Untitled
Abstract: No abstract text available
Text: Data sheet. SAK Series KDKS1/EN LD 24 VAC Weidmüller Interface GmbH & Co. KG Klingenbergstraße 16 D-32758 Detmold Germany Fon: +49 5231 14-0 Fax: +49 5231 14-292083 www.weidmueller.com The fuse terminals of the Weidmüller SAK series are available in two different forms:
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D-32758
EC000899
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LD271 IR LED
Abstract: data sheet ld 271 OPTO LD 271 H LD271 APPLICATIONS LD271 remote control infrared remote switch IR LD271 ld 1.8 ld 18 LD271
Text: Opto Semiconductors GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 1.0 0.7 1.8 1.2 14.0 13.0 0.6 0.4 4.8 4.2 11.4 11.0 Cathode Chip position fex06628 1.3 1.0 2.54 mm spacing
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fex06628
GEX06239
GEO06645
OHR01041
OHR00257
OHR01879
LD271 IR LED
data sheet ld 271
OPTO LD 271 H
LD271 APPLICATIONS
LD271 remote control
infrared remote switch
IR LD271
ld 1.8
ld 18
LD271
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1550 nm CW Lasers
Abstract: Fujikura butterfly nm-1510 pump laser 14xx
Text: Preliminary Data Sheet August 2002 271-Type 14xx nm Pump Laser Module Description The 271-type pump laser module operates up to 200 mW and is designed as a continuous-wave CW optical pump source for DWDM erbium-doped fiber amplifiers and Raman applications.
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271-Type
DS02-347OCN
1550 nm CW Lasers
Fujikura butterfly
nm-1510
pump laser 14xx
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NX8350TSxx
Abstract: NX8350TS PX10160E 10 gb laser diode
Text: Preliminary Data Sheet NX8350TS LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION R08DS0025EJ0100 Rev.1.00 Sep 19, 2010 DESCRIPTION The NX8350TS is a 1 271 to 1 331 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser
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NX8350TS
R08DS0025EJ0100
NX8350TS
IEEE802
NX8350TSxx
PX10160E
10 gb laser diode
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adsl splitter dslam circuit diagram
Abstract: ADSL MODEM PROGRAMMING CX20441-11 DSAR-L100-511 schematic adsl modem board ADSL Modem circuit diagram LDPC encoder decoder ip core schematic diagram modem adsl BDP20 conexant
Text: AccessRunner ADSL-Ethernet/USB Modem Device Set Scalable, Discrete Multitone-based, T1.413 Issue 2, G.992.1 G.dmt , and G.992.2 (G.lite) ADSL Modem Device Set Data Sheet (Preliminary) Conexant Proprietary Information Doc. No. 100670A June 30, 2000 AccessRunner ADSL-Ethernet/USB Modem Device Set Data Sheet
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00670A
adsl splitter dslam circuit diagram
ADSL MODEM PROGRAMMING
CX20441-11
DSAR-L100-511
schematic adsl modem board
ADSL Modem circuit diagram
LDPC encoder decoder ip core
schematic diagram modem adsl
BDP20
conexant
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ADSL Modem circuit diagram of data communication
Abstract: ADSL modem schematics schematic adsl modem board ADSL Modem circuit diagram hc02 fairchild ADSL MODEM PROGRAMMING LDPC encoder decoder ip core HAD08 adsl splitter dslam circuit diagram p5200
Text: AccessRunner ADSL-USB Modem Device Set Scalable, Discrete Multitone-based, T1.413 Issue 2, G.992.1 G.dmt , and G.992.2 (G.lite) - Compliant ADSL Modem Device Set Data Sheet Conexant Proprietary Information Doc. No. 100427B May 4, 2000 AccessRunner ADSL-USB Modem Device Set Data Sheet
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100427B
ADSL Modem circuit diagram of data communication
ADSL modem schematics
schematic adsl modem board
ADSL Modem circuit diagram
hc02 fairchild
ADSL MODEM PROGRAMMING
LDPC encoder decoder ip core
HAD08
adsl splitter dslam circuit diagram
p5200
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Untitled
Abstract: No abstract text available
Text: TH7122 27 to 930MHz FSK/FM/ASK Transceiver Features 1 Single chip solution with only a few external components 1 Stand-alone fixed-frequency user mode 1 Programmable multi-channel user mode 1 Low current consumption in active mode and very low standby current
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TH7122
930MHz
ISO14001
June/12
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Untitled
Abstract: No abstract text available
Text: TH71221 27 to 930MHz FSK/FM/ASK Transceiver Features 1 3wire bus serial control interface 1 FSK/ASK mode selection 1 FSK for digital data or FM for analog signal reception 1 RSSI output for signal strength indication and ASK reception 1 Peak detector for ASK detection
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TH71221
930MHz
32-pin
ISO14001
Jul/12
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s50240
Abstract: S10430 keyer
Text: AMI * A S u b s id ia r y o f G o u ld Inc. Preliminary Data Sheet S10430 Features General Description □ □ □ □ □ □ □ □ T he S10430 divlder-keyer is a m o n o lith ic Integrated c ir c u it fab rica ted w ith P-C hannel ion-im planted M O S te ch
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S10430
S10430
S50240,
s50240
keyer
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Untitled
Abstract: No abstract text available
Text: F L A S H Io g ic Programmable Logic Device Family Data Sheet June 1996, ver. 2 Features. • ■ ■ H ig h -p erform an ce p ro g ram m ab le logic d ev ice P LD fam ily SR A M -based logic w ith sh ad ow FL A SH m em o ry elem ents fabricated on ad van ced C M O S tech nolog y
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VCC02
VCC05
EPX880
84-Pin
132-Pin
EPX8160
208-Pin
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K2479
Abstract: 2sk2479
Text: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR _ 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D ESCRIPTION T h e 2S K2479 is N -C h a n n e l M O S F ie ld E ffe c t T ra n s is to r d e s ig n e d f o r h ig h v o lta g e s w itc h in g a p p lic a tio n s .
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2SK2479
K2479
2sk2479
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Untitled
Abstract: No abstract text available
Text: Opto Semiconductors GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat Approx. weight 0.5 g Cathode 5.9 ' 5.5 . ri Q _ LO _ _ o .e 0.4 GE006645 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GE006645
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Untitled
Abstract: No abstract text available
Text: JANSR2N7408 Data Sheet Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 1998 File N um ber 4637 Features • 9A, 500V, rog oi\| = 0.600Q • Total Dose The Discrete Products Operation of Harris Semiconductor
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JANSR2N7408
FSF450R4,
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: FSYE430D, FSYE430R June 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor Communications Division has developed a series of Radiation Hardened MOSFETs specifically designed for
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FSYE430D,
FSYE430R
1-800-4-HARRIS
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1 L 0380 R
Abstract: No abstract text available
Text: FSYA150D, FSYA150R Semiconductor January 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSYA150D,
FSYA150R
1-800-4-HARRIS
1 L 0380 R
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eprom 2716
Abstract: 2716 JL 2716 eprom mcm2716 motorola 2716 3A11 MCM68A316E MMD6150 MMD7000 623A
Text: M O T O R O L A 2048 x 8-BIT UV ERASABLE PROM MOS N -C H A N N E L, S ILIC O N -G A TE The M CM 2716 is a 16,384-bit Erasable and Electrically Reprogram m able PR OM designed fo r system deb ug usage and s im ilar a pp iica tions requiring non vo la tile m em o ry th a t c o u ld be reprogram m ed periodically.
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MCM2716
MCM2716
384-bit
MCM2716.
eprom 2716
2716 JL
2716 eprom
motorola 2716
3A11
MCM68A316E
MMD6150
MMD7000
623A
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68A316E
Abstract: MCM2716
Text: M O TO R O LA 2048 x 8-BIT UV ERASABLE PROM MOS N -C H A N N E L, SILIC O N -G A TE T he M C M 2716 is a 16,384-bit Erasable and Electrically R eprogram m able PR OM designed fo r system deb ug usage and s im ilar a p p lica tions requiring non vo la tile m em o ry th a t co u ld be reprogram m ed periodically.
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384-bit
68A316E
MCM2716
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Untitled
Abstract: No abstract text available
Text: FSYA150D, FSYA150R S e m iconductor January 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSYA150D,
FSYA150R
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: FSJ9055D, FSJ9055R tfV W S Ju ly 1999 p O S S '^ fj|0 5 5 O Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSJ9055D,
FSJ9055R
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: FSL13A0D, FSL13A0R D ata S h eet 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a se ries of R adiation H a rd e n e d M O S F E T s specifically desig n ed for com m ercial and m ilitary s p a c e applications.
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FSL13A0D,
FSL13A0R
180J2
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: JANSR2N7407 S em iconductor Data Sheet Formerly Available As FSF254R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 1998 File N um ber 4636 Features • 18A, 250V, rog oi\| = 0.170Q • Total Dose The Discrete Products Operation of Harris Semiconductor
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JANSR2N7407
FSF254R4,
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: FSL23A0D, FSL23A0R D ata S h eet 6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs June 1999 F ile N u m b er 4476.2 Features • 6A , 2 0 0 V , rQg ONi = 0.350J2 • Total D ose T h e D iscrete Products O pe ra tio n of Harris Corporation,
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FSL23A0D,
FSL23A0R
350J2
1-800-4-HARRIS
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DO214AA
Abstract: SG-250 mount
Text: SGT Series Semiconductor February 1999 Data Sheet PRELIMINARY Surface Mount Surgector Transient Voltage Suppressors File Num ber 4632 Features The Harris S urgector fam ily has been extended to include a series of tw o-term inal surface mount devices as described
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1-800-4-HARRIS
DO214AA
SG-250 mount
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Untitled
Abstract: No abstract text available
Text: FSYA450D, FSYA450R Semiconductor March 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSYA450D,
FSYA450R
1-800-4-HARRIS
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