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    DARLINGTON TRANSISTOR MPSA14 Search Results

    DARLINGTON TRANSISTOR MPSA14 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DARLINGTON TRANSISTOR MPSA14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSA14 Preliminary NPN SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC MPSA14 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: Pc maX = 625mW „ ORDERING INFORMATION


    Original     		PDF MPSA14 MPSA14 625mW MPSA14L-AB3-R MPSA14G-AB3-R MPSA14L-T92-K MPSA14G-T92-K MPSA14L-T92-B MPSA14G-T92-B OT-89

    MPSA14

    Abstract: TRANSISTOR 077 equivalent mpsa14 NPN Transistor 5V DARLINGTON
    Text: UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)


    Original     		PDF MPSA14 QW-R201-054 TRANSISTOR 077 equivalent mpsa14 NPN Transistor 5V DARLINGTON

    MPSA14

    Abstract: MPSA64 SC-43A darlington transistor MPSA14
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA14 NPN Darlington transistor Product specification Supersedes data of 2004 Aug 20 2005 May 04 Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA


    Original     		PDF M3D186 MPSA14 MPSA64. MAM252 SCA76 R75/07/pp6 MPSA14 MPSA64 SC-43A darlington transistor MPSA14

    npn darlington

    Abstract: MPS-A14
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA14 NPN Darlington transistor Product specification Supersedes data of 1997 Apr 24 1999 Apr 27 Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA


    Original     		PDF M3D186 MPSA14 MPSA64. MAM252 SCA63 115002/00/04/pp8 npn darlington MPS-A14

    equivalent mpsa14

    Abstract: MPSa14 equivalent MPSA14 transistor darlington
    Text: UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. 1 FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)


    Original     		PDF MPSA14 OT-89 QW-R208-008 equivalent mpsa14 MPSa14 equivalent transistor darlington

    mpsa14

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA14 NPN Darlington transistor Product specification Supersedes data of 1999 Apr 27 2003 Oct 22 Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA


    Original     		PDF M3D186 MPSA14 MPSA14 MPSA64. MAM252 SCA75 R75/05/pp6

    MPSA14

    Abstract: transistor 625
    Text: UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. 1 FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)


    Original     		PDF MPSA14 OT-89 100mA 100mA 100MHz QW-R208-008 transistor 625

    MPSA14

    Abstract: MPSA42 SC-43A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA14 NPN Darlington transistor Product specification Supersedes data of 2003 Oct 22 2004 Aug 20 Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • Low current max. 100 mA


    Original     		PDF M3D186 MPSA14 MPSA42. MAM280 SCA76 R75/06/pp6 MPSA14 MPSA42 SC-43A

    ST 9336

    Abstract: all transistor book Philips TO-92 MARKING CODE W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA64 PNP Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 27 Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING • Low current max. 500 mA


    Original     		PDF M3D186 MPSA64 MPSA64 MPSA14. MAM253 01-May-99) ST 9336 all transistor book Philips TO-92 MARKING CODE W

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA64 PNP Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 27 Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING • Low current max. 500 mA


    Original     		PDF M3D186 MPSA64 MPSA14. MAM253 SCA63 115002/00/04/pp8

    MPSA14

    Abstract: MPSA64 SC-43A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA64 PNP Darlington transistor Product specification Supersedes data of 1999 Apr 27 2004 Oct 11 Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING • Low current max. 500 mA


    Original     		PDF M3D186 MPSA64 MPSA14. MAM253 SCA76 R75/05/pp6 MPSA14 MPSA64 SC-43A

    MPSA13

    Abstract: MPSA14 MMBTA14 MMBTA13
    Text: MPSA13 and MPSA14 Vishay Semiconductors New Product formerly General Semiconductor Darlington Transistors NPN Collector TO-226AA (TO-92) Base 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Emitter Features • NPN Silicon Darlington Transistor for


    Original     		PDF MPSA13 MPSA14 O-226AA OT-23 MMBTA13 MMBTA14 20K/box MPSA13 MPSA14 MMBTA14 MMBTA13

    MPSA14

    Abstract: MPSA13 MMBTA13 MMBTA14 current amplifier note darlington MPSA13 darlington
    Text: MPSA13 and MPSA14 ct u d ro P New Darlington Transistors NPN Collector Base TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Emitter Features • NPN Silicon Darlington Transistor for switching and amplifier applications. • High collector current


    Original     		PDF MPSA13 MPSA14 O-226AA OT-23 MMBTA13 MMBTA14 MPSA13 MPSA14 MMBTA13 MMBTA14 current amplifier note darlington MPSA13 darlington

    MPSA13

    Abstract: MPS-A13 MPSA14
    Text: MPSA13 / 14 NPN Silicon Epitaxial Planar Transistors for general purpose applications, darlington transistor. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF MPSA13 100mA 100Adc 100mA, 100MHz MPS-A13 MPSA14

    MPSA13

    Abstract: MPS-A13 MPSA14
    Text: MPSA13 / 14 NPN Silicon Epitaxial Planar Transistors for general purpose applications, darlington transistor. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF MPSA13 100mA 100Adc 100mA, 100MHz MPS-A13 MPSA14

    MPSA13

    Abstract: MPSA14 MPS-A13
    Text: MPSA13 / 14 NPN Silicon Epitaxial Planar Transistors for general purpose applications, darlington transistor. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF MPSA13 100mA 100Adc 100mA, 100MHz MPSA14 MPS-A13

    SILICON TRANSISTOR CORP

    Abstract: transistor CHIP TRANSISTOR CP307 ny transistor ELECTRONIC TRANSISTOR CORP equivalent mpsa14 mpsa14 MPSa14 equivalent 2N6426
    Text: PROCESS CP307 Central Small Signal Transistor TM Semiconductor Corp. NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area


    Original     		PDF CP307 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CXTA14 CZTA14 MPSA13 MPSA14 SILICON TRANSISTOR CORP transistor CHIP TRANSISTOR CP307 ny transistor ELECTRONIC TRANSISTOR CORP equivalent mpsa14 mpsa14 MPSa14 equivalent 2N6426

    MPSA13

    Abstract: MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14
    Text: Central TM Semiconductor Corp. PROCESS CP307 Small Signal Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area


    Original     		PDF CP307 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CXTA14 CZTA14 MPSA13 MPSA14 MPSA13 MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS MPSA14 NPN Darlington transistor 1999 Apr 27 Product specification Supersedes data of 1997 Apr 24 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING


    OCR Scan     		PDF MPSA14 MPSA14 MPSA64. 115002/00/04/pp8

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS MPSA64 PNP Darlington transistor 1999 Apr 27 Product specification Supersedes data of 1997 Apr 23 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING


    OCR Scan     		PDF MPSA64 MPSA64 MPSA14. 115002/00/04/pp8

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC IME 0 § 7tì t m 4 2 0 00 73 50 7 | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA14 T-29-29 DARLINGTON TRANSISTOR TO-92 • Collector-Emttter Voltage: Vct»= 30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF MPSA14 T-29-29 625mW 2N6427

    mpsd04

    Abstract: RXTA14 mpsa14 die SSTA14
    Text: □IE No. NPN Darlington TRANSISTOR DIE No. •MAXIMUM RATINGS T A=25°C Free Air Parameter D— 25 ■ DESCRIPTION EPITAXIAL PLANAR NPN SILICON TRANSISTOR (DARLINGTON) Symbol Value Unit Collector-Emitter Voltage VcEO 30 V Collector-Base Voltage VcBO 40


    OCR Scan     		PDF MPSA14 500mW 100aA MPS-A26 MPS-D04 mpsd04 RXTA14 mpsa14 die SSTA14

    Untitled

    Abstract: No abstract text available
    Text: MPSA14 SEM ICONDUCTOR FORW ARD INTERNATIONAL ELECTRONICS LTD, TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR Collector-Rrntter Voltage : Vces=30V Collector Dissipation: Pc rnax =625mW ABSOLUTE MAXIMUM RATINGS a t Tam b=25'c Symbol Rating


    OCR Scan     		PDF MPSA14 625mW 300uS 100uA 100mA 100mA

    MPS A13 transistor

    Abstract: MPS A13 MPS-A13 MPS-A13-14 MPSA13 MPSA14
    Text: MPSA13/14 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CES 30 V


    OCR Scan     		PDF A13/14 1000IB MPS A13 transistor MPS A13 MPS-A13 MPS-A13-14 MPSA13 MPSA14