL=8Ω） ■ Output Power（RL=4Ω） ■ Start-up time
|
Original
|
PDF
|
BD27400GUL
BD27400GUL
|
DIM1600FSS17-A000
Abstract: No abstract text available
Text: DIM1600FSS17-A000 Single Switch IGBT Module DS5833-1.0 June 2005 FEATURES • 10µs Short Circuit Withstand • Non Punch Through Silicon • Isolated Copper Baseplate • Lead Free construction KEY PARAMETERS VCES VCE sat * (typ) IC (max) IC(PK) (max) (LN23957)
|
Original
|
PDF
|
DIM1600FSS17-A000
DS5833-1
LN23957)
DIM1600FSS17-A000
|
data sheet IC 7400
Abstract: IC 7400 datasheet information OF ic 7400 DIM1600FSM17-A000
Text: DIM1600FSM17- A000 Single Switch IGBT Module DS5455-3.2 August 2008 LN26327 FEATURES Isolated AlSiC Base with AIN Substrates KEY PARAMETERS VCES VCE (sat)* (typ) IC (max) IC(PK) (max) High Thermal Cycling Capability * 10µs Short Circuit Withstand Non Punch Through Silicon
|
Original
|
PDF
|
DIM1600FSM17-
DS5455-3
LN26327)
data sheet IC 7400
IC 7400 datasheet
information OF ic 7400
DIM1600FSM17-A000
|
IC 7400 datasheet
Abstract: data sheet 7400 IC data sheet IC 7400 internal circuit diagram of 7400 IC DIM600XSM45-F000 110nF
Text: Preliminary Data DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.0 October 2005 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability
|
Original
|
PDF
|
DIM600XSM45-F000
DS5874-1
LN24333)
IC 7400 datasheet
data sheet 7400 IC
data sheet IC 7400
internal circuit diagram of 7400 IC
DIM600XSM45-F000
110nF
|
Untitled
Abstract: No abstract text available
Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Preliminary Information DS5455-1.1 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
|
Original
|
PDF
|
DIM1600FSM17-A000
DS5455-1
DIM1600FSM17-A000
|
ge traction motor
Abstract: DIM600XSM45-F000
Text: DIM600XSM45-F000 Single Switch IGBT Module DS5874-1.1 August 2006 FEATURES • 10µs Short Circuit Withstand • Soft Punch Through Silicon • Lead Free construction • Isolated MMC Base with AlN Substrates • High Thermal Cycling Capability • High isolation module
|
Original
|
PDF
|
DIM600XSM45-F000
DS5874-1
LN24724)
ge traction motor
DIM600XSM45-F000
|
internal diagram of 7400 IC
Abstract: DIM1600FSM17-A000
Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces March 2002, version DS5455-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-2.1 May 2002
|
Original
|
PDF
|
DIM1600FSM17-A000
DS5455-2
2400y
internal diagram of 7400 IC
DIM1600FSM17-A000
|
DIM1600FSM17-A000
Abstract: DS5455-2
Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces May 2001, version DS5455-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-2.0 March 2002
|
Original
|
PDF
|
DIM1600FSM17-A000
DS5455-1
DS5455-2
DIM1600FSM17-A000
|
pin DIAGRAM OF IC 7400
Abstract: data sheet IC 7400 IC 7400 datasheet 12v to 1000v inverters circuit diagrams IC 7400 pin diagram bi-directional switches IGBT internal circuit diagram of 7400 IC internal diagram of 7400 IC us 7400 ic DIM1600FSM17-A000
Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces May 2002, version DS5455-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-3.1 July 2002
|
Original
|
PDF
|
DIM1600FSM17-A000
DS5455-2
DS5455-3
3300Varantee
pin DIAGRAM OF IC 7400
data sheet IC 7400
IC 7400 datasheet
12v to 1000v inverters circuit diagrams
IC 7400 pin diagram
bi-directional switches IGBT
internal circuit diagram of 7400 IC
internal diagram of 7400 IC
us 7400 ic
DIM1600FSM17-A000
|
DIM1600FSM17-A000
Abstract: No abstract text available
Text: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces May 2002, version DS5455-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-3.1 July 2002
|
Original
|
PDF
|
DIM1600FSM17-A000
DS5455-2
DS5455-3
3300Varantee
DIM1600FSM17-A000
|
|
|
MSM7731-02
Abstract: P-BGA313-3535-1 TBA 931 MsM82C59 MSM66 arm processor msm5299 SSOP20-P-250-0 QFJ28-P-S450-1 MSM65524A
Text: Datasheet CD-ROM Ver 1.23, July 1999 Bay of Islands, New Zealand Attention Please! People to People Technology 1. Regarding Operation • This is NOT a music CD. Please do not play it on an ordinary music CD player. It may cause damage to your ears and loudspeakers.
|
Original
|
PDF
|
270MB
ML670100
D-41460
MSM7731-02
P-BGA313-3535-1
TBA 931
MsM82C59
MSM66
arm processor
msm5299
SSOP20-P-250-0
QFJ28-P-S450-1
MSM65524A
|
NTE7232
Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
Text: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case
|
Original
|
PDF
|
NTE573â
201ADÂ
com/specs/500to599/pdf/nte573â
NTE639
214AAÂ
NTE7232
NTE2682
NTE2684
NTE7239
pdf/ES-F8DB-14A464-A
|
GA100NA60UP
Abstract: No abstract text available
Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
|
Original
|
PDF
|
GA100NA60UP
E78996
2002/95/EC
OT-227
11-Mar-11
GA100NA60UP
|
29070* intel
Abstract: No abstract text available
Text: 1.8 Volt Intel Wireless Flash Memory with 3-Volt I/O W30 28F640W30, 28F320W30, 28F128W30 Datasheet Product Features • High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed
|
Original
|
PDF
|
28F640W30,
28F320W30,
28F128W30
32-Mbit
64-Mbit
128-Mbit
29070* intel
|
application notes igbt induction heating
Abstract: VS-GA100NA60UP
Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
|
Original
|
PDF
|
VS-GA100NA60UP
E78996
2002/95/EC
OT-227
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
application notes igbt induction heating
VS-GA100NA60UP
|
VS-GA100NA60UP
Abstract: No abstract text available
Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
|
Original
|
PDF
|
VS-GA100NA60UP
E78996
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-GA100NA60UP
|
VS-GA100NA60UP
Abstract: No abstract text available
Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
|
Original
|
PDF
|
VS-GA100NA60UP
E78996
2002/95/EC
OT-227
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-GA100NA60UP
|
application notes igbt induction heating
Abstract: VS-GA100NA60UP
Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
|
Original
|
PDF
|
VS-GA100NA60UP
E78996
2002/95/EC
OT-227
11-Mar-11
application notes igbt induction heating
VS-GA100NA60UP
|
740-0007
Abstract: 29070* intel
Text: 1.8 Volt Intel Wireless Flash Memory with 3-Volt I/O W30 28F640W30, 28F320W30, 28F128W30 Datasheet Product Features • High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed
|
Original
|
PDF
|
28F640W30,
28F320W30,
28F128W30
32-Mbit)
64-Mbit)
128-Mbit)
740-0007
29070* intel
|
70L95
Abstract: 80L95 VC555 DM54365 DM54366 DM54367 DM54368 70L96 80L97
Text: ^ 2 Additional Devices D M 70/D M 8095, L95, 96, L96, 97, L97, 98, L98 TRI-STATE Hex Buffers www .Datasheet. i n General Description These devices provide six, two-input buffers in each pack age. Both the standard 7400 com patible TTL technology, and the “ true tenth-pow er" (74L com patible) low power ver
|
OCR Scan
|
PDF
|
DM70/DM8095,
DM70/80
70L95
80L95
VC555
DM54365
DM54366
DM54367
DM54368
70L96
80L97
|
