Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET 400mW SOD-123 SURFACE MOUNT DEVICE MARKING CODE: Small Outline Flat Lead Plastic Package General Purpose Application Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG TJ Device Marking D1 D2 D3 TA = 25°C unless otherwise noted
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400mW
OD-123
TC1N4148W
TC1N4448W
TC1N914BW
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MELF 0207
Abstract: MARKING EU RD41 MELF-0207 MARKING D1 MELF dimensions
Text: RESISTORS CARBON FILM RD41 ① D3 RESISTORS MELF TYPE ② ③ ④ STRUCTURE C Protective coating Trimming cut Ceramic core Cap iron solder plated Carbon film Marking D1 ⑤ ⑥ 1 2 3 4 5 6 L L D2 IDENTIFICATION COATING COLOR MARKING RD41 Ivory Color bands
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D-25578
MELF 0207
MARKING EU
RD41
MELF-0207
MARKING D1
MELF dimensions
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TO126ML
Abstract: No abstract text available
Text: CYStech Electronics Corp. TO-126ML Dimension Marking: 3-Lead TO-126ML Plastic Package CYStek Package Code: D3 *: Typical Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1220 0.1299 0.1181 0.1260 0.0737 0.0837 0.0294 0.0494 DIM A
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O-126ML
UL94V-0
TO126ML
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Marking Code D3
Abstract: DIODE marking code D3 mmbd142
Text: MMBD142W SILICON EPITAXIAL PLANAR SWITCHING DIODE 3 Applications • for switching circuits 1 Absolute Maximum Ratings Ta = 25 OC Parameter 2 Marking Code: D3 Symbol Value Unit Peak Reverse Voltage VRM 80 V Reverse Voltage VR 80 V Forward Current IF 100
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MMBD142W
Marking Code D3
DIODE marking code D3
mmbd142
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Untitled
Abstract: No abstract text available
Text: fixed carbon film melf resistor features • • • • Suitable for reflow and wave soldering Metal plate terminals Meets or exceeds EIAJ-8009, EIA-PDP-100 Marking: Ivory body color with three color-coded bands dimensions and construction L D3 C Type D1 D2
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EIAJ-8009,
EIA-PDP-100
MIL-STD-202,
MIL-R-55342
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RD412B
Abstract: No abstract text available
Text: fixed carbon film melf resistor features • • • • Suitable for reflow and wave soldering Metal plate terminals Meets or exceeds EIAJ-8009, EIA-PDP-100 Marking: Ivory body color with three color-coded bands dimensions and construction L D3 C Type D1 D2
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EIAJ-8009,
EIA-PDP-100
MIL-STD-202,
MIL-R-55342
RD412B
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sot-23 DIODE marking code D3
Abstract: Marking Code D3 1SS187 DIODE marking code D3 sot-23 marking code
Text: 1SS187 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance 3 1 2 Marking Code: D3 SOT-23 Plastic Package Applications • Ultra high speed switching application Absolute Maximum Ratings Ta = 25 OC
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1SS187
OT-23
sot-23 DIODE marking code D3
Marking Code D3
1SS187
DIODE marking code D3
sot-23 marking code
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Untitled
Abstract: No abstract text available
Text: linear positive tempco melf resistor features • • • • Twenty-five specifiable temperature coefficients Standard resistance sizes Meets or exceeds EIAJ-8011, EIA-PDP-100 Marking: Gray body color dimensions and construction L D3 C Type D1 D2 Insulation
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EIAJ-8011,
EIA-PDP-100
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Untitled
Abstract: No abstract text available
Text: CFM Series Carbon Film MELF Resistor MERITEK DIMENSION Dimension mm D1 D2 MAX D3 MAX 1.40±0.1 1.55 0.10 2.20±0.1 2.4 0.15 3.20±0.2 3.4 0.30 Size L 0204 3.5±0.2 0207 5.9±0.2 0309 8.5±0.2 Coating Color: Beige Marking Color: Standard Color Band per EN 60062:2005
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G4EU
Abstract: E72873 MIXA20W1200TMH
Text: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV
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MIXA20W1200TMH
20091127a
G4EU
E72873
MIXA20W1200TMH
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Untitled
Abstract: No abstract text available
Text: MIEB 101H1200EH IGBT Module H Bridge VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101H1200EH 13, 21 D1 1 T1 D2 9 T2 10 2 19 E72873 15 D3 3 T3 D4 11 T4 12 4 14, 20 Features: + • SPT IGBT technology • low saturation voltage
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101H1200EH
MIEB101H1200EH
E72873
S1600
20110615a
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VUB72-12NOXT
Abstract: VUB72-16NOXT ixys vub 70 215 dc brake rectifier motor VUB72-12 vub 70 -16
Text: VUB 72-12/16NOXT Three Phase Rectifier Bridge VRRM = 1200/1600 V IdAVM = 110 A with Brake Chopper Part name Marking on product VUB72-12NOXT VUB72-16NOXT 6 11 D1 D3 D5 12 10 1 NTC 4 2 D 11 5 ~1 ~7 ~9 6 D2 7 5 12 9 10 D4 D6 T 2 4 Features: Application: Package:
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72-12/16NOXT
1200/1600V
VUB72-12NOXT
VUB72-16NOXT
E72873
to800
20101119a
VUB72-16NOXT
ixys vub 70
215 dc brake rectifier motor
VUB72-12
vub 70 -16
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MIEB100W1200TEH
Abstract: airconditioning inverter circuit 29-D2
Text: MIEB100W1200TEH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB100W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 D5 T3 9 10 6 2 27 28 29 NTC T5 24 25 26 21 22 23 E72873 Pin configuration see outlines. 20 D2
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MIEB100W1200TEH
E72873
20101111d
MIEB100W1200TEH
airconditioning inverter circuit
29-D2
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Untitled
Abstract: No abstract text available
Text: MIEB100W1200TEH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB100W1200TEH 16, 17, 18 30, 31, 32 D1 D3 T1 5 1 19 D5 T3 9 10 6 2 27 28 29 NTC T5 24 25 26 21 22 23 E72873 Pin coniguration see outlines. D2 20
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MIEB100W1200TEH
E72873
20101111d
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Untitled
Abstract: No abstract text available
Text: VUI 30-12 N1 Rectifier Module for Three Phase Power Factor Correction Typ. Rectified Mains Power Pn = 15 kW at Vn = 400 V 3~ fT = 15 kHz TC = 80°C Preliminary data Part name Marking on product VUI30-12N1 2 D3 D1 10 9 5 5 1 2 T 6 6 9 10 D2 D4 1 Features:
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VUI30-12N1
20130111b
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Untitled
Abstract: No abstract text available
Text: MIXD80PM650TMI IGBT Modules Multi Level IC80 T1/T4 = 82 A IC80 (T2/T3) = 110 A VCES = 650 V VCE(sat) typ. = 1.5 V XPT IGBT Technology Part name (Marking on product) MIXD80PM650TMI + Th1 D1 G1 Th2 T1 E1 e NTC D5 D2 T2 iv G2 N E2 G3 U D3 T3 E3 t D6 G4 D4 T4
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MIXD80PM650TMI
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Untitled
Abstract: No abstract text available
Text: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin coniguration see outlines. G2 G4 EU G6 EV EW Features: Application:
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MIXA20W1200TMH
20091127a
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G4EU
Abstract: ic MARKING QG E72873 DIODE T6 marking
Text: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV EW Features: Application:
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MIXA20W1200TMH
20091127a
G4EU
ic MARKING QG
E72873
DIODE T6 marking
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VUI72-16NOXT
Abstract: vui72-16 VUI72 215 dc brake rectifier motor VUI72-1 72-16NOXT vui three phase bridge ixys vui72-16no 9V bridge rectifier ic VUI72-16N
Text: VUI 72-16NOXT Three Phase Rectifier Bridge VRRM = 1600 V IdAVM = 110 A with Brake IGBT Part name Marking on product VUI72-16NOXT 6 11 D1 12 5 1 ˙NTC D3 D5 4 2 11 ~1 ~7 ~9 6 D2 7 5 12 9 10 D4 D6 T 2 4 E72873 10 Features: Application: Package: • Three phase mains rectifier
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72-16NOXT
VUI72-16NOXT
E72873
201on
20101119a
VUI72-16NOXT
vui72-16
VUI72
215 dc brake rectifier motor
VUI72-1
72-16NOXT
vui three phase bridge ixys
vui72-16no
9V bridge rectifier ic
VUI72-16N
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MIEB101W1200EH
Abstract: 101W1200EH
Text: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • SPT IGBT technology
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101W1200EH
MIEB101W1200EH
E72873
20110511a
MIEB101W1200EH
101W1200EH
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Untitled
Abstract: No abstract text available
Text: MWI75-12T8T Six-Pack Trench IGBT VCES = 1200 V IC25 = 110 A VCE sat = 1.7 V Part name (Marking on product) MWI75-12T8T 16, 17, 18 30, 31, 32 D1 D3 T1 9 10 6 2 27 28 29 NTC 24 25 26 D2 20 T5 5 1 19 3 D5 T3 D4 T2 4 21 22 23 E72873 Pin coniguration see outlines.
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MWI75-12T8T
E72873
20100910c
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Untitled
Abstract: No abstract text available
Text: MIXA100W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA100W1200TEH 16, 17, 18 30, 31, 32 D1 D3 T1 1 19 T5 9 10 6 2 27 28 29 NTC 24 25 26 D2 20 3 D5 T3 5 D4 T2 4 21 22 23 E72873 Pin coniguration see outlines.
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MIXA100W1200TEH
E72873
20110505a
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D6 TRANSISTOR MARKING
Abstract: No abstract text available
Text: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 D1 1 T1 D2 5 2 T2 D3 9 T3 10 6 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: + • SPT IGBT technology • low saturation voltage
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101W1200EH
MIEB101W1200EH
E72873
20110511a
D6 TRANSISTOR MARKING
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301 marking code PNP transistor
Abstract: Marking Y1 ROHM D3A transistor marking D3N marking code D3 SC-74
Text: UMD3N IMD3A Transistor, digitai, dual, NPN and PNP, with 2 resistors Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages UM D3N (UMT6) 2.0±Q,2 package marking: UMD3N and IMD3A; D3 1,3±0.1 I 0.65 package contains a PNP
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OCR Scan
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PDF
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SC-74)
DTA114EKA)
DTC114EKA)
SC-70)
SC-59)
301 marking code PNP transistor
Marking Y1 ROHM
D3A transistor
marking D3N
marking code D3 SC-74
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