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    IRF240

    Abstract: D88E IRF2402
    Text: [? MiF3°KQ FUF IRF240.241 D88EN2,M2 18 AMPERES 200,150 VOLTS RDS ON = 0.18 n FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRF240 D88EN2 00A//usec, D88E IRF2402

    250M

    Abstract: IRF240
    Text: electrical characteristics T q - 2 5 ° C (unless otherwise specified) CHARACTERISTIC [ off characteristics Drain-Source Breakdown Voltage IRF230/D86DN2 (VGS = 0V, lD = 250 ,uA) IRF231/D86EM2 Zero Gate Voltage Drain Current (Vps = Max Rating, VGs = 0V, T c = 25°C)


    OCR Scan     		PDF IRF230/D86DN2 IRF231/D86EM2 00A//usec, 250M IRF240