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    DATA 2N5401 Search Results

    DATA 2N5401 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    MP-52RJ11SNNE-100 Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-100 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 100ft Datasheet

    DATA 2N5401 Datasheets Context Search

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    2N5401

    Abstract: transistor 2N5401 2N5551 diodes inc diodes inc 2N5551 2N5400 2N5550 2N5551 2n5401 transistor of pnp transistor 2n5401 2N5401 TO-39
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5400; 2N5401 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 22 Philips Semiconductors Product specification PNP high-voltage transistors


    Original     		PDF M3D186 2N5400; 2N5401 2N5550 2N5551. MAM280 SCA54 117047/00/02/pp8 2N5401 transistor 2N5401 2N5551 diodes inc diodes inc 2N5551 2N5400 2N5551 2n5401 transistor of pnp transistor 2n5401 2N5401 TO-39

    2n5401 equivalent

    Abstract: No abstract text available
    Text: SHD426008 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 943, REV. - PNP SMALL SIGNAL TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N5401 Absolute Maximum Ratings* Symbol Parameter VCEO VCBO VEBO IC TJ, Tstg TA = 25°C unless otherwise noted


    Original     		PDF SHD426008 2N5401 2n5401 equivalent

    transistor 2N5401

    Abstract: 2N5401 2N5551 SC-43A 2n5401 transistor of pnp transistor 2n5401
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1999 Apr 08 2004 Oct 28 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current max. 300 mA


    Original     		PDF M3D186 2N5401 2N5551. MAM280 SCA76 R75/04/pp6 transistor 2N5401 2N5401 2N5551 SC-43A 2n5401 transistor of pnp transistor 2n5401

    2N5401

    Abstract: transistor 2N5401 diodes inc 2N5551 2N5551 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1997 May 22 1999 Apr 08 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current max. 300 mA


    Original     		PDF M3D186 2N5401 2N5551. MAM280 SCA63 115002/00/03/pp8 2N5401 transistor 2N5401 diodes inc 2N5551 2N5551 BP317

    2n5401 equivalent

    Abstract: transistor equivalent of 2N5401 transistor equivalent for 2N5401
    Text: SENSITRON SEMICONDUCTOR SHD431008 TECHNICAL DATA DATA SHEET 2040,REV. - SMALL SIGNAL TRANSISTOR - PNP Electrically Equivalent to 2N5401 DESCRIPTION: A SINGLE PNP SMALL SIGNAL TRANSISTOR IN A CERAMIC LCC-3 PACKAGE. MAXIMUM RATINGS RATING (ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED).


    Original     		PDF SHD431008 2N5401) 2n5401 equivalent transistor equivalent of 2N5401 transistor equivalent for 2N5401

    BC237

    Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
    Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53


    Original     		PDF 1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES 1999. 12. 22 Revision No : 2 1/2


    Original     		PDF 2N5401S

    MPQ6700 equivalent

    Abstract: 2N5458 equivalent BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor MPQ6700 NPN/PNP Silicon 14 13 12 11 10 9 8 1 2 3 4 5 MPQ6502 For Specifications, See MPQ6001 Data COMPLEMENTARY 6 7 MPQ6600A1 TYPE B For Specifications, See MPQ6100A Data MAXIMUM RATINGS


    Original     		PDF MPQ6700 MPQ6502 MPQ6001 MPQ6600A1 MPQ6100A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MPQ6700 equivalent 2N5458 equivalent BC237

    mpsa63 replace

    Abstract: BC237 MPSA63 equivalent J111
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol MPSA62 MPSA63 MPSA64 Unit


    Original     		PDF MPSA62 MPSA63 MPSA64 MPSA55, MPSA56 MPSA05, MPSA06 MPSA62 mpsa63 replace BC237 MPSA63 equivalent J111

    TRANSISTOR 2N5550

    Abstract: 2n5551 2N5551 DATA C2N5550 2N5400 2N5401 2N5550 SC-43A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1999 Apr 23 2004 Oct 28 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES


    Original     		PDF M3D186 2N5550; 2N5551 2N5400 2N5401. MAM279 SCA76 R75/04/pp7 TRANSISTOR 2N5550 2n5551 2N5551 DATA C2N5550 2N5401 2N5550 SC-43A

    diodes inc 2N5551

    Abstract: 2N555 2N5551 hz 9102 2N5400 2N5401 2N5550 BP317 C2N5550
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1997 Apr 09 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 PINNING


    Original     		PDF M3D186 2N5550; 2N5551 2N5400 2N5401. MAM279 SCA63 115002/00/03/pp8 diodes inc 2N5551 2N555 2N5551 hz 9102 2N5401 2N5550 BP317 C2N5550

    transistor equivalent 2n5551

    Abstract: diodes inc 2N5551 2N5551 2N5551 diodes inc transistor 2n5550 2N5551 circuit PO 903 str 6707 datasheet 2N5400 2N5401
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 09 Philips Semiconductors Product specification NPN high-voltage transistors


    Original     		PDF M3D186 2N5550; 2N5551 2N5400 2N5401. MAM27. SCA54 117047/00/02/pp8 transistor equivalent 2n5551 diodes inc 2N5551 2N5551 2N5551 diodes inc transistor 2n5550 2N5551 circuit PO 903 str 6707 datasheet 2N5401

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    2N5401

    Abstract: 2n5401 application
    Text: SEMICONDUCTOR 2N5401 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES ᴌHigh Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N E K ᴌLow Leakage Current. : ICBO=-50nA Max. @VCB=-120V


    Original     		PDF 2N5401 -160V, -150V -50nA -120V -50mA, -10mA, 100MHz 2N5401 2n5401 application

    2N5401C

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5401C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES ᴌHigh Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N E K ᴌLow Leakage Current. : ICBO=-50nA Max. @VCB=-120V


    Original     		PDF 2N5401C -160V, -150V -50nA -120V -50mA, -10mA, 100MHz 2N5401C

    2N5401

    Abstract: 1N914 2N5400
    Text: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage


    Original     		PDF 2N5400/D 2N5400 2N5401* 2N5400 2N5401 226AA) 2N5401 1N914

    2N5401

    Abstract: 2N5400 motorola 1N914 diode datasheet transistor 2N5401 1N914 2N5400 MOTOROLA 2N5401 MOTOROLA
    Text: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage


    Original     		PDF 2N5400/D 2N5400 2N5401* 2N5400 2N5401 2N5400/D* 2N5401 motorola 1N914 diode datasheet transistor 2N5401 1N914 2N5400 MOTOROLA 2N5401 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5401 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES ・High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N E K ・Low Leakage Current. G : ICBO=-50nA Max. @VCB=-120V


    Original     		PDF 2N5401 -160V, -150V -50nA -120V -50mA, 150itter -120V, -10mA

    2N5401C

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KEC KOREA ELECTRONICS CO.,LTD. 2N5401C EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : V Cbo=-160V , V Ceo = -150V • Low Leakage Current.


    OCR Scan     		PDF 2N5401C -160V, -150V -50nA -120V -50mA, -10J/A, -10mA -50mA -10mA, 2N5401C

    2N5401

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N5401 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : V Cbo= -160V , V Ceo= -150V • Low Leakage Current. : IcBo=-50nA Max. , @ VCb= -120V


    OCR Scan     		PDF 2N5401 -160V, -150V -50nA -50mA, -10JUA, -10mA -50mA -10mA, 2N5401

    str g 5551

    Abstract: str G 5551 47 transistor cc 5551 transistor 2n5401 2n5401 philips a/STR/LH/8/str g 5551
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 2N5401 PNP high-voltage transistor 1999 Apr 08 Product specification Supersedes data of 1997 May 22 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor 2N5401


    OCR Scan     		PDF 2N5401 2N5401 115002/00/03/pp8 str g 5551 str G 5551 47 transistor cc 5551 transistor 2n5401 2n5401 philips a/STR/LH/8/str g 5551

    transistor 2N5401

    Abstract: 2N5401 marking xa 2N5401 vishay DS11205
    Text: 2N5401 PNP GENERAL PURPOSE TRANSISTOR Features High Collector-Emitter Breakdown Voltage Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Designed for General Purpose Amplifier and Switch Applications hH TO-92 Mechanical Data


    OCR Scan     		PDF 2N5401 MIL-STD-202, 2N5401 -10mA, -50mA, 100MHz transistor 2N5401 marking xa 2N5401 vishay DS11205

    2N5401S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N5401S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : V cbo=-160V, V CEo=-150V •3 MAXIMUM RATINGS Ta=25°C RATING UNIT Collector-Base Voltage


    OCR Scan     		PDF 2N5401S -160V, -150V -50mA, -10j/A, -10mA -50mA -10mA, 2N5401S