DARLINGTON NPN 90V Search Results

DARLINGTON NPN 90V Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

DARLINGTON NPN 90V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
darlington npn 90v Abstract: No abstract text available Text: NTE2426 NPN & NTE2427 (PNP) Silicon Complementary Transistors Darlington Switch Description: The NTE2426 and NTE2427 are silicon planer Darlington transistors in a SOT–89 type surface mount package designed for use in industrial switching applications such as print hammer, solenoid, relay,	Original	NTE2426 NTE2427 NTE2426 NTE2427 500mA, darlington npn 90v	PDF
NPN transistor Ic 50A Abstract: darlington transistor 90v darlington npn 90v MJ11030 MJ11031 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11031	Original	MJ11031 250mA 500mA NPN transistor Ic 50A darlington transistor 90v darlington npn 90v MJ11030 MJ11031	PDF
darlington npn 90v Abstract: darlington transistor 90v transistor 20a MJ11013 MJ11014 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage: VCE (sat)= 3.0V(Max.)@ IC= 20A	Original	MJ11013 darlington npn 90v darlington transistor 90v transistor 20a MJ11013 MJ11014	PDF
darlington npn 90v Abstract: darlington transistor 90v MJ11014 Text: NPN MJ11014 SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)	Original	MJ11014 darlington npn 90v darlington transistor 90v MJ11014	PDF
2SB1501 Abstract: 2SD2274 1-10V current sink Text: Power Transistors 2SD2274 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1501 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage VCEO 90 V Emitter to base voltage	Original	2SD2274 2SB1501 2SB1501 2SD2274 1-10V current sink	PDF
transistor mj11028 equivalent Abstract: MJ11033 MJ11032 darlington 300w transistor mj11032 equivalent MJ11028 MJ11029 300w amplifier darlington npn 90v MJ11031 Text: SEME LAB MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.187 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A	Original	MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 TEMPJ11033 100mA transistor mj11028 equivalent MJ11033 MJ11032 darlington 300w transistor mj11032 equivalent MJ11028 MJ11029 300w amplifier darlington npn 90v MJ11031	PDF
SDM3303 Abstract: SL 100 NPN Transistor base emitter collector 2N6350 SDM3103 transistor c35 equivalent NPN Transistor VCEO 80V 100V DARLINGTON Text: -JSutron Devices. Inc. MEDIUM VOLTAGE, FAST SWITCHING, HIGH GAIN MONOLITHIC NPN EPITAXIAL PLANAR POWER DARLINGTON TRANSISTOR*« FORMERLY 03] CHIP NUMBER dTI CONTACT METALLIZATION A Base and emitter: > 30,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver'' also available	OCR Scan	203mm) O-66/3 SDM3303 SL 100 NPN Transistor base emitter collector 2N6350 SDM3103 transistor c35 equivalent NPN Transistor VCEO 80V 100V DARLINGTON	PDF
2SD2604 Abstract: 5001T Text: TOSHIBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 i .-03.2 ±0.2 - 2.7±Q.2	OCR Scan	2SD2604 2SD2604 5001T	PDF
2SD1891 Abstract: 2SB1251 Text: Power Transistors 2SD1891 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1251 Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage	Original	2SD1891 2SB1251 2SD1891 2SB1251	PDF
2SD2604 Abstract: No abstract text available Text: TO SH IBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ± 0.3 . 03.2 ± 0.2 2.7±Q.2 High DC Current Gain : —2000 (Min.)	OCR Scan	2SD2604 2SD2604	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 . Ç&3.2 ±0.2 -j I.- 2.7±0-2	OCR Scan	2SD2604 100/zs^	PDF
Untitled Abstract: No abstract text available Text: Power Transistors 2SD2274 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1501 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 3.0 20.0±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage	Original	2SD2274 2SB1501	PDF
Untitled Abstract: No abstract text available Text: S EM E LA B MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.18 7 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A	Original	MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 MJ11028 MJ11030 MJ11029	PDF
Untitled Abstract: No abstract text available Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN DARLINGTON HIGH POWER	Original	MIL-PRF-19500/624 2N7370 O-254AA) T4-LDS-0208	PDF

Untitled Abstract: No abstract text available Text: 8368602 SOLITRON DEVICES _ At 8 6 D 02 55 0 INC »F\|ñ3bñbDS 00D2S50 7 - 35 ~ 33 ELEMENT NUMBER 3 MEDIUM VOLTAGE, FAST SWITCHING MONOLITHIC NPN EPITAXIAL PLANAR POWER DARLINGTON TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 3 0 ,0 0 0 A Aluminum	OCR Scan	00D2S50 203mm) 40MHz 40MHz SDM3303; SDM3103	PDF
1225 transistor 09 d Abstract: No abstract text available Text: T O SH IB A 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : lipE —2000 (Min.) Low Saturation Voltage : V q £ (sat) = l*5V (Max.)	OCR Scan	2SD2604 1225 transistor 09 d	PDF
Untitled Abstract: No abstract text available Text: Power Transistors 2SD1891 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1251 Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage	Original	2SD1891 2SB1251	PDF
2SD2604 Abstract: No abstract text available Text: TO SH IBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS . 03.2 ±0.2 2.7±Q.2 High DC Current Gain : —2000 (Min.) Low Saturation Voltage : Vç;e (sat) = 1.5V (Max.)	OCR Scan	2SD2604 2SD2604	PDF
MMBD2104 Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932 Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a	Original	BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932	PDF
MMBD2103 Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.	Original	BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N	PDF
SMD Codes Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101 Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.	Original	BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101	PDF
marking codes transistors sot-223 Abstract: FD MARKING CODE SOT23 SMD marking CODE 2U sot-89 marking code SOT89 smd marking 13 npn Darlington SOT23 marking 1m sot 223 marking code 01 SMD CODE PACKAGE SOT89 smd sot-89 marking code sot-223 code marking Text: SMD DARLINGTON TRANSISTORS DESCRIPTION •Philips Components Darlington transistors provide high input impedance and thus high gain by virtue of two series-integrated transistors on a single chip. High current versions are excellent for industrial switching applications	OCR Scan	OT-89 OT-223 BST62 PMBT6427 PMBTA13 PMBTA14 PMBTA63 PMBTA64 BSP62 BST50 marking codes transistors sot-223 FD MARKING CODE SOT23 SMD marking CODE 2U sot-89 marking code SOT89 smd marking 13 npn Darlington SOT23 marking 1m sot 223 marking code 01 SMD CODE PACKAGE SOT89 smd sot-89 marking code sot-223 code marking	PDF
TRANSISTOR BDX Abstract: TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184 Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BUW 4ff 30 A BUW 49 20 A BUX 69 IS A J/T	OCR Scan	BUV48 BUV47 O-22CIAB CB-117 BUV37 CB-244 CB-285 TRANSISTOR BDX TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184	PDF
PXTA14 Abstract: PMBTA64 BST60 BST62 PMBTA14 PMBTA13 BST50 Text: SM D DARLINGTON TRANSISTORS DESCRIPTION • Philips Components Darlington transistors provide high input impedance and thus high gain by virtue of two series-integrated transistors on a single chip. High current versions are excellent for industrial switching applications	OCR Scan	OT-89 PXTA64 PZTA13 PZTA14 PZTA63 PZTA64 OT-23 OT-89 OT-223 PXTA14 PMBTA64 BST60 BST62 PMBTA14 PMBTA13 BST50	PDF

DARLINGTON NPN 90V Search Results

DARLINGTON NPN 90V Result Highlights (5)

DARLINGTON NPN 90V Datasheets Context Search

darlington npn 90v

NPN transistor Ic 50A

darlington npn 90v

darlington npn 90v

2SB1501

transistor mj11028 equivalent

SDM3303

2SD2604

2SD1891

2SD2604

Untitled

Untitled

Untitled

Untitled

Untitled

1225 transistor 09 d

Untitled

2SD2604

MMBD2104

MMBD2103

SMD Codes

marking codes transistors sot-223

TRANSISTOR BDX

PXTA14