Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DATA SHEET TRANSISTOR 2N7002 Search Results

    DATA SHEET TRANSISTOR 2N7002 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation

    DATA SHEET TRANSISTOR 2N7002 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    702 TRANSISTOR smd

    Abstract: TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE dk 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 2N7002 PHILIPS MARKING TRANSISTOR SMD 702 G 702 transistor smd code SMD MARKING CODE TRANSISTOR 501 2N7002 SOT23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET 2N7002 N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor FEATURES 2N7002 QUICK REFERENCE DATA


    Original
    2N7002 SC13b SCA54 137107/00/01/pp12 702 TRANSISTOR smd TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE dk 702 TRANSISTOR smd SOT23 TRANSISTOR SMD 702 N 2N7002 PHILIPS MARKING TRANSISTOR SMD 702 G 702 transistor smd code SMD MARKING CODE TRANSISTOR 501 2N7002 SOT23 PDF

    ld smd transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Data sheet Product specification status 2N7002 N-channel vertical D-MOS transistor date of issue April 1995 FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION


    OCR Scan
    2N7002 ld smd transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR CURRENT 115 mAmp FEATURE Unit: inch mm SOT-23 N-channel enhancement mode field effect transistor,de- .007(.20) MIN. VOLTAGE 60 Volts .119(3.00) .110(2.80) .056(1.40) .047(1.20) signed for high speed pulse amplifier and drive applica-


    Original
    2N7002 OT-23 PDF

    transistor marking s72

    Abstract: transistor s72 Marking Code S72 s72 transistor transistor marking code s72 SOT-23 s72 sot 23 Transistor s72 sot23
    Text: DATA SHEET 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR CURRENT 200 mAmp FEATURE Unit: inch mm SOT-23 N-channel enhancement mode field effect transistor,de- .007(.20) MIN. VOLTAGE 60 Volts .119(3.00) .110(2.80) .056(1.40) .047(1.20) signed for high speed pulse amplifier and drive applica-


    Original
    2N7002 OT-23 transistor marking s72 transistor s72 Marking Code S72 s72 transistor transistor marking code s72 SOT-23 s72 sot 23 Transistor s72 sot23 PDF

    2N7002KA

    Abstract: No abstract text available
    Text: 2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible


    Original
    2N7002KA 2N7002KA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KA N-channel TrenchMOS FET Rev. 01 — 21 August 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible


    Original
    2N7002KA 2N7002KA PDF

    2N7002KA

    Abstract: No abstract text available
    Text: 2N7002KA N-channel TrenchMOS FET Rev. 02 — 25 September 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible


    Original
    2N7002KA O-236AB) 003aac036 2N7002KA PDF

    2N7002E

    Abstract: 2N7002-E3
    Text: 2N7002E N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original
    2N7002E mbb076 2N7002E 2N7002-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002E N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original
    2N7002E mbb076 2N7002E PDF

    03aa03

    Abstract: 2N7002-T1 2N7002T
    Text: 2N7002T N-channel TrenchMOS FET Rev. 01 — 17 November 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original
    2N7002T mbb076 2N7002T 03aa03 2N7002-T1 PDF

    03aa03

    Abstract: 2N7002-1 2N70021
    Text: 2N7002 N-channel TrenchMOS FET Rev. 05 — 15 November 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original
    2N7002 mbb076 2N7002 03aa03 2N7002-1 2N70021 PDF

    2n7002-1

    Abstract: 2N7002 PHILIPS PHILIPS 2N7002 MBB076 2N7002* application 2N7002 2N7002-03 HZG336 2n70020 2N70021
    Text: 2N7002 N-channel TrenchMOS FET Rev. 06 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original
    2N7002 mbb076 2N7002 2n7002-1 2N7002 PHILIPS PHILIPS 2N7002 MBB076 2N7002* application 2N7002-03 HZG336 2n70020 2N70021 PDF

    2N7002F

    Abstract: No abstract text available
    Text: 2N7002F N-channel TrenchMOS FET Rev. 02 — 9 May 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original
    2N7002F mbb076 2N7002F PDF

    2N7002F

    Abstract: 2N7002F_2
    Text: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original
    2N7002F mbb076 2N7002F 2N7002F_2 PDF

    2N7002F

    Abstract: No abstract text available
    Text: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original
    2N7002F mbb076 2N7002F 771-2N7002F-T/R PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original
    2N7002F mbb076 2N7002F PDF

    Untitled

    Abstract: No abstract text available
    Text: • Philips Semiconductors N bbSB'iai 0024136 4TT ■ I A P X AUER Data sheet status Product specification P H IL IP S /D IS C R E T E b?E ]> 2N7002 N-channel vertical D-MOS transistor date of issue April 1991 FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL,


    OCR Scan
    2N7002 OT23bbS3T31 MCB703 PDF

    smd transistor TO4

    Abstract: SMD Transistor 7e SMD SOT23 7E to4 smd smd to4 transistor DI 763 2N7002 phi ic87 2N7002 UBB073
    Text: • Philips Semiconductors Product specification date of issue April 1991 FEATUR ES • QDsmaa htt « apx N AUER PHILIPS/DISCRETE Data sheet status bbSB'm fc.7E D 2N7002 N-channei vertical D-MOS transistor QUICK R E F E R E N C E DATA Direct interface to C -M O S , TTL,


    OCR Scan
    2N7002 bb53T31 MCB702 smd transistor TO4 SMD Transistor 7e SMD SOT23 7E to4 smd smd to4 transistor DI 763 2N7002 phi ic87 2N7002 UBB073 PDF

    2N7002BK

    Abstract: 771-2N7002BK215 trench relay
    Text: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original
    2N7002BK O-236AB) AEC-Q101 771-2N7002BK215 2N7002BK trench relay PDF

    smd code marking WV

    Abstract: nxp p mosfet 2N7002P
    Text: 2N7002P 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original
    2N7002P O-236AB) AEC-Q101 2N7002P smd code marking WV nxp p mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original
    2N7002BK O-236AB) AEC-Q101 PDF

    2N7002BK

    Abstract: smd code marking WV
    Text: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original
    2N7002BK O-236AB) AEC-Q101 2N7002BK smd code marking WV PDF

    03aa03

    Abstract: 2N7002 SOT23 data sheet transistor 2n7002 philips 2n7002 2n7002 philips equivalent of 2N7002 2n7002-1 "Field Effect Transistor" 2N7002 equivalent 2N7002* application
    Text: 2N7002 N-channel TrenchMOS FET Rev. 04 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level threshold compatible


    Original
    2N7002 mbb076 03aa03 2N7002 SOT23 data sheet transistor 2n7002 philips 2n7002 2n7002 philips equivalent of 2N7002 2n7002-1 "Field Effect Transistor" 2N7002 equivalent 2N7002* application PDF

    1.4944

    Abstract: 2N7002E
    Text: 2N7002E N-channel TrenchMOS FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features • Logic level threshold compatible


    Original
    2N7002E mbb076 1.4944 2N7002E PDF