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    DARLINGTON TRANSISTOR SOT223 5A Search Results

    DARLINGTON TRANSISTOR SOT223 5A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DARLINGTON TRANSISTOR SOT223 5A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT603 ISSUE 3 – NOVEMBER 1995 FEATURES * 2A continuous current * Useful hFE up to 6A * Fast Switching C E PARTMARKING DETAIL – DEVICE TYPE IN FULL C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


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    PDF OT223 FZT603 100ms

    FZT603

    Abstract: fzt603 transistor Darlington Silicon Power Transistor fzt603 DSA003711
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT603 PACKAGE OUTLINE DETAILS Dim A Millimeters Inches Min Max Min Max 6.3 6.7 0.248 0.264 B 3.3 3.7 0.130 0.146 C – 1.7 – 0.067 D 0.6 0.8 0.024 0.031 E 2.9 3.1 0.114 0.122 F 0.24 0.32 0.009 0.013


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    PDF OT223 FZT603 300ms. 100ms FZT603 fzt603 transistor Darlington Silicon Power Transistor fzt603 DSA003711

    darlington transistor sot223 5A

    Abstract: No abstract text available
    Text: CZT122 SOT-223 Transistor NPN 1. BASE 1 SOT-223 2. COLLECTOR 3. EMITTER Features — Complementary to CZT127 — Silicon Power Darlington Transistors — Low speed switching and amplifier applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


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    PDF CZT122 OT-223 OT-223 CZT127 darlington transistor sot223 5A

    Untitled

    Abstract: No abstract text available
    Text: CZT127 SOT-223 Transistor PNP 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features — Complementary to CZT122 — Silicon Power Darlington Transistors — Low speed switching and amplifier applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


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    PDF CZT127 OT-223 OT-223 CZT122 -20mA -12mA -30mA -100V

    ja smd

    Abstract: CZT127 KZT127
    Text: Transistors IC SMD Type Surface Mount PNP Silicon Power Darlington Transistor KZT127 CZT127 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 5A). +0.2


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    PDF KZT127 CZT127) OT-223 -30mA -20mA ja smd CZT127 KZT127

    smd npn darlington

    Abstract: CZT122 KZT122
    Text: Transistors IC SMD Type Surface Mount NPN Silicon Power Darlington Transistor KZT122 CZT122 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 High current (max. 5A). Low voltage (max. 100V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2


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    PDF KZT122 CZT122) OT-223 smd npn darlington CZT122 KZT122

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT127 SOT-223 TRANSISTOR PNP FEATURES z Complementary to CZT122 z Silicon Power Darlington Transistors z Low speed switching and amplifier applications 1. BASE 2. COLLECTOR


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    PDF OT-223 CZT127 OT-223 CZT122 -30mA -100V -12mA -20mA

    CZT122

    Abstract: CZT127
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT127 SOT-223 TRANSISTOR PNP FEATURES 1 z Complementary to CZT122 z Silicon Power Darlington Transistors z Low speed switching and amplifier applications 1. BASE


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    PDF OT-223 CZT127 OT-223 CZT122 -30mA -100V -12mA -20mA CZT122 CZT127

    Zener Diode 3v 400mW

    Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
    Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –


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    PDF DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998

    CZT122

    Abstract: CZT127 darlington transistor sot223 5A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT122 SOT-223 TRANSISTOR NPN 1 FEATURES z Complementary to CZT127 z Silicon Power Darlington Transistors z Low speed switching and amplifier applications 1. BASE


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    PDF OT-223 CZT122 OT-223 CZT127 CZT122 CZT127 darlington transistor sot223 5A

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors CZT122 SOT-223 TRANSISTOR NPN FEATURES z Complementary to CZT127 z Silicon Power Darlington Transistors z Low speed switching and amplifier applications 1. BASE 2. COLLECTOR


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    PDF OT-223 CZT122 OT-223 CZT127

    2N2907 PNP Transistor to 92

    Abstract: pnp marking 3W 2224B 1N4148 75V 150mA Diodes 2N2907 PNP Transistor 2n2907 TRANSISTOR PNP LT1123 LT1123CST LT1123CZ MJE1123
    Text: LT1123 Low Dropout Regulator Driver U FEATURES DESCRIPTIO The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,


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    PDF LT1123 125mA LT1083/4/5 25VREF LT1117 800mA OT-223 LT1121 2N2907 PNP Transistor to 92 pnp marking 3W 2224B 1N4148 75V 150mA Diodes 2N2907 PNP Transistor 2n2907 TRANSISTOR PNP LT1123 LT1123CST LT1123CZ MJE1123

    2224B

    Abstract: 016W LT1123 LT1123CST LT1123CZ MJE1123 RUR67B1CB TA03 2N2907 PNP Transistor to 92 TRANSISTOR pnp 0.15W
    Text: LT1123 Low Dropout Regulator Driver U FEATURES • DESCRIPTIO The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,


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    PDF LT1123 125mA LT1083/4/5 25VREF LT1117 800mA OT-223 LT1121 2224B 016W LT1123 LT1123CST LT1123CZ MJE1123 RUR67B1CB TA03 2N2907 PNP Transistor to 92 TRANSISTOR pnp 0.15W

    Untitled

    Abstract: No abstract text available
    Text: LT1123 Low Dropout Regulator Driver FEATURES DESCRIPTIO U The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,


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    PDF LT1123 125mA LT1083/4/5 25VREF LT1117 800mA OT-223 LT1121

    QM5HL-24

    Abstract: 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V
    Text: Next W M.T O .C Semiconductors00-YDiscretes W 1 M.T . O W C W WW .100Y. M.T O W .C ZTX~Series Transistors .TW W product Detailed Ware available on: us. 100y. com. tw W 00Y specifications 1 M.T . M O W O C . .C WW .1Pol00YIc max Part No. Product No. Manufacturer


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    PDF 10silicon ZTX653 3P/TO-92 NPN00Y ZTX689B ZTX690B NPN100Y AT-31033-TR1 QM5HL-24 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V

    Motorola transistor smd marking codes

    Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
    Text: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases


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    PDF OT-89 OT-223 C-120, 2001MD, Motorola transistor smd marking codes SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d

    Darlington Silicon Power Transistor fzt603

    Abstract: darlington transistor sot223 5A LC-04A
    Text: SOT223 NPN SILICON PLANAR M EDIU M POWER DARLINGTON TRANSISTOR ISSUE 3 -NOVEMBER 1995_ FEATURES * 2 A continuous current * Useful hFE up to 6 A * Fast Sw itching P A R T M A R K IN G D ETA IL - DEVIC E TY PE IN FULL ABSOLUTE M A X IM U M RATINGS.


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    PDF OT223 100mA, 20MHz 500mV, 300ms. FZT603 Darlington Silicon Power Transistor fzt603 darlington transistor sot223 5A LC-04A

    Untitled

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 3 -N O V E M B E R 1995_ FEATURES * 2 A continuous current * Useful hFE up to 6 A * Fast Sw itching P A R T M A R K IN G D ET A IL - DEVIC E TY PE IN FU LL ABSOLUTE M A X IM U M RATINGS.


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    PDF OT223 20MHz 500mV, 300ms. 00CH3b7

    EZ 532

    Abstract: lm2576 spice
    Text: m r 5V to 3.3V Power Conversion Solutions TEL: 805-498-2111 APPLICATION NOTE FAX: 805-498-3804 Introduction With more and more digital systems needing 3.3 VDC power, we at Semtech felt that you, our customer, needed to know your options - both in the linear and the switching


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    PDF

    2d SMD PNP TRANSISTOR

    Abstract: NB ad smd transistor 1ff TRANSISTOR SMD MARKING CODE SMD MARKING CODE FE sot89 H1 SOT-89 transistor rf smd transistor 5c sot-23 BC548 TRANSISTOR SMD TRANSISTOR Marking XB SOT-89 TRANSISTOR BC337 SMD smd dual diode marking code AH sot-23
    Text: CENTRAL SEMICONDUCTOR 50E D nñnb3 CEN D D D Q S l l 3Gb SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW TYPE NO. CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 CMPT3906 CMPT4401 CMPT4403 CMPT5086 CMPT5087 CMPT5088


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    PDF DGDQS11 OT-23 350mW cmpt918 2n918 cmpt2222a 2n2222a cmpt2369 2n2369 cmpt2484 2d SMD PNP TRANSISTOR NB ad smd transistor 1ff TRANSISTOR SMD MARKING CODE SMD MARKING CODE FE sot89 H1 SOT-89 transistor rf smd transistor 5c sot-23 BC548 TRANSISTOR SMD TRANSISTOR Marking XB SOT-89 TRANSISTOR BC337 SMD smd dual diode marking code AH sot-23

    1ff TRANSISTOR SMD MARKING CODE

    Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
    Text: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369


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    PDF DDDQS11 OT-23 350mW CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 1ff TRANSISTOR SMD MARKING CODE smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p

    TRANSISTOR NPN BA RV SOT - 89

    Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
    Text: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes


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    PDF CQ89N CQ89DS CQ89MS CQ89NS OT-89 CMPSS061 CMPS5062 CMPS5063 CMPS5064 CZS5064 TRANSISTOR NPN BA RV SOT - 89 bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124

    CMPZ4124

    Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
    Text: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches


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    PDF OT-23 350mW CMPT8099 CMPT2222A OT-23 OT-223 OT-89 CQ89D CQ89DS CMPS5061 CMPZ4124 CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


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    PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn