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    DARLINGTON NPN 1A Search Results

    DARLINGTON NPN 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    ULS2003H/R Rochester Electronics LLC ULS2003 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ULS2022R/B Rochester Electronics LLC ULS2022 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy

    DARLINGTON NPN 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UDT1605 Preliminary NPN EPITAXIAL SILICON TRANSISTOR 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR  DESCRIPTION The UTC UDT1605 is an NPN Darlington transistor. Utilizing UTC’s advanced techonology, UDT1605 features ultra-high DC


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    PDF UDT1605 UDT1605 UDT1605G-AB3-R OT-89 QW-R208-048

    ZTX705

    Abstract: Zetex T 705 FCX705 FCX705TA ZTX704 marking 705
    Text: FCX705 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low


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    PDF FCX705 OT223 Vari31) ZTX705 Zetex T 705 FCX705 FCX705TA ZTX704 marking 705

    ztx605

    Abstract: FCX605 FCX605TA SOT223
    Text: FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low


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    PDF FCX605 OT223 ztx605 FCX605 FCX605TA SOT223

    2K 622

    Abstract: FCX605 FCX605TA MARKING 605
    Text: FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low


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    PDF FCX605 OT223 2K 622 FCX605 FCX605TA MARKING 605

    Untitled

    Abstract: No abstract text available
    Text: FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low


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    PDF FCX605 OT223

    transistor BF245

    Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The


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    PDF OT-223 PZTA14T1 inch/1000 U218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor BF245 BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363

    TS16949

    Abstract: ZXTN04120HFF ZXTN04120HFFTA ZXTP05120HFF darlington complementary 120v
    Text: ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor Summary BVCEO > 120V IC cont = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part number ZXTP05120HFF Description C This high performance NPN Darlington transistor is housed in the small outline SOT23 flat package for applications where


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    PDF ZXTN04120HFF OT23F, ZXTP05120HFF ZXTN04120HFFTA D-81541 TS16949 ZXTN04120HFF ZXTN04120HFFTA ZXTP05120HFF darlington complementary 120v

    Untitled

    Abstract: No abstract text available
    Text: ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor Summary BVCEO > 120V IC cont = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part number ZXTP05120HFF Description C This high performance NPN Darlington transistor is housed in the small outline SOT23 flat package for applications where


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    PDF ZXTN04120HFF OT23F, ZXTP05120HFF ZXTN04120HFFTA D-81541

    TIP110

    Abstract: TIP110 transistor TIP111 TIP112
    Text: Darlington Power Transistors NPN TIP110/111/112 Darlington Power Transistors (NPN) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals:


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    PDF TIP110/111/112 O-220 O-220, MIL-STD-202, TIP110 TIP111 TIP112 TIP110 TIP110 transistor TIP111 TIP112

    300V transistor npn 2a

    Abstract: 300V switching transistor NPN Transistor 10A 400V TIP151 Diode 400V 1.5A NPN Transistor 1.5A 400V NPN Transistor 10A 400V to 92 tip152 TRANSISTOR VCE 400V 500mA TIP150
    Text: TIP150, TIP151, TIP152 Silicon NPN Power Darlington Transistor Description: The TIP150, TIP151, and TIP152 are silicon NPN power Darlington transistors in a TO220 type package designed for use in automotive ignition, switching, and motor control applications.


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    PDF TIP150, TIP151, TIP152 TIP152 TIP150) TIP151) TIP152) TIP150 300V transistor npn 2a 300V switching transistor NPN Transistor 10A 400V TIP151 Diode 400V 1.5A NPN Transistor 1.5A 400V NPN Transistor 10A 400V to 92 TRANSISTOR VCE 400V 500mA TIP150

    NTE2341

    Abstract: npn darlington TO92 NTE2342
    Text: NTE2341 NPN & NTE2342 (PNP) Silicon Complementary Transistors Darlington Driver Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers.


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    PDF NTE2341 NTE2342 NTE2341 500mA, 100MHz npn darlington TO92 NTE2342

    DARLINGTON 3A 100V npn

    Abstract: hfe 2500 NTE264
    Text: NTE263 NPN & NTE264 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.


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    PDF NTE263 NTE264 NTE263) NTE264) DARLINGTON 3A 100V npn hfe 2500 NTE264

    NTE2317

    Abstract: automotive ignition Designed for automotive ignition applications Electronic car ignition circuit vce 500v NPN Transistor
    Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter


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    PDF NTE2317 NTE2317 150mA automotive ignition Designed for automotive ignition applications Electronic car ignition circuit vce 500v NPN Transistor

    NTE262

    Abstract: NTE261 DARLINGTON 3A 100V npn
    Text: NTE261 NPN & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications.


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    PDF NTE261 NTE262 100mA NTE262 NTE261 DARLINGTON 3A 100V npn

    nte2317

    Abstract: automotive ignition Electronic car ignition circuit Designed for automotive ignition applications DARLINGTON 10A to218 TO218 package vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor
    Text: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter


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    PDF NTE2317 NTE2317 150mA automotive ignition Electronic car ignition circuit Designed for automotive ignition applications DARLINGTON 10A to218 TO218 package vbe 10v, vce 500v NPN Transistor vce 500v NPN Transistor

    150w darlington transistor to3 package

    Abstract: NTE97 NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV
    Text: NTE97 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE97 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly


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    PDF NTE97 NTE97 150w darlington transistor to3 package NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV

    nte98

    Abstract: No abstract text available
    Text: NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly


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    PDF NTE98 NTE98

    ignition coil npn power darlington

    Abstract: HSOP16 TD62064 TD62064BFG TD62064BP1G
    Text: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for


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    PDF TD62064BP1G/BFG TD62064BP1G TD62064BFG TD62064BFG TD62064BP1G ignition coil npn power darlington HSOP16 TD62064

    Untitled

    Abstract: No abstract text available
    Text: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for


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    PDF TD62064BP1G/BFG TD62064BP1G TD62064BFG TD62064BFG TD62064BP1G DIP16 HSOP16

    TD62064

    Abstract: HSOP16 TD62064BFG TD62064BP1G BFG DIODE
    Text: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for


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    PDF TD62064BP1G/BFG TD62064BP1G TD62064BFG TD62064BFG TD62064BP1G DIP16 HSOP16 TD62064Bled TD62064 BFG DIODE

    TD62064BFG

    Abstract: HSOP16 TD62064 TD62064BP1G relay 8 pin
    Text: TD62064BP1G/BFG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic TD62064BP1G,TD62064BFG 4ch High-Current Darlington Sink Driver The TD62064BP1G and TD62064BFG are high-voltage, high-current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for


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    PDF TD62064BP1G/BFG TD62064BP1G TD62064BFG TD62064BFG TD62064BP1G HSOP16 TD62064 relay 8 pin

    2N6388

    Abstract: No abstract text available
    Text: SGS-THOMSON 2N6387 2N6388 [MSIfiiSilLiSìlKìtÉfflOSS SILICO NPN POWER DARLINGTON TRANSISTORS . 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The 2N6387 and


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    PDF 2N6387 2N6388 2N6388 O-220

    2n6388

    Abstract: 2n6387 NPN POWER DARLINGTON TRANSISTORS
    Text: Æ 7 SGS-THOM SON Ä IM M i ltLi© îi® iies 2N6387 2N6388 SILICO NPN POWER DARLINGTON TRANSISTORS . 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE • NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTtPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION


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    PDF 2N6387 2N6388 2N6388 O-220 NPN POWER DARLINGTON TRANSISTORS

    CZT2000

    Abstract: No abstract text available
    Text: Centrar C ZT2000 S e m ic o n d u cto r Corp. NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface m ount package,


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    PDF CZT2000 OT-223 TheCENTRALSEMICONDUCTORCZT2000 25jiA 160mA, 160mA 100mA 160mA CZT2000