suf-3000
Abstract: No abstract text available
Text: Preliminary SUF-3000 0.25-16 GHz, Cascadable pHEMT MMIC Amplifier Product Description Sirenza Microdevices’ SUF-3000 is a monolithically matched broadband high IP3 gain block covering 0.25-16 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain
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SUF-3000
SUF-3000
EDS-105417
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Untitled
Abstract: No abstract text available
Text: Preliminary SUF-5000 0.1-3.7 GHz, Cascadable pHEMT MMIC Amplifier Product Description Sirenza Microdevices’ SUF-5000 is a monolithically matched broadband high IP3 gain block covering 0.1 - 3.7 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain
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SUF-5000
SUF-5000
EDS-105419
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SUF-4000
Abstract: 15 GHz high power amplifier
Text: Preliminary SUF-4000 Product Description Sirenza Microdevices’ SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from
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SUF-4000
SUF-4000
EDS-105418
15 GHz high power amplifier
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Untitled
Abstract: No abstract text available
Text: Preliminary SUF-2000 Product Description Sirenza Microdevices’ SUF-2000 is a monolithically matched broadband high IP3 gain block covering 0.05-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from
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SUF-2000
SUF-2000
EDS-105416
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SUF-9000
Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER pHEMT operating junction temperature
Text: SUF-9000DC to 10 GHz, Cascadable pHEMT MMIC Amplifier SUF-9000 Preliminary DC TO 10 GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: Bare Die, 0.83 mm x 0.74 mm Product Description Features RFMD’s SUF-9000 is a monolithically matched broadband high IP3 gain block covering DC to 10 GHz. This pHEMT FET-based amplifier uses a self-bias Darlington
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SUF-9000DC
SUF-9000
SUF-9000
EDS-106169
SiGe HBT GAIN BLOCK MMIC AMPLIFIER
pHEMT operating junction temperature
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Untitled
Abstract: No abstract text available
Text: SUF-6000 2GHz to 16GHz Broadband pHEMT Amplifier SUF-6000 Proposed 2GHz to 16GHz BROADBAND pHEMT AMPLIFIER Product Description Features RFMD’s SUF-6000 is a high gain broadband 2-stage amplifier covering 2GHz to 16GHz for wideband communication and general purpose applications. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active
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SUF-6000
16GHz
SUF-6000
14GHz
EDS-105420
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SUF-5033
Abstract: high frequency 2.45GHz mixer for bluetooth
Text: SUF-5033 SUF-5033Low Noise, High Gain SiGe HBT 0.1GHZ TO 4.0GHZ, CASCADABLE PHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3mmx3mm Product Description Features The SUF-5033 is a monolithically matched broadband high IP3 gain block covering 0.1GHz to 4.0GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5V supply. It
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SUF-5033
SUF-5033Low
16-Pin,
SUF-5033
DS091109
16-Pin
SUF-5033PCBA-410
45GHz
high frequency 2.45GHz mixer for bluetooth
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Untitled
Abstract: No abstract text available
Text: SUF-6000 SUF-6000 2 GHz to 16 GHz Broadband pHEMT Amplifier 2 GHz to 16 GHz BROADBAND pHEMT AMPLIFIER Package Style: 1.80 mm x 0.88 mm Product Description Features RFMD’s SUF-6000 is a high gain broadband 2-stage amplifier covering 2 GHz to 16 GHz for wideband communication and general purpose applications. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active
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SUF-6000
SUF-6000
DS090605
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SUF-5033
Abstract: suf 5033
Text: SUF-5033 SUF-5033Low Noise, High Gain SiGe HBT 0.1 GHZ TO 4.0 GHZ, CASCADABLE PHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features The SUF-5033 is a monolithically matched broadband high IP3 gain block covering 0.1 GHz to 4.0 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5 V supply. It
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SUF-5033
SUF-5033Low
16-Pin,
SUF-5033
DS090605
16-Pin
SUF-5033PCBA-410
suf 5033
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suf 5033
Abstract: No abstract text available
Text: SUF-5033 SUF-5033Low Noise, High Gain SiGe HBT 0.1 GHZ TO 4.0 GHZ, CASCADABLE PHEMT MMIC AMPLIFIER Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features The SUF-5033 is a monolithically matched broadband high IP3 gain block covering 0.1 GHz to 4.0 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from a single 5 V supply. It
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SUF-5033Low
SUF-5033
16-Pin,
SUF-5033
DS110718
SUF-5033SB
SUF-5033SQ
SUF-5033SR
SUF-5033TR7
suf 5033
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2SC5586
Abstract: 2SC5487 2SA2003 sla 1003 transistor 2SC5586 2SA1295 2SC3264 FKV550T SLA5065 SAP16N SAP09
Text: Transistors 2-1 Power Transistors . 14 2-1-1 Transistors for Audio Amplifiers . 14 • Complementary Transistors for Output . 14
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AC10A5021
SLA5058
SLA5081
SLA5055
SLA5088
SLA5046
SLA5049
SLA5070
SLA5054
SLA5057
2SC5586
2SC5487
2SA2003
sla 1003
transistor 2SC5586
2SA1295 2SC3264
FKV550T
SLA5065
SAP16N
SAP09
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2SC5586
Abstract: 2SC5586 equivalent 2SC5487 SAP16 sla 1003 SAP16N 2SA2003 transistor 2SC5586 sla6024 2SC5586 DATASHEET
Text: Transistors 2-1 Power Transistors . 14 2-1-1 Transistors for Audio Amplifiers . 14 • Complementary Transistors for Output . 14
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TM1641B-L
TM2541B-L
TM361S-R
TM361M-L
TM361S-L
TM561S-R
TM561M-L
TM561S-L
TM861M-L
TM861S-L
2SC5586
2SC5586 equivalent
2SC5487
SAP16
sla 1003
SAP16N
2SA2003
transistor 2SC5586
sla6024
2SC5586 DATASHEET
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Varistor RU
Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
Varistor RU
SE110N
transistor
2SC5487
2SA2003
SE090N
high voltage transistor
SE090
RBV-406
2SC5586
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2SC5586
Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
2SC5586
transistor 2SC5586
diode RU 3AM
2SA2003
microwave oven diode
single phase bridge rectifier IC with output 1A
2SC5487
RG-2A Diode
Dual MOSFET 606
TFD312S-F
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SE135N
Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Text: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1488
2SA1492
SE135N
SE110N
UX-C2B
SE140N
STR83159
SE130N
STR2012
Transistor AC 51
SE140
SE115N
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darlington pair power transistor
Abstract: AN31001 current amplifier note darlington AN3100 MMG3001NT1 MMG3002NT1 MMG3003NT1 freescale power RF products darlington pair transistor
Text: Freescale Semiconductor Application Note AN3100 Rev. 0, 3/2005 General Purpose Amplifier Biasing by: Jeff Gengler Freescale Semiconductor INTRODUCTION Freescale Semiconductor’s General Purpose Amplifier GPA devices are all designed to operate from a single
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AN3100
darlington pair power transistor
AN31001
current amplifier note darlington
AN3100
MMG3001NT1
MMG3002NT1
MMG3003NT1
freescale power RF products
darlington pair transistor
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em 234 stepper
Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Text: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility
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O01ED0
H1-O01ED0-0106030ND
em 234 stepper
2SC5586 equivalent
8002 1018 AUDIO amplifier
2SC5586
2SC5487
voltage doubler bridge
varistor 560-2
2sa2003
se125n
SE090
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2SC5586 equivalent
Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements
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TM1641S-L
TM1661B-L
TM1661P-L
TM1661S-L
TM2541B-L
TM2561B-L
TM341M-L
TM341S-L
TM341S-R
TM361M-L
2SC5586 equivalent
2sc5586
2sa1694 equivalent
2SC5487
transistor 2SC5586
STR83159
em 234 stepper
SE090
SK 5154S
2SK3460 equivalent
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darlington pair transistor
Abstract: Darlington pair AN3100 AN31001
Text: Freescale Semiconductor Application Note AN3100 Rev. 2, 7/2008 General Purpose Amplifier Biasing by: Jeff Gengler Freescale Semiconductor INTRODUCTION Freescale Semiconductor’s General Purpose Amplifier GPA devices are all designed to operate from a single
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AN3100
darlington pair transistor
Darlington pair
AN3100
AN31001
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Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design
Abstract: No abstract text available
Text: Guest Column | February 10, 2014 Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design By Alan Ake, Skyworks Solutions, Inc. I consider myself fortunate that, as a fresh-out-of-school EE, I was able to start my electrical engineering career designing radio frequency RF front ends for what are now antiquated one-way
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1990s,
Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design
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MP1620
Abstract: MN2488 MP1620 MN2488 MN2488 equivalent LM4702TA transistors MP1620 it MN2488 star sound audio amplifier circuit diagram transistors MP1620 LM4702 100w audio amplifier pcb
Text: National Semiconductor Application Note 1490 Mark Brasfield May 2006 Introduction such as THD+N 0.0006% THD , SNR, Frequency Response, Noise and other audio specifications. In addition, these techniques will also assist the designer in creating an audio amplifier that has performance comparable to other
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LM4702.
LM4702
CSP-9-111S2)
AN-1490
MP1620
MN2488
MP1620 MN2488
MN2488 equivalent
LM4702TA
transistors MP1620 it MN2488
star sound audio amplifier circuit diagram
transistors MP1620
100w audio amplifier pcb
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Untitled
Abstract: No abstract text available
Text: DYNAMIC SATURATION VOLTAGE — A DESIGNER’S COMPARISON By W arren Schultz Motorola Inc. Semiconductor Products Division Reprinted by Permission of POWERCONVERSION INTERNATIONAL, October 1983 Issue, Volume 9, Number 9. 1983 Intertec Communications Inc.
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10/isec
AR119/D
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SE110N
Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1488
2SA1492
SE110N
A4032
SE130N
SE005N
SE090N
high hfe transistor
FMQG5FM
SLA7022M
SE012
3gu diode
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darlington pair transistor 1A
Abstract: npn darlington transistor 150 watts chip die npn transistor darlington die
Text: Linear Regulator Output Structures Choosing a linear regulator for an application involves more than looking for the part with the lowest dropout voltage or lowest cost. Although IC manufacturers promote regulators with very low dropout voltages, these are often the most expensive part in
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LM109
CS-8129
CS-8121
darlington pair transistor 1A
npn darlington transistor 150 watts
chip die npn transistor
darlington die
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