D41D10 TRANSISTOR Search Results

D41D10 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

D41D10 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
D41D2 Abstract: D41D8 D41D1 D41D5 D41D7 D41D11 D41D10 transistor d41d4 D41D11 transistor npn D41D14 Text: D41D1 D41D2 D41D4 D41D5 D41D7 D41D13 D41D8 D41D14 D41D10 D41D11 w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR D41D series types are PNP silicon power transistors designed for amplifier and switching applications. The NPN complementary	Original	D41D1 D41D2 D41D4 D41D5 D41D7 D41D13 D41D8 D41D14 D41D10 D41D11 D41D5 D41D11 D41D10 transistor D41D11 transistor npn	PDF
DK53 Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037 Text: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037	PDF
DK53 Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513 Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037	PDF
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544	PDF
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar	PDF
mje521 equivalent Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry	Original	MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100	PDF
2N3055 Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes	Original	MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64	PDF
2N5631 equivalent Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —	Original	2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator	PDF
BD179-10 equivalent Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.	Original	BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1	PDF
sec tip41c Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power	Original	MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943	PDF
TRANSISTOR BC 384 Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required	Original	TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100	PDF

BU108 Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A	Original	BUV21 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277	PDF
D41D5 Abstract: D41D8 D41D D41D4 D41D2 D41D7 D28D D40D D41D10 D41D13 Text: Silicon Power Tab Transistors D41D “ Color Molded” The General Electric D41D is a black, silicone plastic encapsulated, power transistor designed for various specific and general purpose applications, such as: output and driver stages o f amplifiers operating at frequencies from DC to greater than 1.0 mHz; series, shunt and switching	OCR Scan	I36B8I69PII D41D5 D41D8 D41D D41D4 D41D2 D41D7 D28D D40D D41D10 D41D13	PDF
D41E7 Abstract: 2n6556 SILICON DICE motorola D41D8 2C655 Text: MOTOROLA \| SC { D I O D E S / O P T O J 6367255 MOTOROLA SC 34 Dif\| fe,3t,7E5S 0 0 3 7 ^ 5 7 CDIODES/OPTO 3^C SILICON POWER TRANSISTOR DICE continued) 37957 _ 7^33 -o/ 2C6556 DIE NO. — PNP LINE SOURCE — PL500.156 This die provides performance equal to or better than that of	OCR Scan	PL500 2C6556 2N6554 2N6S55 2N6556 D41D1 D41D2 D41D4 D41D5 D41D7 D41E7 SILICON DICE motorola D41D8 2C655	PDF
NSDU51 Abstract: D43C8 NSD6181 0410 2N4234 2N6726 2N6727 92PU51 92PU51A D41D1 Text: NATL SEMICOND DISCRETE S5E D • bSG113Q 0G377fl7 5 ■ T '21-0t PNP Medium Power Transistors by Ascending Vceo Part No. Vceo \»l Max (mA/V) V « (sat) (V) Max 150 300 10/1 100/1 100/2 100/2 1A/1 500/1 0.5 0.5 0.5 0.5 0.7 0.7 1000 1A 500 500 1000 1000 TO-237	OCR Scan	0G377fl7 T-21-0t 2N6726 O-237 92PU51 D41D1 O-202 D41D2 NSDU51 D43C8 NSD6181 0410 2N4234 2N6727 92PU51A	PDF
D43C8 Abstract: nsd6181 NSDU51 Text: NATL SEflICOND DISCRETE E2E D • bS D113Q 0037767 5 ■ T-27-0/ PNP Medium Power Transistors by Ascending Vce0 Part No. Max (m A /V) Vce (sat) (V) Max 150 300 10/1 100/1 100/2 100/2 1A/1 500/1 0.5 0.5 0.5 0.5 0.7 0.7 1000 1A 500 500 1000 1000 TO-237 TO-237	OCR Scan	D113Q T-27-0/ 2N6726 92PU51 D41D1 D41D2 NSDU51 TN5023 2N4234 2N6727 D43C8 nsd6181	PDF
D40D5 Abstract: D40D7...8 D4001 D4102 tab ic D40D1 D40D2 D40D3 D40D4 D40D7 Text: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2	OCR Scan	100mA D40D1 D41D1 D40D2 D41D2 D40D3 D40D4 D41D4 D40D5 D40D5 D40D7...8 D4001 D4102 tab ic D40D7	PDF
D40E5 Abstract: D40D14 tab ic D40D5 D4102 D40D1 D40D2 D40D3 D40D4 D40D7 Text: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2	OCR Scan	100mA D40D1 D41D1 D40D2 D41D2 D40D3 D40D4 D41D4 D40D5 D40E5 D40D14 tab ic D40D5 D4102 D40D7	PDF
tab ic Abstract: D40D1 D40D2 D40D3 D40D4 D40D5 D40D7 D41D1 D41D2 D41D4 Text: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2	OCR Scan	100mA D40D1 D41D1 D40D2 D41D2 D40D3 D40D4 D41D4 D40D5 23N0TE2 tab ic D40D5 D40D7	PDF
ksd113 Abstract: NSDU57 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92 Text: PNP Transistors V cbo V Min v CEO (V) Min Vebo (V) Min 2N4030 TO-39 60 60 5 2N4031 TO-39 80 60 80 60 5 5 50 50 50 50 60 50 TO-39 80 80 5 50 60 also Avail. JA N /T X /V Versions 2N4036 TO-39 90 85 TO-39 60 40 2N4314 TO-39 90 65 7 20 60 10 25 40 30 40 70 100	OCR Scan	bS01130 D0B70fll NSD206 O-202 NSDU56 NSDU57 ksd113 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92	PDF
D41D8 Abstract: D41D10 transistor D41D5 tab ic ic tab 810 d28d D4102 D41D D41D4 D40D2 Text: SILICON POWER T R A N S I S T O R S COMPLEMENTARY - 1 AMPERE Pt T c = 25°C v CEO Min. GE Type NPN PNP W h FE •c (V ) Cont. <A) hF E @ 2V , 100mA @ 2V , 1A Min. Max. M in. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D 40 D 2 - 6.25 30 1.0	OCR Scan	100mA D40D1 D41D1 D40D2 D41D2 D40D3 D40D4 D41D4 D40D5 I36B8I69PII D41D8 D41D10 transistor D41D5 tab ic ic tab 810 d28d D4102 D41D	PDF

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D41D10 TRANSISTOR Search Results

D41D10 TRANSISTOR Result Highlights (5)

D41D10 TRANSISTOR Datasheets Context Search

D41D2

DK53

DK53

BUV48I

2N5657 equivalent

MJE494

2SD669 equivalent

2SC495

mje521 equivalent

2N3055

2N5631 equivalent

BD179-10 equivalent

sec tip41c

TRANSISTOR BC 384

BU108

D41D5

D41E7

NSDU51

D43C8

D40D5

D40E5

tab ic

ksd113

D41D8