DD 127 D TRANSISTOR
Abstract: No abstract text available
Text: STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 30@ VGS = 10V 30V TO-252 and TO-251 Package.
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STU/D9916L
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O-252AA
U/D9916L
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DD 127 D TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: S DU/D9916 S amHop Microelectronics C orp. Augus t , 2002 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) TYP R ugged and reliable. 25 @ V G S = 4.5V
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DU/D9916
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/D9916
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Untitled
Abstract: No abstract text available
Text: Green Product STU/D9916L S a mHop Microelectronics C orp. Ver 1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 25 @ VGS=10V
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STU/D9916L
O-252
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252AA(
O-252
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Untitled
Abstract: No abstract text available
Text: S T U/D9916L Green Product S amHop Microelectronics C orp. Mar.25 2004 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ө) Max R ugged and reliable.
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U/D9916L
O-252
O-251
O-252AA
Tube/TO-252
O-252
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Untitled
Abstract: No abstract text available
Text: STU/D9916L SamHop Microelectronics Corp. OCT. 29 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS 30V ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 32@ VGS = 10V 25A TO-252 and TO-251 Package.
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STU/D9916L
O-252
O-251
O-252AA
O-252
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Untitled
Abstract: No abstract text available
Text: S DU/D9916 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 30 @ V G S = 4.5V
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Original
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PDF
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DU/D9916
O-252
O-251
O-252AA
O-252
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d9916
Abstract: DSA004201
Text: S DU/D9916 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 30 @ V G S = 4.5V
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Original
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PDF
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DU/D9916
O-252
O-251
O-252AA
Tube/TO-252
O-252
d9916
DSA004201
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