sanken power transistor
Abstract: "Sanken Electric"
Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPB-D9 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPB-D9 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications ●DC-DC converters
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Abstract: No abstract text available
Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC SJPB-D9 Mar. 2008 Schottky Barrier Rectifier General Description Package SJPB-D9 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. Applications DC-DC converters
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Diode 9H
Abstract: d5cd IPB031NE7N3 G
Text: IPB031NE7N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q @D9=9J54 D53 8>? <? 7I 6? BCI>3 8B? >? EC B53 D9 6931D9 ?> Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 3 ? >F5BD5BC V 9H /- J R 9H"[Z#$YMd +& Y" I9 )( 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &
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IPB031NE7N3
Diode 9H
d5cd
IPB031NE7N3 G
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes 1SS401 SOT-323 Schottoky Barrier Diode FEATURES Low forward voltage Low reverse current Small total capacitance 1 3 2 MARKING: D9 Maximum Ratings @Ta=25℃ Parameter Symbol
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OT-323
1SS401
OT-323
300mA
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Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes 1SS4 01 SOT-323 Schottoky Barrier Diode FEATURES Low forward voltage Lo w reverse current Small total capacitance 1 3 2 MARKING: D9 Maximum Ratings @Ta=25℃ Parameter Symbol
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OT-323
OT-323
300mA
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ATMEL EEPROM RoHS SGS report
Abstract: Avago US Digital AFBR-57D9AMZ
Text: AFBR-57D9AMZ Digital Diagnostic SFP, 850 nm, 8.5/4.25/2.125 GBd Low Voltage 3.3 V Fibre Channel RoHS Compliant Optical Transceiver Z AM D9 -57 BR AF Data Sheet Description Features Avago Technologies’ AFBR-57D9AMZ optical transceiver supports high-speed serial links over multimode optical
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AFBR-57D9AMZ
AFBR-57D9AMZ
850nm
AV02-3466EN
ATMEL EEPROM RoHS SGS report
Avago US Digital
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SMD TRANSISTOR L6
Abstract: transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor
Text: BOM STEVAL-ISS001V2 PART TYPE QUANT ITY QTY DESIGNATOR D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155
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STEVAL-ISS001V2
BAS16
100PPM
330UH
12X9MM
UBB-4R-D10T-1
SMD TRANSISTOR L6
transistor SMD Y1
y1 smd transistor
SMD TRANSISTOR Y1
1P smd transistor
y2 smd transistor
resistor smd 103
transistor smd R55
transistor smd j6
L6 smd transistor
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ZMY10
Abstract: ZMY110 ZPY10 ZPY11 ZPY110 ZPY12 ZPY13 ZPY15 ZPY16
Text: ZPY1 to ZPY110 VISHAY Vishay Semiconductors Zener Diodes Mechanical Data Case: DO-41 Glass Case Weight: approx. 350 mg Packaging Codes/Options: D9/5 K per 13 " reel 52 mm tape , 10 K/box E1/5 K per Ammo mag. (52 mm tape), 10 K/box 17173 Features • Silicon Planar Power Zener Diodes
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ZPY110
DO-41
ZMY10
ZMY110.
D-74025
04-Dec-02
ZMY10
ZMY110
ZPY10
ZPY11
ZPY110
ZPY12
ZPY13
ZPY15
ZPY16
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Avago US Digital
Abstract: No abstract text available
Text: AFBR-57D9AMZ Digital Diagnostic SFP, 850 nm, 8.5/4.25/2.125 GBd Low Voltage 3.3 V Fibre Channel RoHS Compliant Optical Transceiver Z AM D9 -57 BR AF Data Sheet Description Features Avago Technologies’ AFBR-57D9AMZ optical transceiver supports high-speed serial links over multimode optical
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AFBR-57D9AMZ
AFBR-57D9AMZ
850nm
AV02-3466EN
Avago US Digital
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information MITB15WB1200TMH Converter - Brake - Inverter Module Trench IGBT P P1 T1 D8 D10 D12 T3 G1 D7 NTC1 L1 L2 L3 G3 D1 B NTC2 D9 D11 D13 T2 N G4 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V
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MITB15WB1200TMH
IDAVM25=
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G4EU
Abstract: No abstract text available
Text: Advanced Technical Information MITB10WB1200TMH Converter - Brake - Inverter Module Trench IGBT P P1 T1 D8 D10 D12 T3 G1 D7 NTC1 L1 L2 L3 G3 D1 B NTC2 D9 D11 D13 T2 N G4 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V
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MITB10WB1200TMH
IDAVM25=
G4EU
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MITA15WB1200TMH
Abstract: No abstract text available
Text: Advanced Technical Information MITA15WB1200TMH Converter - Brake - Inverter Module Trench IGBT P P1 T1 D8 D10 D12 T3 G1 D7 NTC1 L1 L2 L3 G3 D1 B NTC2 D9 D11 D13 T2 N G4 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V
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MITA15WB1200TMH
IDAVM25=
MITA15WB1200TMH
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MIAA15WB600TMH
Abstract: No abstract text available
Text: Advanced Technical Information MIAA15WB600TMH Converter - Brake - Inverter Module NPT IGBT P P1 T1 D8 D10 D12 T3 G1 D7 NTC1 L1 L2 L3 G3 D1 B NTC2 D9 D11 D13 T2 N G4 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 600 V VCES = 600 V
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MIAA15WB600TMH
IDAVM25=
MIAA15WB600TMH
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GLAR94001
Abstract: Samsung Electro-Mechanics led Samsung Electro-Mechanics SI 1340
Text: ISSUE NO : Rev: DATE OF ISSUE : 2009. 01. 16 SPECIFICATION MODEL : SLTRGB35166N [Approved Rank : VF SS , CIE(T1, T2), IV(D1, D2, D3, D4, D5, D6, D7, D8, D9, DA, DB, DC)] FULL COLOR TOP VIEW CUSTOMER : 대표 승인원 CUSTOMER : 대표 승인원 DRAWN CHECKED
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SLTRGB35166N
24hours
SLTRGB35166N)
GLAR94001
Samsung Electro-Mechanics led
Samsung Electro-Mechanics
SI 1340
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Untitled
Abstract: No abstract text available
Text: IF Receiver AD6672 FUNCTIONAL BLOCK DIAGRAM AVDD VIN+ VIN– PIPELINE ADC AGND 14 DRVDD NOISE SHAPING REQUANTIZER VCM AD6672 11 DCO± D9±/D10± OR± REFERENCE 1-TO-8 CLOCK DIVIDER SERIAL PORT SCLK 0/D0± SDIO CSB CLK+ CLK– 09997-001 Performance with NSR enabled
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AD6672
ANSI-644
CP-32-12)
AD6672BCPZ-250
AD6672BCPZRL7-250
AD6672-250EBZ
32-Lead
AD6672
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frequency mulitiplexer
Abstract: AN-835 ANSI-644 JESD51-2 7000 jb1
Text: IF Receiver AD6672 FUNCTIONAL BLOCK DIAGRAM AVDD VIN+ VIN– PIPELINE ADC AGND 14 DRVDD NOISE SHAPING REQUANTIZER VCM AD6672 11 DCO± REFERENCE SDIO D9±/D10± OR± 1-TO-8 CLOCK DIVIDER SERIAL PORT SCLK 0/D0± CSB CLK+ CLK– 09997-001 Performance with NSR enabled
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AD6672
ANSI-644
CP-32-12)
AD6672BCPZ-250
AD6672BCPZRL7-250
AD6672-250EBZ
32-Lead
AD6672
frequency mulitiplexer
AN-835
JESD51-2
7000 jb1
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2416A
Abstract: No abstract text available
Text: Advanced Technical Information MITA10WB1200TMH Converter - Brake - Inverter Module Trench IGBT P P1 T1 D8 D10 D12 T3 G1 D7 NTC1 L1 L2 L3 G3 D1 B NTC2 D9 D11 D13 T2 N G4 Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V
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MITA10WB1200TMH
IDAVM25=
2416A
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G4EU
Abstract: No abstract text available
Text: Advanced Technical Information MIAA10WB600TMH Converter - Brake - Inverter Module NPT IGBT P P1 T1 D8 D10 D12 T3 G1 D7 NTC1 L1 L2 L3 G3 D1 B NTC2 T2 GB D9 D11 D13 N G2 EU Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 600 V VCES = 600 V IDAVM25 =
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MIAA10WB600TMH
IDAVM25=
G4EU
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Untitled
Abstract: No abstract text available
Text: Quad, Current-Output, Serial-Input 16-/14-Bit DACs AD5544/AD5554 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM VREFA B C D VDD D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 D12 D13 D14 D15 A0 A1 SDI SDO RFBA INPUT REGISTER R DAC A REGISTER R DAC A IOUTA AGNDA RFBB
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AD5544:
16-bit
AD5554:
14-bit
28-lead
32-lead
16-/14-Bit
AD5544/AD5554
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Abstract: No abstract text available
Text: DICE/DWF SPECIFICATION LTC1409 12-Bit, 800ksps Sampling A/D Converter with Shutdown 4 3 2 1 28 27 26 25 PAD FUNCTION 1. +AIN 15. D3 2. –AIN 16. D2 3. VREF 17. D1 4. REFCOMP 18. D0 5. AGND 19. OGND 6. D11 MSB 20. NAP/SLP 7. D10 21. SHDN 8. D9 22. RD 9. D8
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LTC1409
12-Bit,
800ksps
90mils
155mils
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IPB029N06N3G
Abstract: No abstract text available
Text: IPB029N06N3 G Ie\Q IPI032N06N3 G IPP032N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H , & Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 .( J *&1 Y" *(
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IPB029N06N3
IPI032N06N3
IPP032N06N3
IPB029N06N3G
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Diode marking MFW
Abstract: MDC03 Marking TRANSISTOR 737 MFW14 transistor marking D9 common collector npn array pnp 8 transistor array transistor 736
Text: IMD9A Transistor, digitai, dual, NPN and PNP, with 2 resistors Features Dimensions Units : mm • available in SMT6 (IMD, SC-74) package • package marking: IMD9A; D9 • IMD9A (SMT6) 2 .9±0.Z package contains a PNP (DTA114YKA) and an NPN (DTC114YKA) transistor, each with
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SC-74)
DTA114YKA)
DTC114YKA)
SC-59)
Diode marking MFW
MDC03
Marking TRANSISTOR 737
MFW14
transistor marking D9
common collector npn array
pnp 8 transistor array
transistor 736
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BTS112-A
Abstract: BTS112A
Text: SIEMENS TEMPFET BTS112A Features • • • • N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin Type v D9 BTS112A 60 V /d 12 A ^DS on> 0.15 £i 1 2 3 G D S Package Ordering Code
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BTS112A
O-22QAB
C67078-S5014-A3
BTS112A
C67078-S5014-A4
C67078-S5014-A5
BTS112-A
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ZR500
Abstract: zr2000 ZR12
Text: Power S em icon du ctor Devices Soft Recovery Diodes—Disc Type Ip AV Model V rrm @Tc=1051C A IpSM V fm @50HZ V ta Qrr Rtlyc Ty) it • PC V/W V 0.080 150 D6 0.040 150 D7 0.030 150 D9 0.021 150 D ll Outline @IpM kA V A ZR200/18 200 1800 2.5 2.0 600 1.0
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ZR200/18
ZR300/25
ZR500/20
ZR600/16
ZR500/45
ZR800/36
ZR1000/25
ZR1000/45
ZR1200/36
ZR1500/25
ZR500
zr2000
ZR12
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