Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DARLINGTON NPN 90V Search Results

    DARLINGTON NPN 90V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    ULS2003H/R Rochester Electronics LLC ULS2003 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ULS2022R/B Rochester Electronics LLC ULS2022 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy

    DARLINGTON NPN 90V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    darlington npn 90v

    Abstract: No abstract text available
    Text: NTE2426 NPN & NTE2427 (PNP) Silicon Complementary Transistors Darlington Switch Description: The NTE2426 and NTE2427 are silicon planer Darlington transistors in a SOT–89 type surface mount package designed for use in industrial switching applications such as print hammer, solenoid, relay,


    Original     		PDF NTE2426 NTE2427 NTE2426 NTE2427 500mA, darlington npn 90v

    NPN transistor Ic 50A

    Abstract: darlington transistor 90v darlington npn 90v MJ11030 MJ11031
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= 90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to Type MJ11031


    Original     		PDF MJ11031 250mA 500mA NPN transistor Ic 50A darlington transistor 90v darlington npn 90v MJ11030 MJ11031

    darlington npn 90v

    Abstract: darlington transistor 90v transistor 20a MJ11013 MJ11014
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 90V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage: VCE (sat)= 3.0V(Max.)@ IC= 20A


    Original     		PDF MJ11013 darlington npn 90v darlington transistor 90v transistor 20a MJ11013 MJ11014

    darlington npn 90v

    Abstract: darlington transistor 90v MJ11014
    Text: NPN MJ11014 SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C)


    Original     		PDF MJ11014 darlington npn 90v darlington transistor 90v MJ11014

    2SB1501

    Abstract: 2SD2274 1-10V current sink
    Text: Power Transistors 2SD2274 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1501 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage VCEO 90 V Emitter to base voltage


    Original     		PDF 2SD2274 2SB1501 2SB1501 2SD2274 1-10V current sink

    transistor mj11028 equivalent

    Abstract: MJ11033 MJ11032 darlington 300w transistor mj11032 equivalent MJ11028 MJ11029 300w amplifier darlington npn 90v MJ11031
    Text: SEME LAB MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.187 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A


    Original     		PDF MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 TEMPJ11033 100mA transistor mj11028 equivalent MJ11033 MJ11032 darlington 300w transistor mj11032 equivalent MJ11028 MJ11029 300w amplifier darlington npn 90v MJ11031

    2SD1891

    Abstract: 2SB1251
    Text: Power Transistors 2SD1891 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1251 Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage


    Original     		PDF 2SD1891 2SB1251 2SD1891 2SB1251

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2274 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1501 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 3.0 20.0±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage


    Original     		PDF 2SD2274 2SB1501

    Untitled

    Abstract: No abstract text available
    Text: S EM E LA B MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.18 7 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A


    Original     		PDF MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 MJ11028 MJ11030 MJ11029

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN DARLINGTON HIGH POWER


    Original     		PDF MIL-PRF-19500/624 2N7370 O-254AA) T4-LDS-0208

    Untitled

    Abstract: No abstract text available
    Text: S EM E LA B MECHANICAL DATA Dimensions in mm inches NPN PNP MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 COMPLEMENTARY DARLINGTON POWER TRANSISTOR 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) 30 .15 (1.18 7 ) FEATURES 1 • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A


    Original     		PDF MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 100mA 250mA

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1891 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1251 Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V Collector to emitter voltage


    Original     		PDF 2SD1891 2SB1251

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


    Original     		PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SDM3303

    Abstract: SL 100 NPN Transistor base emitter collector 2N6350 SDM3103 transistor c35 equivalent NPN Transistor VCEO 80V 100V DARLINGTON
    Text: -JSutron Devices. Inc. MEDIUM VOLTAGE, FAST SWITCHING, HIGH GAIN MONOLITHIC NPN EPITAXIAL PLANAR POWER DARLINGTON TRANSISTOR*« FORMERLY 03] CHIP NUMBER dTI CONTACT METALLIZATION A Base and emitter: > 30,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver'' also available


    OCR Scan     		PDF 203mm) O-66/3 SDM3303 SL 100 NPN Transistor base emitter collector 2N6350 SDM3103 transistor c35 equivalent NPN Transistor VCEO 80V 100V DARLINGTON

    2SD2604

    Abstract: 5001T
    Text: TOSHIBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 i .-03.2 ±0.2 - 2.7±Q.2


    OCR Scan     		PDF 2SD2604 2SD2604 5001T

    2SD2604

    Abstract: No abstract text available
    Text: TO SH IBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ± 0.3 . 03.2 ± 0.2 2.7±Q.2 High DC Current Gain : —2000 (Min.)


    OCR Scan     		PDF 2SD2604 2SD2604

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 . Ç&3.2 ±0.2 -j I.- 2.7±0-2


    OCR Scan     		PDF 2SD2604 100/zs^

    Untitled

    Abstract: No abstract text available
    Text: 8368602 SOLITRON DEVICES _ At 8 6 D 02 55 0 INC »F|ñ3bñbDS 00D2S50 7 - 35 ~ 33 ELEMENT NUMBER 3 MEDIUM VOLTAGE, FAST SWITCHING MONOLITHIC NPN EPITAXIAL PLANAR POWER DARLINGTON TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 3 0 ,0 0 0 A Aluminum


    OCR Scan     		PDF 00D2S50 203mm) 40MHz 40MHz SDM3303; SDM3103

    1225 transistor 09 d

    Abstract: No abstract text available
    Text: T O SH IB A 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : lipE —2000 (Min.) Low Saturation Voltage : V q £ (sat) = l*5V (Max.)


    OCR Scan     		PDF 2SD2604 1225 transistor 09 d

    2SD2604

    Abstract: No abstract text available
    Text: TO SH IBA 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS . 03.2 ±0.2 2.7±Q.2 High DC Current Gain : —2000 (Min.) Low Saturation Voltage : Vç;e (sat) = 1.5V (Max.)


    OCR Scan     		PDF 2SD2604 2SD2604

    marking codes transistors sot-223

    Abstract: FD MARKING CODE SOT23 SMD marking CODE 2U sot-89 marking code SOT89 smd marking 13 npn Darlington SOT23 marking 1m sot 223 marking code 01 SMD CODE PACKAGE SOT89 smd sot-89 marking code sot-223 code marking
    Text: SMD DARLINGTON TRANSISTORS DESCRIPTION •Philips Components Darlington transistors provide high input impedance and thus high gain by virtue of two series-integrated transistors on a single chip. High current versions are excellent for industrial switching applications


    OCR Scan     		PDF OT-89 OT-223 BST62 PMBT6427 PMBTA13 PMBTA14 PMBTA63 PMBTA64 BSP62 BST50 marking codes transistors sot-223 FD MARKING CODE SOT23 SMD marking CODE 2U sot-89 marking code SOT89 smd marking 13 npn Darlington SOT23 marking 1m sot 223 marking code 01 SMD CODE PACKAGE SOT89 smd sot-89 marking code sot-223 code marking

    TRANSISTOR BDX

    Abstract: TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184
    Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BUW 4ff 30 A BUW 49 20 A BUX 69 IS A J/T


    OCR Scan     		PDF BUV48 BUV47 O-22CIAB CB-117 BUV37 CB-244 CB-285 TRANSISTOR BDX TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184

    PXTA14

    Abstract: PMBTA64 BST60 BST62 PMBTA14 PMBTA13 BST50
    Text: SM D DARLINGTON TRANSISTORS DESCRIPTION • Philips Components Darlington transistors provide high input impedance and thus high gain by virtue of two series-integrated transistors on a single chip. High current versions are excellent for industrial switching applications


    OCR Scan     		PDF OT-89 PXTA64 PZTA13 PZTA14 PZTA63 PZTA64 OT-23 OT-89 OT-223 PXTA14 PMBTA64 BST60 BST62 PMBTA14 PMBTA13 BST50