DARLINGTON BD647 Search Results

DARLINGTON BD647 Result Highlights (5)

Part	Manufacturer	Description
ULS2003H/R	Rochester Electronics LLC	ULS2003 - High Voltage High Current Darlington Array
ULS2022R/B	Rochester Electronics LLC	ULS2022 - High Voltage High Current Darlington Array
PS2502L-1-A	Renesas Electronics Corporation	DC Input Darlington, , /
PS2502L-4-A	Renesas Electronics Corporation	DC Input Darlington, , /
PS2502-4-A	Renesas Electronics Corporation	DC Input Darlington, , /

DARLINGTON BD647 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
bd648 Abstract: bd650 bd649 BD652 BD644 BD65 BD643 BD645 BD646 BD647 BD649 Text: BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.	Original	BD644/646/648/650/652 O-220 BD643, BD645, BD647, BD649 BD651 BD644 BD646 BD648 bd648 bd650 bd649 BD652 BD644 BD65 BD643 BD645 BD646 BD647	PDF
BD648 Abstract: transistor bd648 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS transistor bd647 BD647 B2750 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD647	Original	BD647 -12mA -50mA BD648 transistor bd648 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS transistor bd647 BD647 B2750	PDF
BD645 Abstract: bd647 BD649 darlington bd647 BD643 BD651 bd650 bd649 BD644 BD649 equivalent BD646 Text: SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.	Original	BD643/645/647/649/651 O-220 BD644, BD646, BD648, BD650 BD652 BD643 BD645 BD647 BD645 bd647 BD649 darlington bd647 BD643 BD651 bd650 bd649 BD644 BD649 equivalent BD646	PDF
BD650 Abstract: BD646 BD648 BD644 BD652 IC 648 bd650 bd649 audio 652 6 pin ic transistor bd650 BD643 Text: SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.	Original	BD644/646/648/650/652 O-220 BD643, BD645, BD647, BD649 BD651 BD644 BD646 BD648 BD650 BD646 BD648 BD644 BD652 IC 648 bd650 bd649 audio 652 6 pin ic transistor bd650 BD643	PDF
TIC106M SCR Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent Text: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers	Original	O-220, OT-93 2M/TSP0904 TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent	PDF
TIC106D equivalent Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent Text: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers	Original	O-220, OT-93 2M/TSP0711 TIC106D equivalent TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent	PDF
b0333 Abstract: box53b 044E3 BOW93B b0647 BOX67A BOT63A BOT65A 2N605B B0699 Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) tr Max tf Max (s) (s) 300n 500n 500n 1.2u 175 A 175 J 150 J 150 J 1.5u B.5u 300n 300n 300n 300n 5.0u 800n BOOn BOOn BOOn 150 J 175 J	Original	U2T201 2N6352 2S01169 2S01315 SGS121 TIP121 TIP621 MJE1102 b0333 box53b 044E3 BOW93B b0647 BOX67A BOT63A BOT65A 2N605B B0699	PDF
B0648 Abstract: B0648F 652f BD643F BD644F BD645F BD647F BD649F BD651F BD652F Text: BD644F; 646F B0648F; 650F BD652F SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington transistors in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F. QUICK REFERENCE DATA	OCR Scan	BD644F; B0648F; BD652F BD643F, BD645F, BD647F, BD649F BD651F. BD644F B0648 B0648F 652f BD643F BD645F BD647F BD651F BD652F	PDF
Untitled Abstract: No abstract text available Text: J BD644F; 646F BD648F;650F BD652F V SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F. QUICK REFERENCE DATA	OCR Scan	BD644F; BD648F BD652F BD643F, BD645F, BD647F, BD649F BD651F. BD644F OT186.	PDF
BD651 Abstract: No abstract text available Text: BD643; BD645; BD647; BD649; ^ BD651_ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 envelope. They are intended fo r output stages in audio equipment, general amplifiers, and analogue switching	OCR Scan	BD643; BD645; BD647; BD649; BD651_ O-220 BD644, BD646, BD648, BD650 BD651	PDF
BO 649 Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN Text: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington	OCR Scan	0235bQS T-33-29 OP-66) 643/BD 645/BD BD643. 0QQ43 T-33-29 BD647 BO 649 BD 104 darlington bd 645 TOP-66 b 647 c BD 649 BD64S Q62702-D376 BD 104 NPN	PDF
Untitled Abstract: No abstract text available Text: BD644F;646F BD648F; 650F BD652F PHILIPS INTERNATIONAL 5bE D 711005b 0042^54 bDb M P H I N T -33~ 3j SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.	OCR Scan	BD644F BD648F; BD652F 711005b OT186 BD643F, BD645F, BD647F, BD649F BD651F.	PDF
BD645 Abstract: BD649 BD647 darlington bd647 D 17275 n69s BD643 B13 transistors Text: G DI E SOLI» STATE 3875081 G E SOLID D[f\| 3Û7S0Ô1 0017573 L> 0 1 E ~ 17273 STATE ~ _ Darlington Power Transistore File Number 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts	OCR Scan	BD643, BD645, BD647, BD649 O-22QAB RCA-BD643, BD649 1500b BD645 BD647 darlington bd647 D 17275 n69s BD643 B13 transistors	PDF
652f Abstract: J578 BD644F BD647F BD652F BD643F LG tft circuit diagram BD645F BD648F BD649F Text: BD644F; 646F BD648F;650F BD652F J PHILIPS INTERNATIONAL 5bE » 711005b 0042^54 bOb M P H I N T-33-3J SILICON DARLINGTON POWER TRANSISTORS PNP silicon Darlington transistors in a SOT186 envelope w ith an electrically insulated m ounting base. NPN complements are BD643F, BD645F, BD647F, BD649F and BD651F.	OCR Scan	BD644F; BD648F BD652F 711002b OT186 BD643F, BD645F, BD647F, BD649F BD651F. 652f J578 BD644F BD647F BD652F BD643F LG tft circuit diagram BD645F	PDF

B0645 Abstract: BD85 transistor bd647 b0652 BD651 BD645 transistor bd646 BD649 80651 bd851 Text: BD643; BD645; BD647; BD649; Ì B D 6 5 1 _ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T0-220 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching	OCR Scan	BD643; BD645; BD647; BD649; BD651 T0-220 BD644, BD646, BD648, BD650 B0645 BD85 transistor bd647 b0652 BD651 BD645 transistor bd646 BD649 80651 bd851	PDF
50t65 Abstract: bd650 BD644 Text: BD644; 646; 648 BD650; 652 J SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TO-220 envelope and intended fo r applications such as audio output stages, switching, and general amplifiers.	OCR Scan	BD644; BD650; O-220 BD643, BD645, BD647, BD651. BD644 50t65 bd650 BD644	PDF
D 1991 AR Abstract: lg bd645 transistor d 1991 ar BD644 philips BD650 BD643 B0645 BD644 B0643 BD649 philips Text: BD644; 646; 648 _ jj^ BD650; 652 PHILIPS INTERNATIONAL SbE D • 711GÛ2b 7b7 M P H I N 'V - 3 3 - 3 SILICON DARLINGTON POWER TRANSISTORS PN P epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TCJ-220	OCR Scan	BD644; BD650 T-33-3Ã TCJ-220 BD643, BD645, BD647, BD649 BD651. BD644 D 1991 AR lg bd645 transistor d 1991 ar BD644 philips BD643 B0645 B0643 BD649 philips	PDF
transistor BD6 Abstract: bd645 transistor BD643 H 649 A transistor Text: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching	OCR Scan	BD643; BD645; BD647; BD649; BD651 7110fi2b BD644, BD646, BD648, BD650 transistor BD6 bd645 transistor BD643 H 649 A transistor	PDF
D 1991 AR Abstract: BD644 transistor 648 transistor bd650 transistor bd644 b0651 BD65 BD651 lms-21 BD645 Text: J BD644; 646; 648 ^B P 6 5 0 ; 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T0-220 envelope and intended for applications such as audio output stages, switching, and general amplifiers.	OCR Scan	BD644; BD650; T0-220 BD643, BD645, BD647, BD649 BD651. BD644 D 1991 AR transistor 648 transistor bd650 transistor bd644 b0651 BD65 BD651 lms-21 BD645	PDF
lg bd645 Abstract: darlington bd 645 BD649 philips bd649 PNP transistor BD649 B0645 BD645 BD643 BD646 BD647 Text: BD643; BD645; BD647; BD649; BD651 PHILIPS I N T ERNATIONAL 5bE D • 7110fl2b 0 0 4 2 ^ 741 « R H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching	OCR Scan	BD643; BD645; BD647; BD649; BD651 7110fl2b T0-220 BD644, BD646, BD648, lg bd645 darlington bd 645 BD649 philips bd649 PNP transistor BD649 B0645 BD645 BD643 BD646 BD647	PDF
D 1991 AR Abstract: BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode Text: BD644; 646; 648 _ j \ BD650^652_ PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b □ D M E C144 7 b 7 H P H I N T -33-31 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T 0 -2 2 0	OCR Scan	BD644; BD650 711002b BD643, BD645, BD647, BD651. BD644 BD650; D 1991 AR BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode	PDF
BD 649 Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65 Text: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington	OCR Scan	fl23SLQS T-33-29 OP-66) 643/BD 645/BD BD647. BD843, BD645. BD647, BD 649 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65	PDF
darlington bd647 Abstract: TL 2262 lg bd645 tic 2260 BD649 Text: File Num ber 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A O A pplications: t Features: m Power switching Hammer drivers • Operates from IC without predriver Series and shunt	OCR Scan	BD643, BD645, BD647, BD649 O-22QAB BD649 220AB darlington bd647 TL 2262 lg bd645 tic 2260	PDF
BD649 Abstract: BD647 TL 2262 BD64S 00m0 Text: File Number 1241 BD643, BD645, BD647, BD649 HARRIS SEMTCOND SECTOR SbE ]> 4302271 OOMObflZ £21 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A r o Applications: Features: t m Power switching • Operates from 1C without predrlver ■ Hammer drivers	OCR Scan	BD643, BD645, BD647, BD649 TQ-220AB BD649 BD647 TL 2262 BD64S 00m0	PDF

DARLINGTON BD647 Search Results

DARLINGTON BD647 Result Highlights (5)

DARLINGTON BD647 Datasheets Context Search

bd648

BD648

BD645

BD650

TIC106M SCR

TIC106D equivalent

b0333

B0648

Untitled

BD651

BO 649

Untitled

BD645

652f

B0645

50t65

D 1991 AR

transistor BD6

D 1991 AR

lg bd645

D 1991 AR

BD 649

darlington bd647

BD649