Untitled
Abstract: No abstract text available
Text: = = = 5 HE D " • cì 5 3 c]bcì 0 DG01SM7 D3S ■ ÜJAF WS57C71C ÜIAFER SCALE INTEGRATION HIGH SPEED 32K x 8 CMOS PROM/RPROM K E Y FEATURES • Ultra-Fast Access Time • Immune to Latch-UP — 35 ns — Up to 200 mA • Low Power Consumption • Fast Programming
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DG01SM7
WS57C71C
WS57C71C
MIL-STD-883C
MIL-STD-883C
WS57C71C-35J
WS57C71C-35L
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d3s diode
Abstract: d3s 57 diode 6562s DIODE d3s d3s schottky d3s 05 diode DIODE d3s 57 D3S6
Text: 5 /a s /h *- AUT' S H 'Í Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D3S6M Package I AX14 60V 3A CD 1 •Tjl50°C • P rrsm 26.5±2 I7 ffiiE U> t w Í7+0.5 7-0 26.5±2 W °@ • 1.40 U - K m D3S 1D • S R S ÎÜ •D C /D C n y j K — P •W M , tf- h s
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Tjl50
d3s diode
d3s 57 diode
6562s
DIODE d3s
d3s schottky
d3s 05 diode
DIODE d3s 57
D3S6
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Y-667A
Abstract: Y-667 l475 Varian EIMAC rs tube Eimac application note 4 y-6671 RS 566 triode d3s 15 utah g 12 r
Text: ywpVywy Y-667 Y-667A P ianar Triode The Y667/Y667A is a planar tnode o£ ceramic metal construction and rugged design, to be used especially m highly linear ampli fier operations up to 2 5 GHz. The Y667/Y667A may be used as an amplifier or an oscillator m the CM as well as grid
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Y-667
Y-667A
Y667/Y667A
-52dB
l475
Varian EIMAC
rs tube
Eimac application note 4
y-6671
RS 566 triode
d3s 15
utah g 12 r
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Untitled
Abstract: No abstract text available
Text: 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching HITACHI Features • Low on-resistance RDS „n, = 0. m typ. (Vos = 4 V, ID = 1(M mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK *2 1. Source 2. Gate 3. Drain 990 ADE-208-574
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2SK2570
ADE-208-574
10jis,
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HD63265
Abstract: 5.25 floppy interface HD63265P HD63265FP FLOPPY DISK Clk16MHZ
Text: H D63265 -Floppy Disk Controller FDC HD63265 is a floppy disk controller (FDC) VLSI cir cuit which is capable of controlling u p to 3.5", 5.25", or 8" floppy disk drives receiving com m ands from a microprocessor in a 68 or 80-series m icrocom puter
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D63265
HD63265
80-series
ADE-602-001)
5.25 floppy interface
HD63265P
HD63265FP
FLOPPY DISK
Clk16MHZ
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HD63265P
Abstract: HD63265 765 fdc HD63265FP d2s 28 diode d3s diode 41ES ABE 802 PVDX FDD service
Text: H D63265-F lo p p y D isk C o n tro lle r FD C HD63265 is a floppy disk controller (FDC) VLSI cir cuit w hich is capable of controlling up to 3.5", 5.25", or 8" floppy disk drives receiving com m ands from a m icroprocessor in a 68 or 80-series microcomputer
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D63265-
HD63265
80-series
HD63265
130pF
ADE-602-001)
HD63265P
765 fdc
HD63265FP
d2s 28 diode
d3s diode
41ES
ABE 802
PVDX
FDD service
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E-BA8
Abstract: ISOS refer STP2104
Text: S un M ic ro electro nics July 1997 SEC DATA SHEET SBus-to-EBus Controller D e s c r ip t io n The STP2014 SBus-to-EBus Controller SEC is an interface between the SBus and the EBus that is used for slow I/O devices such as TOD, EPROM, serial port, and keyboard/mouse. The STP2014 also houses the inter
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STP2014
S1T2014
STP2104
STP2014
E-BA8
ISOS refer
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BYY 56
Abstract: byy 57 1200 OA61 BYY57 BYS 98-50 byy57e BYy5758
Text: Low Power Diodes Rectifier diodes V rrm V Ifsm Ifavm trr outline A 10 ms, A °c /w lo Type 100 6 - 150 151 V br A 1 0 ms, Ifsm Ifavm tvj max outline A A °C C a th o r iA tv, ~ tvj max D 6/ 1200. 1600 151 Controlled avalanche diodes T ype VrrM V tA = 4 5 °C
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--i-76-
-28minâ
57/58-E
BYY 56
byy 57 1200
OA61
BYY57
BYS 98-50
byy57e
BYy5758
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D3S 50
Abstract: D3S 57
Text: VG/CA-B Connector Dim ensions Wall Mounting Receptacle CA3100E-B-08 Flange with threaded holes CA3100E-B-09 (Flange with through holes) CA3100E-B-08, -09 designates a wall mounting receptacle, with 90° endbell, cable clam p and telescoping bushing. Modifications see page 10
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CA3100E-B-08
CA3100E-B-09
CA3100E-B-08,
CA3100E10SL-*
CA3100E12S-*
CA3100E14S-*
CA3100E16S-*
CA3100E16-*
OOE18-*
CA3100E20-*
D3S 50
D3S 57
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Untitled
Abstract: No abstract text available
Text: International IO R Rectifier • • • • • PD - 9.1435B PRELIMINARY IRF7311 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Vdss = 20 V ^DS on = 0.029Î2 Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier
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1435B
IRF7311
char25
C-119
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HT1616C
Abstract: HT1617 SW1616M16A
Text: H T 1 6 1 6 / H T 1 6 1 6 C / H T 1 6 1 7 T im e r w ith D ia le r I n te r f a c e Patent Number: 84545 R.O.C. Patent Pending: 08/214, 079 (U.S.A.) Operating voltage: 1.2V-1.7V • Stop watch • Built-in dialer interface Low operating current: 4|_iA typ.
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HT1616/HT1616C/HT1617
HT1616/HT1616C)
HT1616/HT1616C/HT1617
16-digit
HT1616/HT1616C
SW1616M16A
12-hour
HT1616C
HT1617
SW1616M16A
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7975
Abstract: LA 7673 SW1616M16A IC la 7673
Text: H D L T E K n r Features • • • • • • HT1616/HT1616C/HT1617 Timer with Dialer Interface P a te n t N um ber: 84545 R.O.C. P a te n t P en d in g: 08/214, 079 (U.S.A.) • • • • O perating voltage: 1.2V-1.7V Low operating current: 4|_iA typ.
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HT1616/HT1616C/HT1617
12-hour
24-hour
32768Hz
HT1616/HT1616C)
SW1616M16
HT1616/H
T1616C/HT1617
7975
LA 7673
SW1616M16A
IC la 7673
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Untitled
Abstract: No abstract text available
Text: OUTLINE DRAWINGS XL* 102S 102L — 0.030 iI I* <3 >n TYP. D.370 0.400 370 .400 j ÍI -0 .4 4 0 - MAX —| 0.070 <8 PL. IIII C S ^ P L .J IIII IIII °-5 8 ° LAYUOT FOR PRINTED CIRCUIT DESIGN I I l' I i.BOO-j-— - j t -0 .6 7 0 - TYP. 103S 103L -0 .0 3 0
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Untitled
Abstract: No abstract text available
Text: APT20M11JVFR A dvanced P ow er Te c h n o l o g y ' 200V POWER MOS V‘ 175A 0.011Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT20M11JVFR
OT-227
APT20M11
E145592
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AFM02N5-00
Abstract: 2b25 gm 4511 4511 gm AD004T2-00 AD004T2-11 AE002M2-29 VP 16029 AK006R2-01 AK006R2-10
Text: Low Noise GaAs MESFET Chip AFM02N5-00 Dim ensions in Microns Thickness = 100 Features Low Noise Figure, 1.0 dB at 12 GHz High Associated Gain, 9.5 dB at 12 GHz High MAG, > 12 dB at 12 G H z 0.25 am Ti/Pt/Au Gates Passivated Surface Description Alpha’s AFM 02N 5-00 low noise G aAs M E S FE T Chip
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AFM02N5-00
AFM02N5-00
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
2b25
gm 4511
4511 gm
AD004T2-00
AD004T2-11
AE002M2-29
VP 16029
AK006R2-01
AK006R2-10
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74S590
Abstract: 74S59X
Text: PRELIMINARY CYM74A590 CYM74S590 CYM74S591 VLSI 82C590 Chip Set Level II Cache Module Family Features Functional Description • Pin-compatible secondary cache module family • Asynchronous CYM74Â590 or syn chronous (CYM74S590, CYM74S591) configurations with presence and con
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CYM74A590
CYM74S590
CYM74S591
82C590
CYM74
CYM74S590,
CYM74S591)
P54C-based
160-position
74S590
74S59X
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DIODE D3S 5D
Abstract: No abstract text available
Text: PD -9.1674 International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A
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IRFIZ34E
DIODE D3S 5D
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BFG96
Abstract: No abstract text available
Text: P hilips Sem iconductor; bbS3T31 0031ST2 553 M A P X Product specification BFG96 NPN 5 GHz wideband transistor bit N AUER PHILIPS/5ISCRETE DESCRIPTION » PINNING NPN transistor in a 4-lead dual-emitter plastic SOU 03 envelope. DESCRIPTION PIN It is designed for application in
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bbS3T31
0031ST2
BFG96
BFG32.
OT103.
BFG96
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DIODE D3S 5D
Abstract: diode D3s IRFZ3
Text: PD - 9.1674A International IÖR Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 60V ^D S o n = 0 . 0 4 2 Í 2 Id = 2 1 A
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IRFIZ34E
DIODE D3S 5D
diode D3s
IRFZ3
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434B
Abstract: 82430VX
Text: CYM74P430B/431B CYM74P434B/435B PRELIMINARY Intel 82430FX,HX,VX PCIset Pipelined L2 Cache Modules * 160-position connector is compatible with all four Keying Options defined in COAST 3.0. • 3.3V compatible inputs/data outputs Features • Secondary cache modules that are
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CYM74P430B/431B
CYM74P434B/435B
82430FX
82430FX,
82430HX,
82430VX
32Kx32
160-position
CYM74P434B
256-Kbyte)
434B
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LC1 D60
Abstract: QFP80-P-1420A PIN CONFIGURATION of 10 pin 7 segment display LC1 D63
Text: INTEGRATED TOSHIBA CIRCUIT T E C H N IC A L T O S H I B A C M O S D IG IT A L IN T E G R A T E D C IR C U IT DATA TC9240F S IL IC O N M O N O L I T H IC AUDIO LCD DRIVER 1C The TC9240F is a driver 1C designed for exclusive use for output expansion LCD which is controlled by serial data.
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TC9240F
TC9240F
TC9240F-
QFP80-P-1420A
LC1 D60
PIN CONFIGURATION of 10 pin 7 segment display
LC1 D63
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TM248NBK36U
Abstract: TM124MBK36U TM248NBK36F TM124MBK36F
Text: TM1 2 4 MB K 3 6 F , T M 1 2 4 M B K 3 6 U 1 0 4 8 5 7 6 BY 36-BI T D R A M M O D U L E T M 2 4 8 N B K 3 6 F , T M 2 4 8 N B K 3 6 U 20971 52 BY 36-BI T D R A M M O D U L E SMMS650A-APRIL 1995 - REVISED JUNE 1995 O r ga ni z a t i on T M1 24 M B K 3 6F . . . 1 048 576 x 36
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36-BI
SMMS650A-APRIL
72-Pin
TM248NBK36U
TM124MBK36U
TM248NBK36F
TM124MBK36F
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LT OB 2259
Abstract: ic 4060 as timer STIR 4230
Text: H D L T E K nr H T 1616/H T 1616C /H T 1617 T i m e r w ith D i a l e r I n t e r f a c e Patent Number: 84545 R.O.C. Patent Pending: 08/214, 079 (U.S.A.) • Stop watch Operating voltage: 1.2V-1.7V • Built-in dialer interface Low operating current: 4|_iA typ.
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HT1616/HT1616C/HT1617
HT1616/HT1616C)
16-digit
HT1616/HT1616C
HT1616C/HT1617
SW1616M16A
12-hour
HT1616/HT1616C/HT1617
LT OB 2259
ic 4060 as timer
STIR 4230
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NJU6426
Abstract: NJU6406B NJU6408B NJU6420B NJU6423B NJU6425 NJU6460A NJU6468
Text: LC D K ~7 < 4 lJ —X~7 <4 > y xy~7° 1. u i T i zm ± , iim / w m u t im " ni\‘ d w t jt 0 7 ^ 7 ' ^ Hn ^ N J U 6460A « m «F 1 6 tfïHTl-' 7 hVh'J^^X 7 - fA L C D z D h P - ^ h C G N J U 6408B v T ib l r j : 8« î 2î t K 7 - fA C G y m ' J y M 1 6 fiT2 Î T h * 7 h V
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NJU6460A
NJU6408B
NJU6468
NJU6468roÂ
NJU6420B
NJU6406BliR
NJU6406B
NJU6425
NJU6427li
NJU6426CDÂ
NJU6426
NJU6406B
NJU6420B
NJU6423B
NJU6425
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