74f832
Abstract: f1804 74F240 74F845 AN215 74F30245 74F653 6kd-5 F1808 IEEE488 TRAnSCEIVER
Text: INTEGRATED CIRCUITS AN215 74FXXXX “Light Load” input products 1988 Apr Philips Semiconductors Philips Semiconductors Application note 74FXXXX “Light Load” input products Major “Light Load” Input Features Introduction • Patented “Light Load” NPN input structure
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AN215
74FXXXX
74f832
f1804
74F240
74F845
AN215
74F30245
74F653
6kd-5
F1808
IEEE488 TRAnSCEIVER
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f1804
Abstract: 74F653 74F240 74F845 AN215 intel 8286 "IEEE-488 GPIB" 74F863
Text: INTEGRATED CIRCUITS AN215 74FXXXX “Light Load” input products IC15 Data Handbook Philips Semiconductors April 1988 Philips Semiconductors Application note 74FXXXX “Light Load” input products Major “Light Load” Input Features Introduction • Patented “Light Load” NPN input structure
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AN215
74FXXXX
f1804
74F653
74F240
74F845
AN215
intel 8286
"IEEE-488 GPIB"
74F863
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Transistor J550
Abstract: VK200-20/4B choke vk200 input output npn 547 transistor "30 mhz" driver Amplifier vk200 1N4997 2204B MRF426 J550
Text: Order this document by MRF426/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics —
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MRF426/D
MRF426
Transistor J550
VK200-20/4B
choke vk200
input output npn 547 transistor
"30 mhz" driver Amplifier
vk200
1N4997
2204B
MRF426
J550
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1N5761
Abstract: No abstract text available
Text: ON Semiconductor BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
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BUL45
CurreUR150
MUR105
1N400
F/385
nF/1000
F/400
1N5761
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MARKING W2 SOT23 TRANSISTOR
Abstract: sot23 Transistor marking p2 13000 transistor ta 8268 sot-23 transistor p2 marking 2sc2714qy 0441 3543 amplifier marking AM sot-23 MARKING W3 SOT23 TRANSISTOR
Text: 2SC2714 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER APPLICATIONS AM/FM ,RF,MIX,IF AMPLIFIER APPLICATIONS * High Current Gain Bandwidth Product fT=550MHz Package:SOT-23
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2SC2714
550MHz
OT-23
CHARACTERIST12
600TYP
6614TYP
99221TYP
1102TYP
MARKING W2 SOT23 TRANSISTOR
sot23 Transistor marking p2
13000 transistor
ta 8268
sot-23 transistor p2 marking
2sc2714qy
0441
3543 amplifier
marking AM sot-23
MARKING W3 SOT23 TRANSISTOR
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MARKING W2 SOT23 TRANSISTOR
Abstract: ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG
Text: 2SC2712LT1 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA Max. Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.)
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2SC2712LT1
150mA
OT-23
2SA1162
600TYP
6614TYP
99221TYP
1102TYP
MARKING W2 SOT23 TRANSISTOR
ta 8268
sot-23 transistor p2 marking
MARKING W3 SOT23 TRANSISTOR
sot23 Transistor marking p2
3543 amplifier
2SC2712LT1
2SC2712L
MARKING d4 npn sot23
sot-23 Marking LG
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pc817a
Abstract: D2257 transistor t114 330UF 400V LR2257 maxim 1909 ac PWM 220v 1N4148 1N5817 EN55022A
Text: LESHAN RADIO COMPANY, LTD. LR2257 AC/DC Current Mode PWM power management controller The LR2257 AC—DC is a high efficiency current-mode PWM power supply controller that drives an internal NPN transistor for high voltage switching. Apply with BiCMOS technology, the
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LR2257
D2257
pc817a
D2257
transistor t114
330UF 400V
maxim 1909
ac PWM 220v
1N4148
1N5817
EN55022A
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toroid FT10
Abstract: MTP8P10 MUR105 MJE18006 MJF18006 MPF930 221D BUL45 BUL45F L 0629
Text: MOTOROLA Order this document by BUL45/D SEMICONDUCTOR TECHNICAL DATA BUL45 * BUL45F* Data Sheet Designer's NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power
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BUL45/D
BUL45
BUL45F*
BUL45F
BUL45/D*
toroid FT10
MTP8P10
MUR105
MJE18006
MJF18006
MPF930
221D
BUL45
BUL45F
L 0629
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R22A
Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110VAC
ZPS60-3
R22A
transistor MTBF
OPTOCUPLER HAND BOOK
TRANSISTOR mosfet
transistor R1d
R24 transistor
optocupler
transformer mtbf
R18A
R22E
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transistor R1d
Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
Text: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110VAC
ZPS40-3
transistor R1d
transistor R1A
diode FR 105
TRANSISTOR 106 d1
R22A
MTBF-ZPS40
04112
78540
R18A
217F
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1N5761
Abstract: RM10-CORE pl lamp ballast MJF18006 221D BUL45 BUL45F MJE18006 MPF930 MTP8P10
Text: MOTOROLA Order this document by BUL45/D SEMICONDUCTOR TECHNICAL DATA Designer's BUL45 * BUL45F* Data Sheet NPN Silicon Power Transistor High Voltage SWITCHMODE t Series *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS Designed for use in electronic ballast light ballast and in Switchmode Power
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BUL45/D
BUL45
BUL45F*
BUL45F
BUL45/D*
1N5761
RM10-CORE
pl lamp ballast
MJF18006
221D
BUL45
BUL45F
MJE18006
MPF930
MTP8P10
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Transistor J550
Abstract: MRF426 "30 mhz" driver Amplifier 100 watt hf transistor 12 volt 1N4997 2204B MOTOROLA LINEAR HF MOTOROLA MRF426
Text: MOTOROLA Order this document by MRF426/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics —
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MRF426/D
MRF426
MRF426/D*
Transistor J550
MRF426
"30 mhz" driver Amplifier
100 watt hf transistor 12 volt
1N4997
2204B
MOTOROLA LINEAR HF
MOTOROLA MRF426
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1N5761
Abstract: npn BUL45G bul45a
Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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BUL45G
BUL45/D
1N5761
npn BUL45G
bul45a
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toroid FT10
Abstract: 1N5761 diode 1n400 MTP12N10 MTP8P10 MUR105 MUR150 1N4007 BUL45 MJE210
Text: ON Semiconductor BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include: POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
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BUL45
r14525
BUL45/D
toroid FT10
1N5761
diode 1n400
MTP12N10
MTP8P10
MUR105
MUR150
1N4007
BUL45
MJE210
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bul45g
Abstract: No abstract text available
Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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BUL45G
O-220AB
21A-09
BUL45/D
bul45g
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IN5822 diode
Abstract: Driver with MJE13003
Text: BL8080 HIGH INTEGRATED PWM CONTROLLER GENERAL DISCRIPTION FEATURES The BL8080 is a PWM controller designed to drive high voltage NPN transistors. It integrates an oscillator, cycle-by-cycle current limit, thermal protection and over voltage protection, great reducing the number of external
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BL8080
BL8080
IN5822
IN4007
IN4148
470uF
330pF
IN5822 diode
Driver with MJE13003
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transistor BJT 2N2222
Abstract: CTX01-15275 31353R-02 BCM3351 SI3230 BCM33XX bjt 2n2222 BCM11xx npn bjt 2N2222 FZT953
Text: Si3233 P R O SLIC P R O G R A M M A B L E CMOS SLIC W I T H R I N G I N G / B A T T E R Y VO L TA G E G E N E R A T I O N Features Software Programmable SLIC with codec interface Software programmable internal balanced ringing up to 90 VPK 5 REN up to 4 kft, 3 REN up to 8 kft
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Si3233
transistor BJT 2N2222
CTX01-15275
31353R-02
BCM3351
SI3230
BCM33XX
bjt 2n2222
BCM11xx
npn bjt 2N2222
FZT953
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : • • High Speed Switching Time Complementary to 2SA1905 SÍI + D5 = ^-4V (Max.) (at Ic = 3A)
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2SC5076
2SA1905
961001EAA2
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code
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Q62702-F1316
OT-23
fl235L
900MHz
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transistor smd LC 77
Abstract: smd transistor ISS smd transistor 2x5 BLT81 smd transistor ISS 7 MAM043 C4901
Text: Philips Semiconductors Product specif ication UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a
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BLT81
OT223
OT223
MAM043-
7110fl2b
MRC089
711Dfl2b
S0T223.
711002b
transistor smd LC 77
smd transistor ISS
smd transistor 2x5
BLT81
smd transistor ISS 7
MAM043
C4901
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification NPN silicon planar epitaxial * - * microwave power transistor R02731B20W FEA TUR ES Q U IC K R E F E R E N C E DATA • Suitable for short and medium Microwave performance up to T mb = 25 °C in a common base class C
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R02731B20W
711005b
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR KRX206U TE CHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S • Including tw o devices in US6. U ltra Super m ini type w ith 6 leads. • W ith B uilt-in bias resistors.
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KRX206U
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2SD2440
Abstract: No abstract text available
Text: TOSHIBA 2SD2440 TO SHIBA TRANSISTOR SWITCHING APPLICATION • • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2440 High Breakdown Voltage VCBO = 100 V MIN. Ve b O = 18 V (MIN.) Low Saturation Voltage VCE(sat) = 1-2 V (MAX.) (IC = 5A, IB = 1A) High Speed : tf = 1 f a (TYP.) (Ic = 5 A, IB = ±0.5 A)
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2SD2440
961001EAA2'
2SD2440
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PDF
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MRF426
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF426 . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W PEP
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MRF426
MRF426
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