CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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VT82C496G
Abstract: VT82C486 VT82C496 VIA VT82C496G VT82C406MV VT82C486A vt82c496g" VT82C406 80486DX4-100 VT82C505
Text: VT82C496G VT82C406MV GREEN PC 80486 PCI/VL/ISA SYSTEM DATA SHEET DATE : April 20, 1995 VIA TECHNOLOGIES, INC. Table of Contents VIA Technologies, Inc. Table of Contents Features. 1
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VT82C496G
VT82C406MV
C496G
MSTR16#
208-Pin
85TYP
VT82C496G
VT82C486
VT82C496
VIA VT82C496G
VT82C406MV
VT82C486A
vt82c496g"
VT82C406
80486DX4-100
VT82C505
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ba37
Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Text: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary
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K8D1716UTC
K8D1716UBC
48TSOP1
48FBGA
047MAX
48-Ball
ba37
K8D1716U
K8D1716UBC
samsung nor flash
BA251
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M420000000
Abstract: FSB073 3FE00
Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector
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Am42DL640AG
16-Bit)
73-Ball
5M-1994.
M420000000
FSB073
3FE00
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BGA-48P-M13
Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV160B-12PBT
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20846-6E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160T-80/-90/-12/MBM29LV160B-80/-90/-12 • GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words
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DS05-20846-6E
9LV160T-80/-90/-12/MBM29LV160B-80/-90/-12
MBM29LV160T/B
16M-bit,
48-pin
48-ball
F0306
BGA-48P-M13
FPT-48P-M19
FPT-48P-M20
MBM29LV160B-12PBT
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DL161
Abstract: DL162 DL163
Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL16xD
16-Bit)
Am29DL164D
Am29DL162D
DL161
DL162
DL163
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324T
Abstract: 2MWx16bit
Text: ADVANCED INFORMATION MX69LW322/324T/B 32M-BIT [X8/X16] FLASH AND 2M-BIT/4M-BIT X8/X16 SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C
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MX69LW322/324T/B
32M-BIT
X8/X16]
X8/X16)
70/90ns
70/85ns
AuP44
APR/17/2002
APR/18/2002
MAY/31/2002
324T
2MWx16bit
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C000H-DFFFH
Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation
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MX29LW128T/B/U/D
128M-BIT
JAN/27/2003
MAR/28/2003
MAY/16/2003
MAY/29/2003
C000H-DFFFH
24Blocks
FB0000h-FBFFFFh
9F0000h-9FFFFFh
C10000h-C1FFFFh
FF4000h-FF5FFFh
8a0000h8affffh
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TRS-150
Abstract: No abstract text available
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02C1630E1AM Advance Information N02C1630E1AM Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View
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N02C1630E1AM
66-Ball
32K-word
128K-words
23134-C
TRS-150
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2561b
Abstract: CPU 314 IFM 8kx1 RAM cy17 ALI chipset fast page mode dram controller CY2254ASC-2 CY27C010 CY82C691 CY82C693
Text: PRELIM INARY CY82C691 Pentium hyperCache™ Chipset System Controller Features Supports mixed standard page-mode and EDO DRAMs Supports the VESA Unified Memory Architecture VUMA Support for standard 72-bit-wide DRAM banks Supports non-symmetrical DRAM banks
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CY82C691
8Kx21
2561b
CPU 314 IFM
8kx1 RAM
cy17
ALI chipset
fast page mode dram controller
CY2254ASC-2
CY27C010
CY82C691
CY82C693
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L323C
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile
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Am29DL32xC
16-Bit)
29DL32xC
L323C
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Untitled
Abstract: No abstract text available
Text: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212
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fi23SbOS
0031bl0
82C212
M/256
640CHAF
SAB82C212
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NEC V20
Abstract: 82c11 PPI 8255 interface with 8086 V30 CPU explain the 8288 bus controller 10G APD chip NEC 2561 8255 interface with 8086 Peripheral 82C601 intel 8284 clock generator
Text: CHIPS p r e l i m in a r y 82C 110 IBM PS/2 MODEL 30 AND SUPER XT” COMPATIBLE CHIP m Key superset features: EMS control, dual • 100% PC/XT compatible clock, and 2.5 MB DRAM support ■ Build IBM PS/2™ Model 30 with XT softw an compatibility ■ Bus Interface compatible with 8086,80086,
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82C110
80CB6,
80C88,
100-pin
82CT10
82C110
A16-11
F82C110
PFP-100
NEC V20
82c11
PPI 8255 interface with 8086
V30 CPU
explain the 8288 bus controller
10G APD chip
NEC 2561
8255 interface with 8086 Peripheral
82C601
intel 8284 clock generator
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yg 2822
Abstract: RAS 0510 cs8221 neat Waukesha 6670 82C631 82c211 2021G 82C206 CHIPset for 80286 REG62
Text: PRELIM INARY C S 8221 NEW ENHANCED AT NEAT DATA BOOK 8 2 C 2 1 1 / 8 2 C 2 1 2 / 8 2 C 2 1 5 / 8 2 C 2 0 6 (IPC ) CHIPSet™ 100% IBM™ PC/AT Compatible New En hanced CHIPSet™ for 12MHz to 16MHz systems Supports 16MHz 80286 operation with only 0.5-0.7 wait states for 100ns DRAMs and 12
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CS8221
82C211
/82C212/82C215/82C206
12MHz
16MHz
100ns
150ns
yg 2822
RAS 0510
cs8221 neat
Waukesha 6670
82C631
2021G
82C206
CHIPset for 80286
REG62
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a19t
Abstract: ba1s 000IH
Text: TOSHIBA TENTATIVE TC58FYT160/B160FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FYT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable
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TC58FYT160/B
160FT-12
16-MBIT
TC58FYT160/B160
48-pin
a19t
ba1s
000IH
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 16 M 2 M x 8 / 1 M x 16 BIT MBM29LV160T-90-12/MBM29LV16 OB-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
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MBM29LV160T-90-12/MBM29LV16
OB-90/-12
48-pin
46-pin
48-ball
6C-46P-M02)
46002S-4C
MBM29LV160T-90/-12/M
LV160
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TH 50VSF1420/1421AAXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS SRA M AND FLASH M EM O R Y M IXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF1420/1421AAXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216 bit flash memory. The SEA M is organized as 262,144 words by 8 bits and the flash memory
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50VSF1420/1421AAXB
TH50VSF1420/1421AAXB
152-bit
48-pin
P-BGA48-1014-1
TH50VSF14
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC58FVT160/B160FT-85.-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-M BIT 2M x 8 BITS / 1M x 16 BITS CMOS FLASH M EM O R Y DESCRIPTION The TC58FVT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable
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TC58FVT160/B160FT-85
TC58FVT160/B160
48-pin
-VT160/B
160FT-85
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a19t
Abstract: TC58FVB160FT 1X16 D8000H-DFFFFH
Text: TOSHIBA TENTATIVE TC58FVT160/B160FT-85#-10#-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT160/B160 is a 16,777,216 - bit, 3.0-V read-only e lectrically erasable and program m able
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TC58FVT160/B160FT-85
16-MBIT
TC58FVT
160/B
TC58FVT160/B160
48-pin
a19t
TC58FVB160FT
1X16
D8000H-DFFFFH
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KNC 201 15
Abstract: K1503 hp 1502 vga knc 201 39 82C452 CD 1517 intergrated circuit KNC 201 82C322 LIM EMS 4.0 82C631
Text: CHIPS AND TECHNOLOGIES, INC. 3050 ZÄNKER ROAD. SAN JOSE, CA 95134 408-434-0600 PRELIMINARY SPECIFICATION CHIPS/280 MODEL 70/80 COMPATIBLE CHIPSET 16-, 20-, 25-, & 33-Mhz* * 33M h z t im in g w a v e f o r m s & T-NUMBERS ARE AVAILABLE A u g u s t 9 ,1 9 8 9
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CHIPS/280
33-MHZ*
33Mhz
CPI022
CPIQ22
82C226
100-Pin
KNC 201 15
K1503
hp 1502 vga
knc 201 39
82C452
CD 1517 intergrated circuit
KNC 201
82C322
LIM EMS 4.0
82C631
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8a21
Abstract: ba1s F2480 A12F TH50VSF2480AASB TH50VSF2481AASB a19t
Text: SFP- TOSHIBA Multi Chip Package SRAM & FLASH Memory 4M BIT SRAM X 8/ X16 16M BIT FLASH ( X 8/X 16) Data Sheet TOSHIBA TH50VSF2480/2481AASB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION
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F2480/2481
TH50VSF2480/2481AASB
304-bits
216-bits
65-pin
P-LFBGA65-1209-0
8a21
ba1s
F2480
A12F
TH50VSF2480AASB
TH50VSF2481AASB
a19t
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TH 50VSF1420/1421AAXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF1420/1421AAXB is a package of mixed 2,097,152-bit SRAM and 16,777,216-bit FLASH memory. The SRAM and FLASH memory organized 262,144 words by 8 bits SRAM and 1,048,576
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50VSF1420/1421AAXB
TH50VSF1420/1421AAXB
152-bit
216-bit
48-pin
P-BGA48-1014-1
50VSF1420/1421
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Untitled
Abstract: No abstract text available
Text: CYPRESS PRELIMINARY CY82C691 Pentium hyperCache™ Chipset System Controller Features Provides control for the cache, system memory, and the PCI bus PCI Bus Rev. 2.1 compliant Supports 3V Pentium™ , AMD K5, and Cyrix 6x86 M1 CPUs Support for WB or W T L1 cache
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CY82C691
8Kx21
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